Leadframe feature to minimize flip-chip semiconductor die collapse during flip-chip reflow
A support feature on a leadframe to support a semiconductor die during placement of the die on the leadframe and minimize the collapsing effect of the connector bumps of the die after reflowing. In some embodiments, the support features are formed from material that is different from the leadframe, such as by a ball drop process or a plating process. In some embodiments, the support features are formed from the leadframe material, such as by etching. In some embodiments, the support features are covered with a coating material.
1. A leadframe device comprising:
a leadframe having a top surface;
a plurality of support features disposed on the top surface of the leadframe, wherein the plurality of support features comprise a material different from the leadframe and are configured to support a flip-chip semiconductor die, the plurality of the support features are also configured as bump balls reflowed to the top surface of the leadframe;
the flip-chip semiconductor die comprising a plurality of connector bumps coupled to the top surface of the leadframe, the plurality of connector bumps each disposed inline between a bottom surface of the semiconductor die and the top surface of the leadframe wherein each of the plurality of support features has a height less than a height of each of the plurality of connector bumps, and each of the plurality of connector bumps comprises a material that melts during a reflow process and each of the plurality of support features comprises a different material than the plurality of connector bumps and that maintains a specific height during the reflow process in a case of improper collapse of one or more connector bumps, wherein the material of each of the plurality of support features has a higher liquidus temperature than the material of the connector bumps; and
a coating material covering at least a portion of the top of each support feature, but not the bottom of each support feature, wherein the coating material is a plating material, and wherein the plating material is selected from the grow consisting of: silver, nickel, palladium, and gold.
2. The device of claim 1 , wherein the plurality of support features comprise epoxy.
3. The device of claim 1 , wherein the plurality of support features comprise at least one material from the group of materials consisting of: silver, nickel, palladium, and gold.
4. The device of claim 1 , wherein the support features are substantially ball-shaped.
5. The device of claim 1 , wherein the support features are each found in the shape of an elongated bar.
6. The device of claim 1 , wherein the plurality of connector bumps comprise a material different from the plurality of support features.
7. A leadframe device comprising:
a leadframe comprising leadframe material and having a top surface;
a semiconductor die coupled to the leadframe, wherein the semiconductor die comprises a plurality of connector bumps each positioned against the top surface of the leadframe the plurality of connector bumps each disposed inline between a bottom surface of the semiconductor die and the top surface of the leadframe; and
a plurality of support features extending from the top surface of the leadframe, wherein the support structures are formed from the leadframe and are configured to maintain a stand-off height daring a reflow process of the connector bumps in the case of has a top surface separated by the stand-off height from the top surface of the leadframe, a coating material covering at least a portion of the top of each support feature, but not the bottom of each support feature, wherein the coating material is a plating material, and wherein the plating material is selected from the group consisting of: silver, nickel, palladium, and gold.
8. The device of claim 7 , wherein the plurality of support features are substantially ball-shaped.
9. The device of claim 7 , wherein the plurality of support features are each formed in the shape of an elongated bar.
10. The device of claim 7 , wherein the plurality of connector bumps comprise a material different from the leadframe.
11. The device of claim 7 , wherein the stand-off height is a distance between a first surface of the semiconductor die and the top surface of the leadframe, further wherein the plurality of connector bumps are coupled to the first surface of the semiconductor die.
12. A leadframe device comprising:
a leadframe having a substantially planar top surface;
a semiconductor die coupled to the leadframe, wherein the semiconductor die is coupled to the top surface of the leadframe via a plurality of connector bumps each disposed inline between a bottom surface of the semiconductor die and the top surface of the leadframe; and
a plurality of support features disposed on the top surface of the leadframe, wherein the plurality of support features comprise a material different from the leadframe, are configured to support the semiconductor die and are configured as bumps plated to the top surface of the leadframe, wherein each of the plurality of connector bumps comprises a material that melts during a reflow process and each of the plurality of support structures comprises a different material than the plurality of connector bumps and that maintains a specific height during the reflow process in the case of improper collapse of one or more connector bumps, a coating material covering at least a portion of the top of each support feature, but not the bottom of each support feature, wherein the coating material is a plating material, and wherein the plating material is selected from the group consisting of: silver, nickel, palladium, and gold.
13. The device of claim 11 , wherein in the case of improper collapse of one or more connector bumps one or more of the support features contact the first surface of the semiconductor die.