Metal wires of a stacked inductor
A method including forming a first metal wire in a first dielectric layer, the first metal wire including a first vertical side opposite from a second vertical side; and forming a second metal wire in a second dielectric layer above the first dielectric layer, the second metal wire including a third vertical side opposite from a fourth vertical side, where the first vertical side is laterally offset from the third vertical side by a first predetermined distance, and the second vertical side is laterally offset from the fourth vertical side by a second predetermined distance, where the first metal wire and the second metal wire are in direct contact with one another.
1. A method of forming an inductor, the method comprising:
forming a first metal wire of the inductor in a first trench in a first dielectric layer of a first inductor level, the first metal wire having a first vertical side and a second vertical side opposite the first vertical side and the first metal wire further having a first width as measured from the first vertical side to the second vertical side, the first metal wire being electrically connected to a lower wire in a lower wiring level through a via, the lower wire of the lower wiring level and the first metal wire of the first inductor level having approximately equal widths and being wider than the via;
forming a second dielectric layer of a second inductor level above the first metal wire and the first dielectric layer;
forming a second trench that extends vertically through the second dielectric layer and that is partially offset from the first metal wire; and
forming a second metal wire of the inductor in the second trench,
the second metal wire being thicker than the first metal wire,
the second metal wire having a third vertical side and a fourth vertical side opposite the third vertical side,
the second metal wire having a second width as measured from the third vertical side to the fourth vertical side,
the second width being approximately equal to the first width, and
the first vertical side being laterally offset from the third vertical side by a first offset distance and the second vertical side being laterally offset from the fourth vertical side by a second offset distance that is approximately equal to the first offset distance such that the third vertical side extends vertically from the first metal wire to a top surface of the second dielectric layer and such that the fourth vertical side extends vertically from the first dielectric layer to the top surface of the second dielectric layer.
2. The method of claim 1 , the forming of the first metal wire in the first trench in the first dielectric layer comprising:
forming the first trench in the first dielectric layer; and
depositing a first conductive interconnect material within the first trench to form the first metal wire.
3. The method of claim 1 , the forming of the second metal wire in the second trench comprising:
forming the second trench in the second dielectric layer such that one end of the second trench is above the first metal wire and an opposite end of the second trench extends laterally beyond the first metal wire over the first dielectric layer; and
depositing a second conductive interconnect material within the second trench to form the second metal wire.
4. The method of claim 1 , further comprising:
forming a first cap dielectric above the first metal wire and the first dielectric layer, the second metal wire being formed in the second dielectric layer and the first cap dielectric; and
forming a second cap dielectric above the second metal wire and the second dielectric layer, the first cap dielectric comprising any of silicon carbon nitride and hydrogenated silicon carbide.
5. The method of claim 4 , further comprising:
before forming the first metal wire in the first trench in the first dielectric layer, forming a third metal wire in a third dielectric layer and forming the first dielectric layer on the third dielectric layer, the first metal wire being formed such that the third metal wire and the first metal wire are in direct contact with one another.
6. The method of claim 5 , further comprising:
before the forming of the first dielectric layer, forming a third cap dielectric above the third metal wire and the third dielectric layer, the first metal wire being formed in the first dielectric layer and the third cap dielectric and between the first dielectric layer and the third dielectric layer.
7. The method of claim 1 , the first offset distance and the second offset distance each being at least approximately 0.6 μm.
8. An inductor comprising:
a first metal wire of the inductor in a first trench in a first dielectric layer of a first inductor level, the first metal wire having a first vertical side and a second vertical side opposite the first vertical side and the first metal wire further having a first width as measured from the first vertical side to the second vertical side, the first metal wire being electrically connected to a lower wire in a lower wiring level through a via, the lower wire of the lower wiring level and the first metal wire of the first inductor level having approximately equal widths and being wider than the via;
a second dielectric layer of a second inductor level above the first metal wire and the first dielectric layer;
a second trench that extends vertically through the second dielectric layer and that is partially offset from the first metal wire; and
a second metal wire of the inductor in the second trench, the second metal wire having a third vertical side and a fourth vertical side opposite the third vertical side,
the second metal wire being thicker than the first metal wire,
the second metal wire having a second width as measured from the third vertical side to the fourth vertical side,
the second width being approximately equal to the first width, and
the first vertical side being laterally offset from the third vertical side by a first offset distance and the second vertical side being laterally offset from the fourth vertical side by a second offset distance that is approximately equal to the first offset distance such that the third vertical side extends vertically from the first metal wire to a top surface of the second dielectric layer and such that the fourth vertical side extends vertically from the first dielectric layer to the top surface of the second dielectric layer.
9. The inductor of claim 8 , further comprising: a cap dielectric between the first dielectric layer and the second dielectric layer, the second metal wire being in the second dielectric layer and the cap dielectric, the cap dielectric comprising any of silicon carbon nitride and hydrogenated silicon carbide.
10. The inductor of claim 8 , further comprising:
a third metal wire in a third dielectric layer directly below the first metal wire, the first metal wire and the third metal wire being in direct contact with one another.
11. The inductor of claim 10 , further comprising:
a cap dielectric between the first dielectric layer and the third dielectric layer, the first metal wire being in the first dielectric layer and the cap dielectric, the cap dielectric comprising any of silicon carbon nitride and hydrogenated silicon carbide.
12. The inductor of claim 8 , the first metal wire and the second metal wire together forming a thick inductor wire.
13. The inductor of claim 8 , the first offset distance and the second offset distance each being at least approximately 0.6 μm.
14. A design structure tangibly embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure comprising:
a first metal wire of an inductor in a first trench in a first dielectric layer of a first inductor level, the first metal wire having a first vertical side and a second vertical side opposite the first vertical side and the first metal wire having a first width as measured from the first vertical side to the second vertical side, the first metal wire being electrically connected to a lower wire in a lower wiring level through a via, the lower wire of the lower wiring level and the first metal wire of the first inductor level having approximately equal widths and being wider than the via;
a second dielectric layer of a second inductor level above the first metal wire and the first dielectric layer;
a second trench that extends vertically through the second dielectric layer and that is partially offset from the first metal wire; and
a second metal wire of the inductor in the second trench, the second metal wire having a third vertical side and a fourth vertical side opposite the third vertical side,
the second metal wire being thicker than the first metal wire,
the second metal wire having a second width as measured from the third vertical side to the fourth vertical side,
the second width being approximately equal to the first width, and
the first vertical side being laterally offset from the third vertical side by a first offset distance and the second vertical side being laterally offset from the fourth vertical side by a second offset distance that is approximately equal to the first offset distance such that the third vertical side extends vertically from the first metal wire to a top surface of the second dielectric layer and such that the fourth vertical side extends vertically from the first dielectric layer to the top surface of the second dielectric layer.