Power semiconductor package
A semiconductor package that includes a substrate having a metallic back plate, an insulation body and a plurality of conductive pads on the insulation body, and a semiconductor die coupled to said conductive pads, the conductive pads including regions readied for direct connection to pads external to the package using a conductive adhesive.
1. A power semiconductor package comprising:
a semiconductor die that includes a first electrode;
a support plate;
an insulation body disposed over said support plate;
conductive pads on said insulation body, a first one of said conductive pads including a first region coupled to said first electrode and a second region readied for connection to a first external conductive pad;
wherein said insulation body electrically insulates said conductive pads from said support plate.
2. The power semiconductor package of claim 1 , wherein said semiconductor die includes a second electrode lateral to said first electrode, a second one of said conductive pads including a first region coupled to said second electrode and a second region readied for connection to a second external conductive pad.
3. The power semiconductor package of claim 2 , further comprising a conductive clip coupled to a third one of said conductive pads, said third conductive pad including a first region coupled to said conductive clip and a second region readied for connection to a third external conductive pad.
4. The power semiconductor package of claim 1 , wherein said semiconductor die includes a third electrode.
5. The power semiconductor package of claim 4 , wherein said third electrode is readied for connection to a third external conductive pad.
6. The power semiconductor package of claim 4 , further comprising a conductive clip coupled to said third electrode.
7. The power semiconductor package of claim 1 , wherein said conductive pads extend beyond peripheral edges of said insulation body.
8. The power semiconductor package of claim 1 , wherein said conductive pads are confined within peripheral edges of said insulation body.
9. The power semiconductor package of claim 1 , wherein said semiconductor die is an IC.
10. The power semiconductor package of claim 1 , wherein said support plate is metallic.
11. A power semiconductor package comprising:
a semiconductor die that includes a first electrode and a second electrode:
a support plate;
an insulation body disposed over said support plate;
conductive pads on said insulation body, wherein said insulation body electrically insulates said conductive pads from said support plate;
a first one of said conductive pads including a first region coupled to said first electrode and a second region readied for connection to a first external conductive pad;
a second one of said conductive pads including a first region coupled to said second electrode and a second region readied for connection to a second external conductive pad;
a conductive clip coupled to a third one of said conductive pads.
12. The power semiconductor package of claim 11 , wherein said third conductive pad includes a first region coupled to said conductive clip and a second region readied for connection to a third external conductive pad.
13. The power semiconductor package of claim 11 , wherein said conductive pads extend beyond peripheral edges of said insulation body.
14. The power semiconductor package of claim 11 , wherein said conductive pads are confined within peripheral edges of said insulation body.
15. The power semiconductor package of claim 11 , wherein said semiconductor die is an IC.
16. The power semiconductor package of claim 11 , wherein said support plate is metallic.