Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material
View Patent ↗A semiconductor processing composition and method for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate comprising copper, low-k dielectric material and TiN, TiNxOy or W wherein the composition includes water, at least one halide anion selected from Cl − or Br − , and, where the metal hard mask comprises only TiN or TiNxOy, optionally at least one hydroxide source.
1. A semiconductor processing composition which is effective for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate in the absence of a Cu corrosion inhibitor, wherein the substrate includes copper, low-k dielectric material and a hardmask selected from TiN or TiNxOy, the composition comprising water, at least one halide anion selected from NH 4 Br, at least one oxidizing agent, and a base for adjusting pH.
2. The composition of claim 1 further comprising an organic cosolvent that miscible with water.
3. A semiconductor processing composition which is effective for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate in the absence of a Cu corrosion inhibitor, wherein the substrate includes copper, low-k dielectric material and a metal hardmask which is W, the composition comprising water, at least one halide anion selected from NH 4 Br, at least one oxidizing agent, and a base for adjusting pH.
4. The composition of claim 1 further comprising an organic cosolvent that is miscible with water.
5. The semiconductor processing composition of claim 1 wherein the oxidizing agent is selected from the group consisting of hydrogen peroxide, ozone, ferric chloride, permanganate, peroxoborate, perchlorate, persulfate, ammonium peroxydisulfate, peracetic acid, urea hydroperoxide, percarbonate, perborate, and mixtures thereof.
6. The semiconductor processing composition of claim 3 wherein the oxidizing agent is selected from the group consisting of hydrogen peroxide, ozone, ferric chloride, permanganate, peroxoborate, perchlorate, persulfate, ammonium peroxydisulfate, peracetic acid, urea hydroperoxide, percarbonate, perborate, and mixtures thereof.