Die-die stacking
A semiconductor die is provided with an optical transmitter configured to transmit an optical signal to another die and an optical receiver configured to receive an optical signal from another die. Furthermore, a method of forming a semiconductor device is provided including forming a first semiconductor die with the steps of providing a semiconductor substrate, forming a transistor device at least partially over the semiconductor substrate, forming an optical receiver one of at least partially over and at least partially in the semiconductor substrate, forming a metallization layer over the transistor device, and forming an optical transmitter one of at least partially over the metallization layer and at least partially in the metallization layer.
1. An integrated circuit product, comprising:
a stack of semiconductor die comprising a first semiconductor die, a second semiconductor die and a third semiconductor die, wherein said first semiconductor die is stacked above said second semiconductor die and said third semiconductor die is stacked above said first semiconductor die;
a first optical transmitter and a first optical receiver positioned in said first semiconductor die, wherein said first optical transmitter is configured to transmit a first optical signal to said third semiconductor die and said first optical receiver is configured to receive a second optical signal from said second semiconductor die;
a second optical transmitter positioned in said second semiconductor die, wherein said second optical transmitter is configured to transmit said second optical signal to said first semiconductor die; and
a second optical receiver positioned in said third semiconductor die, wherein said second optical receiver is configured to receive said first optical signal.
2. The integrated circuit product of claim 1 , wherein said first semiconductor die further comprises at least one through-silicon via configured for electrically connecting said first semiconductor die to at least one of said second semiconductor die and said third semiconductor die.
3. The integrated circuit product of claim 1 , wherein said second semiconductor die further comprises a plurality of conductive bumps formed on an upper surface thereof and said first semiconductor die comprises a semiconductor substrate and a plurality of through-silicon vias formed at least partly in said semiconductor substrate that are configured for electrically connecting to said second semiconductor die via said plurality of conductive bumps of said second semiconductor die.
4. The integrated circuit product of claim 1 , wherein said first semiconductor die has a modulation circuitry configured to control a plurality of optical transmitters of said first semiconductor die and modulate at least one of the strengths of optical signals transmitted by said plurality of said optical transmitters and the strength of an optical signal resulting from a combination of optical signals transmitted by said plurality of said optical transmitters.
5. The integrated circuit product of claim 1 , wherein at least one of said first and second optical transmitters has one of an LCD, an LED and an organic LED and at least one of said first and second optical receivers has a photo diode.
6. The integrated circuit product of claim 1 , further comprising a first optical transceiver comprising the first optical transmitter and the first optical receiver.
7. The integrated circuit product of claim 1 , further comprising an optical transceiver comprising the second optical transmitter.
8. The integrated circuit product of claim 1 , further comprising an optical transceiver comprising the optical receiver.