Acid generators and photoresists comprising same
Acid generator compounds are provided that are particularly useful as photoresist composition components. Preferred acid generators include cyclic sulfonium compounds that comprise a covalently linked acid-labile group.
1. A method for providing a photoresist relief image, comprising:
a) applying a coating layer of a photoresist composition on a substrate, the photoresist composition comprising:
(a) a polymer; and
(b) an acid generator selected from the group consisting of:
(i) 5-(4-(2-(1-ethylcyclopentyloxy)-2-oxoethoxy)-3,5-dimethylphenyl)-5H-dibenzo[b,d]thiophenium 3-hydroxyadamantane-acetoxy-1,1,2,2-tetrafluorobutane-1-sulfonate;
(ii) 5-(3,5-dimethyl-4-(2-oxo-2-(2-phenylpropan-2-yloxy)ethoxy)phenyl)-5H-dibenzo[b,d]thiophenium 3-hydroxyadamantane-acetoxy-1,1,2,2-tetrafluorobutane-1-sulfonate;
(iii) 5-(4-(2-(1-ethylcyclopentyl oxy)-2-oxoethoxy)-3,5-dimethylphenyl)-5H-dibenzo[b,d]thiophenium 4-((4R)-4-((8R,9S,10S,13R,14S,17R)-10,13-dimethyl-3,7,12-trioxohexadecahydro-1H-cyclopenta[a]phenanthren-17-yl)pentanoyloxy)-1,1,2,2-tetrafluorobutane-1-sulfonate; and
(iv) 5-(3,5-dimethyl-4-(2-oxo-2-(2-phenylpropan-2-yloxy)ethoxy)phenyl)-5H-dibenzo[b,d]thiophenium 44(4R)-44(8R,9S,10S,13R,14S,17R)-10,13-dimethyl-3,7,12-trioxohexadecahydro-1H-cyclopenta[a]phenanthren-17-ylipentanoyloxy)-1, 1,2,2-tetrafluorobutane-1-sulfonate; and
b) exposing the photoresist composition layer to activating radiation and developing the exposed photoresist composition coating layer.
2. The method of claim 1 wherein the photoresist composition layer is exposed to EUV radiation.
3. The method of claim 1 wherein the photoresist composition layer is exposed to e beam radiation.
4. An acid generator that comprises a cation component selected from:
5. A photoresist composition comprising:
(a) a polymer; and
(b) an acid generator of claim 4 .
6. A method for providing a photoresist relief image, comprising:
a) applying a coating layer of a photoresist composition of claim 5 on a substrate; and
b) exposing the photoresist composition layer to activating radiation and developing the exposed photoresist composition coating layer.
7. The method of claim 6 wherein the photoresist composition layer is exposed to EUV radiation.
8. The method of claim 6 wherein the photoresist composition layer is exposed to e beam radiation.