Planarization method, method for polishing wafer, and CMP system

1. A planarization method comprising:

providing a wafer, wherein the wafer comprises a work function layer, a surface layer formed on the work function layer and oxidized from the work function layer, and a planarization layer disposed on or above the surface layer;

performing a chemical-mechanical planarization (CMP) process on the planarization layer;

providing an incident light to a surface of the wafer under the CMP process;

detecting absorption of the incident light by the surface layer; and

stopping the CMP process in response to an increase in the detected absorption of the incident light.

2. The planarization method of claim 1 , wherein the photon energy of the incident light is greater than the band gap energy of the surface layer.

3. The planarization method of claim 1 , wherein the photon energy of the incident light is greater than approximately 5.2×10−19 joules.

4. The planarization method of claim 1 , wherein the detecting comprises:

detecting photoluminescence emitted by the surface layer due to the absorption of the incident light.

5. The planarization method of claim 1 , wherein a photon energy detection range of the detecting encompasses the band gap energy of the surface layer.

6. The planarization method of claim 1 , wherein the detecting comprises:

detecting the reflected incident light from the surface layer after the absorption of the incident light.

7. The planarization method of claim 1 , wherein the work function layer is made of titanium nitride or silicon nitride.

8. The planarization method of claim 1 , wherein the surface layer is made of titanium oxide, titanium oxynitride, or amorphous silicon oxide.

9. A method for polishing a wafer, the method comprising:

holding a wafer against a pad;

rotating at least one of the wafer and the pad;

providing an incident light to an end-point layer on the wafer, wherein the photon energy of the incident light is greater than the band gap energy of the end-point layer;

detecting absorption of the incident light by the end-point layer; and

stopping the rotation of at least one of the wafer and the pad in response to an increase in the detected absorption of the incident light.

10. The method of claim 9 , wherein the photon energy of the incident light is greater than approximately 5.2×10−19 joules.

11. The method of claim 9 , wherein the detecting comprises:

detecting photoluminescence emitted by the end-point layer due to the absorption of the incident light.

12. The method of claim 9 , wherein the detecting comprises:

detecting the reflected incident light from the end-point layer after the absorption of the incident light.

13. The planarization method of claim 1 , wherein the incident light is a laser light.

14. The planarization method of claim 4 , wherein the photoluminescence is detected by an ultraviolet light detector.

15. The planarization method of claim 4 , wherein a photon energy detection range of the detecting is from about 2.8×10−19 joules to about 6.6×10−19 joules.

16. The planarization method of claim 6 , wherein the reflected incident light is detected by a Raman scattering spectrum detector.

17. The planarization method of claim 16 , wherein a wavenumber range of the Raman scattering spectrum detector is from about 800 centimeter −1 to about 2000 centimeter −1 .

18. The method of claim 9 , wherein a photon energy detection range of the detecting encompasses the band gap energy of the end-point layer.

19. The method of claim 9 , wherein the end-point layer is made of titanium oxide, titanium oxynitride, or amorphous silicon oxide.

20. The method of claim 9 , wherein the incident light is a laser light.