Fin cut for taper device
A method of making a semiconductor device includes patterning a fin in a substrate; performing a first etching process to remove a portion of the fin to cut the fin into a first cut fin and a second cut fin, the first cut fin having a first fin end and a second fin end and the second cut fin having a first fin end and a second fin end; forming an oxide layer along an endwall of the first fin end and an endwall of the second fin end of the first cut fin, and an endwall of the first fin end and an endwall of the second fin end of the second cut fin; disposing a liner onto the oxide layer disposed onto the endwall of the first fin end of the first cut fin to form a bilayer liner; and performing a second etching process to remove a portion of the second cut fin.
1. A semiconductor device, comprising:
a fin patterned in a substrate, a length of the fin defined by a longitudinal axis, and a width of the fin defined by a transverse axis, the length being greater than the width, and the fin having a first distal endwall and a second distal endwall arranged on opposing ends of the fin along the longitudinal axis;
a bilayer liner disposed onto the first distal endwall, the bilayer liner comprising an oxide layer and a hard mask material layer; and
a monolayer liner disposed onto the second distal endwall, the monolayer liner comprising an oxide layer, and the oxide layer of the monolayer liner having a thickness that is greater than a thickness of the oxide layer of the bilayer liner;
wherein the bilayer liner and the monolayer liner are partially recessed with respect to a top surface of the fin.
2. The semiconductor device of claim 1 , wherein the thickness of the monolayer liner is in a range from about 3 to about 10 nm.
3. The semiconductor device of claim 1 , wherein a thickness of each layer of the bilayer liner is in a range from about 3 to about 10 nm.
4. The semiconductor device of claim 1 , wherein the substrate comprises silicon, silicon germanium, or a combination thereof.