Gallium nitride hemt device with a mosfet in series coupled to diodes for protection of high-voltage
View Patent ↗A semiconductor device having high breakdown withstand voltage includes a first element which is a normally-on type transistor made of nitride compound semiconductor, a second element which is connected to the first element in series and is a transistor having withstand voltage between a source and a drain lower than withstand voltage of the first element, a first diode which is connected between a gate of the first element or a gate of the second element and a drain of the first element so that a cathode of the first diode is connected at the drain's side and has predetermined avalanche withstand voltage, and a first resistance connected to the gate to which the first diode is connected. The avalanche withstand voltage of the first diode is lower than breakdown voltage of the first element.
1. A semiconductor device, comprising:
a first element which is a normally-on type transistor made of nitride-based compound semiconductor, the first element being a gallium nitride-high electron mobility transistor (GaN-HEMT) or a junction field effect transistor (FET);
a second element connected to the first element in series and being a transistor having withstand voltage between a source and a drain which is lower than withstand voltage of the first element;
a first diode connected between a gate of the first element or a gate of the second element and a drain of the first element so that a cathode of the first diode is connected at the drain's side, an anode of the first diode is directly connected to the gate of the first element, and the first diode having predetermined avalanche withstand voltage;
a first resistance connected to the gate to which the first diode is connected, wherein the avalanche withstand voltage of the first diode is lower than breakdown voltage of the first element, the first diode is connected to the gate of the first element, and the first resistance is connected to the gate of the first element and the source of the second element; and
a protection diode, a cathode of the protection diode being connected to a source of the first element and the drain of the second element, and an anode of the protection diode being connected to the first resistance and directly connected to the anode of the first diode.
2. The semiconductor device according to claim 1 , wherein the avalanche withstand voltage of the first diode is lower than collapse-increasing voltage of the first element.
3. The semiconductor device according to claim 1 , wherein the first diode is formed in monolithic manner on a chip including the first element.