Semiconductor device
A semiconductor device with a memory unit of which the variations in the operation timing are reduced is provided. For example, the semiconductor device is provided with dummy bit lines which are arranged collaterally with a proper bit line, and column direction load circuits which are sequentially coupled to the dummy bit lines. Each column direction load circuit is provided with plural NMOS transistors fixed to an off state, predetermined ones of which have the source and the drain suitably coupled to any of the dummy bit lines. Load capacitance accompanying diffusion layer capacitance of the predetermined NMOS transistors is added to the dummy bit lines, and corresponding to the load capacitance, the delay time from a decode activation signal to a dummy bit line signal is set up. The dummy bit line signal is employed when setting the start-up timing of a sense amplifier.
1. A semiconductor device comprising:
a plurality of word lines extending in a first direction;
a plurality of bit line pairs extending in a second direction intersecting the first direction;
a plurality of memory cells arranged at crossing portions of the word lines and the bit line pair, and configured with a circuit including a first MIS transistor;
a dummy bit line pair arranged side by side with the plurality of bit line pairs;
a load circuit including a plurality of second MIS transistors coupled to each of the dummy bit line pair;
a sense amplifier circuit operable to amplify a signal read from one of the memory cells through one of the bit line pair, in response to an enable signal; and
a control circuit operable to generate the enable signal by delaying corresponding to a load capacitance of the load circuit and parasitic capacitance of the dummy bit line pair in response to an access instruction to the memory cells.
2. The semiconductor device according to claim 1 ,
wherein a gate length of the second MIS transistor is longer than a gate length of the first MIS transistor.
3. The semiconductor device according to claim 1 further comprising:
a word line driving circuit including a third MIS transistor and operable to drive the word line,
wherein a gate length of the second MIS transistor is longer than a gate length of the third MIS transistor.
4. The semiconductor device according to claim 1 ,
wherein both of the source and the drain of a part of the second MIS transistors are coupled to the first dummy bit line, and both of the source and the drain of the other part of the second MIS transistors are coupled to the second dummy bit line.
5. The semiconductor device according to claim 1 ,
wherein one of the source and the drain of a part of the second MIS transistors is coupled to the first dummy bit line, and one of the source and the drain of the other part of the second MIS transistors is coupled to the second dummy bit line.
6. The semiconductor device according to claim 4 ,
wherein a voltage supplied to a gate of the second MIS transistor is a voltage to turn off the second MIS transistors.
7. The semiconductor device according to claim 4 ,
wherein a voltage supplied to a gate of the second MIS transistor is a voltage to turn on the second MIS transistors.
8. The semiconductor device according to claim 1 ,
wherein the first dummy bit line is coupled to an output of a single stage or plural stages of first inverter circuit operable with the first signal inputted,
wherein the second dummy bit line is supplied at its input terminal with a signal transmitted from an output terminal of the first dummy bit line, and
wherein the semiconductor device further comprises a single stage or plural stages of second inverter circuit operable with a signal from the output terminal of the second dummy bit line inputted and outputting the second signal.
9. The semiconductor device according to claim 8 further comprising:
a single stage or plural stages of third inverter circuit operable to input a signal from the output terminal of the first dummy bit line and operable to output a signal to the input terminal of the second dummy bit line.
10. The semiconductor device according to claim 8 ,
wherein gate lengths of MIS transistors configuring the first inverter circuit and the second inverter circuit are longer than a gate length of the first MIS transistor.
11. The semiconductor device according to claim 9 ,
wherein gate lengths of MIS transistors configuring the first inverter circuit through the third inverter circuit is longer than a gate length of the first MIS transistor.
12. The semiconductor device according to claim 1 further comprising:
a write timing adjusting circuit including a delay circuit,
wherein, in the case of write operation to one of the memory cells, the write timing adjusting circuit sets timing for deactivating an activated word line, by imparting a delay produced by the delay circuit to the second signal.
13. The semiconductor device according to claim 1 ,
wherein the load capacitance is diffusion layer capacitances of the plurality of the second MIS transistor.
14. The semiconductor device according to claim 1 ,
wherein the plurality of the second MIS transistor are NMOS transistors.