Mixed N/P-type fin semiconductor structure with epitaxial materials having increased surface area through multiple epitaxial heads
A non-planar semiconductor structure includes mixed n-and-p type raised semiconductor structures, e.g., fins, having epitaxial structures grown on top surfaces thereof, for example, epitaxial silicon and silicon germanium, naturally growing into a diamond shape. The surface area of the epitaxial structures is increased by removing portion(s) thereof, masking each type as the other type is grown and then subsequently modified by the removal. The removal may create multi-head (e.g., dual-head) epitaxial structures, together with the neck of the respective raised structure resembling a Y-shape.
1. A semiconductor structure, comprising:
a semiconductor substrate;
at least one first raised semiconductor structure coupled to the substrate, wherein the first raised structure is one of N type and P type;
at least one second raised semiconductor structure coupled to the substrate, wherein the second raised structure is the other of N type and P type;
at least one first epitaxial structure of a first epitaxial material coupled to the at least one first raised semiconductor structure, wherein the at least one first epitaxial structure comprises at least two first epitaxial head structures joined at a bottom portion thereof, wherein a portion of the at least one first epitaxial structure is absent and creates a single concave depression, such that a surface area of the at least one first epitaxial structure is larger than that of an original epitaxial structure, a shape thereof obtained by extending top surfaces of the at least two first epitaxial head structures toward each other; and
at least one second epitaxial structure of a second epitaxial material coupled to the at least one second raised semiconductor structure, wherein the at least one second epitaxial structure comprises at least two second epitaxial head structures joined at a bottom portion thereof, wherein a portion of the at least one second epitaxial structure is absent and creates a single concave depression, such that a surface area of the at least one second epitaxial structure is larger than that of an original epitaxial structure, a shape thereof obtained by extending top surfaces of the at least two second epitaxial head structures toward each other.
2. The semiconductor structure of claim 1 , wherein the at least one first raised semiconductor structure is N type, and wherein the first epitaxial material comprises one of epitaxial silicon and epitaxial indium gallium arsenide.
3. The semiconductor structure of claim 1 , wherein the at least one second raised semiconductor structure is P type, and wherein the second epitaxial material comprises one of epitaxial germanium, epitaxial silicon germanium and epitaxial silicon.
4. The semiconductor structure of claim 1 , wherein the first epitaxial material comprises a combination of at least two materials from Groups III-V of the Periodic Table of Elements.
5. The semiconductor structure of claim 1 , wherein the second epitaxial material comprises a combination of at least two materials from Groups III-V of the Periodic Table of Elements.
6. The semiconductor structure of claim 1 , wherein a distance between tips of bodies of adjacent raised semiconductor structures of a same type is between about 20 nm and about 100 nm.
7. The semiconductor structure of claim 1 , wherein the absent portion creates a V-shaped depression.
8. The semiconductor structure of claim 7 , wherein a surface area of the at least two first epitaxial head structures corresponding to the V-shaped opening is greater than a surface area of extensions of top surfaces of the at least two first epitaxial head structures.
9. The semiconductor structure of claim 7 , wherein a surface area of the at least two second epitaxial head structures corresponding to the V-shaped opening is greater than a surface area of extensions of top surfaces of the at least two second epitaxial head structures.