IP Library Granted Patent US 9,224,726
Granted Patent B2
US 9,224,726 · App. 12/991,824 · Granted Dec 29, 2015

Electrostatic discharge protection circuit, equipment and method

Inventors: Matthijs Pardoen (Pompetuzat, FR); Patrice Besse (Toulouse, FR)
Assignee: FREESCALE SEMICONDUCTOR, INC.
H01L27/0251Y10T29/49155
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Quick Facts
Patent No.
US 9,224,726
App. No.
12/991,824
Granted
Dec 29, 2015
Kind
B2
Abstract

An electrostatic discharge (ESD) protection circuit for protecting one or more devices in an electronic circuit from an ESD current which enters the electronic circuit through one or more input/output pins, the protection circuit comprising: a voltage clamp circuit connectable to the or each pin, for diverting the ESD current from the or each device; and a current sensor circuit connected between the input/output pins and the voltage clamp circuit and connected to the one or more devices, the current sensor circuit for sensing the ESD current and for switching off the or each device when the sensed current exceeds a threshold value, wherein when a current flows in the current mirror circuits above a threshold value the device is caused to switch off.

Claims (24)

1. An electrostatic discharge (ESD) protection circuit for protecting one or more devices in an electronic circuit from an ESD current which enters the electronic circuit through one or more input/output pins, the protection circuit comprising:

a voltage clamp circuit connectable to a pin, for diverting the ESD current from a device;

a current sensor circuit connected to the pin and the voltage clamp circuit and connected to the device, the current sensor circuit for sensing the ESD current and for switching off the device when the sensed current exceeds a threshold value.

2. The protection circuit of claim 1 , wherein said voltage clamp circuit includes at least one diode connecting said pin to a current sink, and wherein said current sensor circuit includes a current mirror for providing a mirror current or said ESD current.

3. The protection circuit of claim 1 , further comprising a device control circuit for switching off the device when the sensed current exceeds a threshold value.

4. The protection circuit of claim 1 , wherein the device control circuit further comprises a gate pull down circuit connected between the device and the current sensor circuits.

5. The protection of claim 4 , wherein the gate pull down circuit can also protect the device from a voltage surge when there is no ESD current.

6. The protection circuit of claim 4 , wherein the current sensor circuit has a ratio which determines the relative proportions of current in the voltage clamp circuit and the gate pull down circuit.

7. The protection circuit of claim 6 , wherein the ratio is associated with the threshold value.

8. The protection circuit of claim 1 , wherein the threshold value is dependent upon the type of device.

9. The protection circuit of claim 1 , wherein the current sensor circuit is the PNP current mirror.

10. The protection circuits of claim 1 , wherein the current sensor circuit comprises a bipolar transistor and a diode.

11. The protection circuit as claimed in claim 2 , wherein said diode includes first regions, a first layer of a first type of doping in between adjacent second layers of a second type of doping, opposite to said first type and wherein said current mirror includes a second region in said first layer provided with said second type of doping in between first regions of said first layer.

12. The protection circuit of claim 1 , wherein the device comprises an amplifier.

13. An integrated circuit including the device, the pin and the protection circuit as claimed in claim 1 .

14. Equipment including a protection circuit according to claim 1 .

15. A method of manufacturing a protection circuit for protecting one or more devices from an ESD current which enters the circuit through one or more input/output pins, the method comprising the steps of:

forming a voltage clamp circuit on a substrate connectable to a pin for diverting current from said device;

forming a current sensor circuit on the substrate such that the current sensor circuit is connected between the pin and the voltage clamp circuit and is connected to said device, the current sensor circuit for sensing the ESD current and for switching off the device when the sensed current exceeds a threshold value.

16. The protection circuit of claim 2 , further comprising a device control circuit for switching off the device when the sensed current exceeds a threshold value.

17. The protection circuit of claim 2 , wherein the device control circuit further comprises a gate pull down circuit connected between the device and the current sensor circuits.

18. The protection circuit of claim 5 , wherein the current sensor circuit has a ratio which determines the relative proportions of current in the voltage clamp circuit and the gate pull down circuit.

19. The protection circuit as claimed in claim 3 , wherein said diode includes first regions, a first layer of a first type of doping in between adjacent second layers of a second type of doping, opposite to said first type and wherein said current mirror includes a second region in said first layer provided with said second type of doping in between first regions of said first layer.

20. The protection circuit of claim 2 , wherein the device comprises an amplifier.

Assignments (22)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE LISTED CHANGE OF NAME SHOULD BE MERGER AND CHANGE PREVIOUSLY RECORDED AT REEL: 040652 FRAME: 0180. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Jan 12, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 041354/0148 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 040652/0180 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0387 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0285 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0334 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
SECURITY AGREEMENT Recorded Jan 31, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 027621/0928 →
SECURITY AGREEMENT Recorded Jan 31, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 027622/0477 →
SECURITY AGREEMENT Recorded Jan 31, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 027622/0075 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 9, 2010
From: PARDOEN, MATTHIJS; BESSE, PATRICE
To: FREESCALE SEMICONDUCTOR INC.
Reel/Frame 025335/0597 →
Continuity (1)
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