Integrated multiple gate length semiconductor device including self-aligned contacts
A multi-channel semiconductor device includes a first and second gate channels formed in a semiconductor substrate. The first gate channel has a first length and the second gate channel has a second length greater than the first length. A gate dielectric layer is formed in the first and second gate channels. A first plurality of work function metal layers is formed on the gate dielectric layer of the first gate channel. A second plurality of work function metal layers is formed on the gate dielectric layer of the second gate channel. A barrier layer is formed on each of the first and second plurality of work function metal layers, and the gate dielectric layer. The multi-channel semiconductor device further includes metal gate stacks formed on of the barrier layer such that the barrier layer is interposed between the metal gate stacks and the gate dielectric layer.
1. A method of fabricating a multi-gate semiconductor device, the method comprising:
forming a first gate void in a semiconductor substrate and a second gate void in the semiconductor substrate, the first gate void having a first length and the second gate void a second length greater than the first length;
forming a gate dielectric layer in the first and second gate voids;
forming a first plurality of work function metal layers on the gate dielectric layer of the first gate void and forming a second plurality of work function metal layers on the gate dielectric layer of the second gate void, the second plurality of work function metal layers including a portion of the first plurality of work function metal layers such that the second plurality of work function metal layers has a greater number of layers than the first plurality of work function metal layers;
etching the first plurality of work function metal layers to form a first gate cavity and etching the second plurality of work function metal layers to form a second gate cavity;
forming a barrier layer in the first and second gate cavities; and
forming metal gate stacks in the first and second cavities and on an exposed surface of the barrier layer,
wherein the forming the second plurality of work function metal layers on the gate dielectric layer of the second gate void comprises:
forming a first work function metal layer directly on the gate dielectric layer;
forming a second work function metal layer on the first work function metal layer;
forming a third work function metal layer on the second work function metal layer; and
forming a fourth work function metal layer on the third work function metal layer.
2. The method of claim 1 , wherein the etching of the first plurality of work function metal layers and the second plurality of work function metal layers includes selectively etching the first and second plurality of work function metal layers with respect to an oxide material.
3. The method of claim 2 , wherein the etching of the first plurality of work function metal layers and the second plurality of work function metal layers is performed simultaneously.
4. The method of claim 3 , wherein the barrier layer is formed on etched portions of the first plurality of work function metal layers and the second plurality of work function metal layers.
5. The method of claim 4 , wherein the barrier layer is interposed between the metal gate stacks and the gate dielectric layer.
6. The method of claim 5 , wherein the forming a first plurality of work function metal layers on the gate dielectric layer of the first gate void comprises:
forming the second work function metal layer directly on the gate dielectric layer;
forming the third work function metal layer on the second work function metal layer; and
forming the fourth work function metal layer on the third work function metal layer.
7. The method of 6 , wherein the second work function metal layer is formed from a metal nitride material and the third work function metal layer is formed from a metal carbide material.
8. The method of claim 7 , wherein the first work function metal layer is formed from titanium nitride (TiN), the second work function metal layer is formed from titanium nitride (TiN), the third work function metal layer is formed from tantalum carbide (TaC), and the fourth work function metal layer is formed from titanium nitride (TiN).
9. The method of claim 8 , wherein a thickness of the second work function metal layer formed in the first gate void is less than a combined thickness of the first work function metal layer and the second work function metal layer formed in the second gate void.
10. The method of claim 9 , wherein the metal gate stacks are formed from tungsten (W).
11. The method of claim 10 , further comprising forming an n-type field effect transistor (NFET) including the metal gate stack formed in the first gate void and forming a p-type field effect transistor (PFET) including the metal gate stack formed in the second gate void.
12. The method of claim 10 , further comprising forming a p-type field effect transistor (PFET) including the metal gate stack formed in the first gate void and forming an n-type field effect transistor (NFET) including the metal gate stack formed in the second gate void.
13. The method of claim 1 , wherein forming the second plurality of work function metal layers comprises:
prior to forming the second work function metal layer, selectively etching a first section of the first work function metal layer formed on the gate dielectric layer of the first gate void and with respect to a second section of the first work function metal layer formed on the gate dielectric layer of the second gate void.
14. The method of claim 13 , further comprising depositing the second work function metal layer such that a first portion is deposited directly on an upper surface of the remaining first work function metal layer while a second portion is deposited directly on the gate dielectric layer of the first gate void.