Dual epitaxy region integration
A semiconductor device includes a first device region and second device region of opposite polarity. Each device region includes at least a transistor device and associated epitaxy. A high-k barrier is formed to overlay the first device region epitaxy only. The high-k barrier may include a substantially horizontal portion formed upon a top surface of the first device region epitaxy and a substantially vertical portion formed upon an outer surface of the first device region epitaxy. The substantially vertical portion may partially isolate the first device region from the second device region.
1. A semiconductor device comprising:
a first device region and second device region of opposite polarity, each device region comprising:
a transistor device and associated epitaxy;
a high-k barrier overlying the first device region epitaxy only, the high-k barrier comprising:
a substantially horizontal portion formed upon the first device region epitaxy, and;
a substantially vertical portion that at least partially isolates the first device region from the second device region.
2. The semiconductor device of claim 1 wherein each transistor device comprises:
a spacer that isolates a transistor gate stack from the associated epitaxy.
3. The semiconductor device of claim 1 wherein the thickness of the first device region spacer is substantially equal to the thickness of the second device region spacer.
4. The semiconductor device of claim 1 wherein a top surface of the first device region epitaxy is coplanar with a top surface of the second device region epitaxy.
5. The semiconductor device of claim 1 wherein the substantially vertical portion is formed upon a masking-remnant associated with masking the second device region from the formation of the first device region epitaxy.
6. A method of fabricating a semiconductor device comprising:
forming a first device region and second device region of opposite polarity, each device region comprising a transistor device and associated epitaxy, and;
forming a high-k barrier over the first device region epitaxy only by forming a horizontal high-k portion upon the first device region epitaxy and forming a substantially vertical high-k portion that at least partially isolates the first device region from the second device region.
7. The method of claim 6 wherein each transistor device comprises a spacer that isolates a transistor gate stack from the associated epitaxy.
8. The method of claim 6 wherein the thickness of the first device region spacer is substantially equal to the thickness of the second device region spacer.
9. The method of claim 6 wherein a top surface of the first device region epitaxy is coplanar with a top surface of the second device region epitaxy.
10. The method of claim 6 wherein forming the substantially vertical high-k portion further comprises:
forming the vertical high-k portion upon a masking-remnant associated with masking the second device region from the formation of the first device region epitaxy.
11. A method comprising:
providing a semiconductor substrate comprising a first device region and second device region of opposite polarity;
masking the first device region and the second device region;
selectively removing the mask only in the first device region;
forming an epitaxial layer upon the semiconductor substrate in the first device region, and;
forming a high-k barrier only over the first device region epitaxial layer by forming a horizontal high-k portion upon the first device region epitaxy and forming a substantially vertical high-k portion that at least partially isolates the first device region from the second device region.
12. The method of claim 11 further comprising:
selectively removing the mask in the second device region.
13. The method of claim 11 further comprising:
forming an epitaxial layer upon the semiconductor substrate in the second device region.
14. The method of claim 11 wherein selectively removing the mask only in the first device region forms first device region transistor device spacers.
15. The method of claim 11 wherein forming the substantially vertical high-k portion further comprises:
forming the vertical high-k portion upon a masking-remnant associated with masking the first device region and the second device region.
16. The method of claim 13 wherein a top surface of the first device region epitaxy is coplanar with a top surface of the second device region epitaxy.
17. The method of claim 12 wherein selectively removing the mask only in the second device region forms second device region transistor device spacers.