IP Library › Granted Patent US 9,396,999
Granted Patent B2
US 9,396,999 · App. 14/321,261 · Granted Jul 19, 2016

Wafer level packaging method

Inventors: Weng F. Yap (Chandler, AZ); Michael B. Vincent (Chandler, AZ)
Assignee: Freescale Semiconductor, Inc.
H01L21/78H01L21/561H01L23/13H01L23/3128H01L23/5383H01L23/5384H01L23/5389H01L24/19H01L24/96H01L25/065H01L23/147H01L23/49816H01L23/49822H01L23/49827H01L2224/18
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Quick Facts
Patent No.
US 9,396,999
App. No.
14/321,261
Granted
Jul 19, 2016
Kind
B2
Abstract

A wafer level packaging method entails providing electronic devices and providing a platform structure having cavities extending through the platform structure. The platform structure is mounted to a temporary support. One or more electronic devices are placed in the cavities with an active side of each electronic device facing the temporary support. The platform structure and the electronic devices are encapsulated in an encapsulation material to produce a panel assembly. Redistribution layers may be formed over the panel assembly, after which the panel assembly may be separated into a plurality of integrated electronic packages. The platform structure may be formed from a semiconductor material, and platform segments within each package provide a fan-out region for conductive interconnects, as well as provide a platform for a metallization layer and/or for forming through silicon vias.

Claims (49)

1. A method comprising:

providing a platform structure having a plurality of cavities extending through a thickness of said platform structure, said cavities being sized to accept electronic devices, wherein said platform structure comprises a semiconductor material;

mounting said platform structure to a temporary support;

placing said electronic devices in said cavities of said platform structure;

encapsulating said platform structure and said electronic devices in an encapsulation material to produce a panel assembly containing said electronic devices and said platform structure, wherein following said encapsulating, said method further comprises:

removing said panel assembly from said temporary support to expose an active side of each of said electronic devices at which electrical contacts are located;

applying at least one insulating layer over said active side of said each of said electronic devices;

forming openings in said at least one insulating layer to expose at least some of said electrical contacts on said active side of said each of said electronic devices;

providing conductive interconnects over said at least one insulating layer and extending through at least some of said openings in said at least one insulating layer;

separating said panel assembly into a plurality of integrated electronic packages following said providing said conductive interconnects, wherein for each of said integrated electronic packages, said separating exposes one of said conductive interconnects at a side wall of said each integrated electronic package; and

for said each of said integrated electronic packages, forming a conductive trace extending along said side wall, said conductive trace being in electrical communication with said one of said conductive interconnects.

2. The method of claim 1 wherein said providing comprises providing said platform structure with said cavities having a curvilinear shape.

3. The method of claim 1 wherein said providing comprises forming said platform structure from said semiconductor material having a first coefficient of thermal expansion (CTE) that is less than a second CTE of said encapsulation material.

4. The method of claim 1 wherein said providing comprises forming said platform structure from a material having a particle size of no greater than five microns.

5. The method of claim 1 wherein:

said placing comprises placing said electronic devices in said cavities so that gaps are located between device edges of said electronic devices and cavity edges of said cavities in said platform structure; and

said encapsulating comprises providing said encapsulation material in said gaps.

6. The method of claim 1 wherein:

said mounting comprises mounting said platform structure with a first surface of said platform structure facing said temporary support; and

said method further comprises exposing a second surface of said platform structure from said encapsulation material, said second surface opposing said first surface.

7. The method of claim 1 further comprising forming conductive vias extending through said platform structure.

8. The method of claim 1 wherein said integrated electronic packages are first integrated electronic packages and for each of said first integrated electronic packages, said method further comprises:

coupling a second integrated electronic package to one of a top exterior surface and a bottom exterior surface of said first integrated electronic package; and

electrically interconnecting said conductive trace extending along said side wall of said first integrated electronic package with a second electronic device of said second integrated electronic package.

9. The method of claim 1 wherein said separating occurs through said platform structure so that a portion of said platform structure is exposed at said side wall of each of said integrated electronic packages.

10. A method comprising:

providing a platform structure having a plurality of cavities extending through a thickness of said platform structure, said cavities being sized to accept electronic devices, wherein said platform structure comprises a semiconductor material;

forming conductive vias extending through said platform structure;

mounting said platform structure to a temporary support;

placing said electronic devices in said cavities of said platform structure;

encapsulating said platform structure and said electronic devices in an encapsulation material to produce a panel assembly containing said electronic devices, said platform structure, and said conductive vias; and

separating said panel assembly into a plurality of integrated electronic packages following said encapsulating, said separating occurring through said platform structure so that a portion of said platform structure is exposed at opposing side walls of each of said integrated electronic packages, wherein prior to said separating, said method further comprises:

removing said panel assembly from said temporary support to expose an active side of each of said electronic devices at which electrical contacts are located;

applying at least one insulating layer over said active side of said each of said electronic devices and over a non-cavity area of said platform structure surrounding said active side of said each of said electronic devices;

forming openings in said at least one insulating layer to expose at least some of said electrical contacts on said active side of said each of said electronic devices;

forming said openings in said at least one insulating layer overlying said non-cavity area of said platform structure; and

providing conductive interconnects over said at least one insulating layer and extending through at least some of said openings in said at least one insulating layer.

11. A method comprising:

providing a platform structure having a plurality of cavities extending through a thickness of said platform structure, said cavities being sized to accept electronic devices, wherein said platform structure comprises a semiconductor material;

forming conductive vias extending through said platform structure;

mounting said platform structure to a temporary support;

placing said electronic devices in said cavities of said platform structure;

encapsulating said platform structure and said electronic devices in an encapsulation material to produce a panel assembly containing said electronic devices, said platform structure, and said conductive vias, wherein following said encapsulating, said method further comprises:

removing said panel assembly from said temporary support to expose an active side of each of said electronic devices at which electrical contacts are located;

applying at least one insulating layer over said active side of said each of said electronic devices;

forming openings in said at least one insulating layer to expose at least some of said electrical contacts on said active side of said each of said electronic devices; and

providing conductive interconnects over said at least one insulating layer and extending through at least some of said openings in said at least one insulating layers;

separating said panel assembly into a plurality of integrated electronic packages following said encapsulating, said separating occurring through said platform structure so that a portion of said platform structure is exposed at opposing side walls of each of said integrated electronic packages, wherein following said providing said conductive interconnects, said separating exposes one of said conductive interconnects at a side wall of said each integrated electronic package; and

for said each of said integrated electronic packages, forming a conductive trace extending over said portion of said platform structure at said side wall, said conductive trace being in electrical communication with said one of said conductive interconnects.

Assignments (15)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040632 FRAME: 0001. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Sep 21, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 044209/0047 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040632/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 7, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037458/0460 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 7, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037458/0502 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0921 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Nov 4, 2014
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 034160/0370 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Nov 4, 2014
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 034160/0351 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Nov 4, 2014
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 034153/0027 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 1, 2014
From: YAP, WENG F.; VINCENT, MICHAEL B.
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 033224/0278 →
Continuity (1)
Related Publication 20160005628A1 · Jan 7, 2016