Methods for removing selected fins that are formed for finFET semiconductor devices
One illustrative method disclosed herein includes, among other things, forming a plurality of trenches in a semiconductor substrate to thereby define a plurality of fins in the substrate, forming a layer of insulating material in the trenches, performing an etching process sequence to remove at least a portion of one of the plurality of fins and thereby define a fin cavity, wherein the etching process sequence includes performing a first anisotropic etching process and, after performing the first anisotropic etching process, performing a second isotropic etching process. In this embodiment, the method concludes with the step of forming additional insulating material in the fin cavity.
1. A method, comprising:
forming a plurality of trenches in a semiconductor substrate to thereby define a plurality of fins in said substrate;
forming a layer of insulating material in said plurality of trenches;
forming a fin removal mask layer above said plurality of fins;
after forming said fin removal mask layer, performing an etching process sequence to remove at least a portion of one of said plurality of fins and thereby define a fin cavity, wherein said etching process sequence comprises:
performing a first anisotropic etching process; and
after performing said first anisotropic etching process, performing a second isotropic etching process, wherein at least said first anisotropic etching process is performed through said fin removal mask layer; and
forming additional insulating material in said fin cavity.
2. The method of claim 1 , further comprising performing both said first anisotropic etching process and said second isotropic etching process through said fin removal mask layer.
3. The method of claim 1 , further comprising recessing said layer of insulating material and said additional insulating material to thereby expose a desired height of at least some of said plurality of fins.
4. A method, comprising:
forming a plurality of trenches in a semiconductor substrate to thereby define a plurality of fins in said substrate, said plurality of trenches having a first depth;
forming a layer of insulating material in said plurality of trenches;
performing a first anisotropic etching process to remove at least a portion of one of said plurality of fins and thereby define an initial fin cavity having a second depth that is greater than said first depth and a bottom width;
after performing said first anisotropic etching process, performing a second isotropic etching process to define a final fin cavity, wherein said final fin cavity has a third depth that is greater than said second depth and a second width at a bottom of said final fin cavity that is greater than said bottom width; and
forming additional insulating material in said final fin cavity.
5. The method of claim 4 , wherein, prior to said performing said etching process sequence, the method further comprises forming a fin removal mask layer above said plurality of fins.
6. The method of claim 5 , further comprising performing at least said first anisotropic etching process through said fin removal mask layer.
7. A method, comprising:
forming a plurality of fin-formation trenches in a semiconductor substrate to thereby define a plurality of fins in said substrate;
performing a fin-cut etching process to form a plurality of fin-cut trenches;
forming a layer of insulating material in said fin-formation trenches and in said fin-cut trenches;
performing a fin removal etching process sequence to remove at least a portion of one of said plurality of fins and thereby define a fin cavity, wherein said final removal etching process sequence comprises:
performing a first anisotropic etching process; and
after performing said first anisotropic etching process, performing a second isotropic etching process;
forming additional insulating material in said fin cavity; and
recessing said layer of insulating material and said additional insulating material to thereby expose a desired height of at least some of said plurality of fins.
8. The method of claim 7 , wherein, prior to said performing said fin removal etching process sequence, the method further comprises forming a fin removal mask layer above said plurality of fins.
9. The method of claim 8 , further comprising performing at least said first anisotropic etching process through said fin removal mask layer.
10. The method of claim 8 , further comprising performing both said first anisotropic etching process and said second isotropic etching process through said fin removal mask layer.
11. An integrated circuit device, comprising:
a plurality of fin-formation trenches defined in a semiconductor substrate that define a plurality of fins having a long axis, said fin-formation trenches having a first width at a bottom of said fin-formation trenches;
a fin removal trench formed in said substrate between two of said plurality of fins, said fin removal trench having a long axis that is substantially parallel to said long axis of said plurality of fins, wherein a bottom of said fin removal trench has a maximum width that is greater than said first width; and
an insulating material positioned in said fin-formation trenches and in said fin removal trench, wherein a portion of said fin removal trench is positioned laterally under a portion of said insulating material.
12. The device of claim 11 , wherein said fin-formation trenches have a first depth and wherein said fin removal trench has a second depth at a mid-width location of said fin removal trench that is greater than said first depth.
13. The device of claim 11 , wherein said fin-formation trenches have a substantially planar bottom surface and said fin removal trench has a rounded bottom surface and rounded sidewalls.
14. An integrated circuit device, comprising:
a plurality of fin-formation trenches defined in a semiconductor substrate that define a plurality of fins having a long axis, said fin-formation trenches having a first depth;
a fin removal trench formed in said substrate between two of said plurality of fins, said fin removal trench having a long axis that is substantially parallel to said long axis of said plurality of fins, wherein a bottom of said fin removal trench has a stepped configuration when viewed in a cross-section taken along said long axis of said fin removal trench with opposing ends of said fin removal trench having a depth that is equal to said first depth and a region between said opposing ends having a second depth at a mid-point of said region that is greater than said first depth; and
an insulating material positioned in said fin-formation trenches and in said fin removal trench, wherein, when viewed in a cross-section taken through said fin removal trench in a direction transverse to said long axis of said fin removal trench, a portion of said fin removal trench is positioned laterally under a portion of said insulating material.
15. The device of claim 14 , wherein a bottom of said fin-formation trenches and said opposing ends of said fin removal trench are substantially planar surfaces and said region of said fin removal trench between said opposing ends has a rounded bottom surface.
16. A method, comprising:
forming a plurality of trenches in a semiconductor substrate to thereby define a plurality of fins in said substrate;
forming a layer of insulating material in said plurality of trenches;
performing an etching process sequence to remove at least a portion of one of said plurality of fins and thereby define a fin cavity, wherein said etching process sequence comprises:
performing a first anisotropic etching process; and
after performing said first anisotropic etching process, performing a second isotropic etching process;
forming additional insulating material in said fin cavity; and
recessing said layer of insulating material and said additional insulating material to thereby expose a desired height of at least some of said plurality of fins.