Methods for fabricating integrated circuits using flowable chemical vapor deposition techniques with low-temperature thermal annealing
Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming an isolation trench between two fin structures on an integrated circuit substrate, forming a flowable film in the isolation trench using a flowable chemical vapor deposition process, and annealing the flowable film to form a silicon oxide dielectric layer in the isolation trench. The annealing is performed at a temperature of less than about 200° C. with a process gas including N 2 and H 2 O 2 .
1. A method for fabricating an integrated circuit comprising:
forming an isolation trench between two fin structures on an integrated circuit substrate;
forming a flowable film in the isolation trench using a flowable chemical vapor deposition process; and
annealing the flowable film to form a silicon oxide dielectric layer in the isolation trench, wherein the annealing is performed at a temperature of less than about 200° C. with a process gas comprising N 2 and H 2 O 2 .
2. The method of claim 1 , wherein annealing the flowable film is performed for a time period of about 4 hours to about 8 hours.
3. The method of claim 1 , wherein annealing the flowable film is performed for a time period of about 5 hours to about 7 hours.
4. The method of claim 1 , wherein forming the isolation trench between two fin structures comprises forming the isolation trench between two fin structures that are spaced apart for various devices at the 14 nm technology node.
5. The method of claim 1 , wherein forming the isolation trench between two fin structures comprises forming the isolation trench between two fin structures that are spaced apart for various devices at the 10 nm technology node.
6. The method of claim 1 , wherein annealing the flowable film is performed with a process gas comprising N 2 and H 2 O 2 at a ratio of about 3:1 to about 1:3.
7. The method of claim 1 , wherein annealing the flowable film is performed with a process gas comprising N 2 and H 2 O 2 at a ratio of about 2:1 to about 1:2.
8. The method of claim 1 , wherein annealing the flowable film is performed at a temperature of less than about 150° C.
9. The method of claim 1 , wherein forming the isolation trench comprises forming the isolation trench on a bulk silicon integrated circuit substrate.
10. The method of claim 1 , wherein forming the isolation trench comprises forming the isolation trench on a silicon-on-insulator (SOI) integrated circuit substrate.
11. The method of claim 1 , wherein forming the flowable film in the isolation trench comprises forming a flowable film in the isolation trench comprising Si—O, Si—H, and Si—OH bonds.
12. The method of claim 11 , wherein annealing the flowable film comprises converting the Si—O, Si—H, and Si—OH bonds into Si—O bonds.
13. The method of claim 1 , further comprising planarizing the silicon oxide dielectric layer to form a planarized silicon oxide dielectric layer.
14. The method of claim 13 , further comprising etching the planarized silicon oxide dielectric layer to form an etched silicon oxide shallow trench isolation structure.
15. The method of claim 14 , further comprising forming a transistor gate over the two fin structures and over the etched silicon oxide shallow trench isolation structure.
16. A method for fabricating an integrated circuit comprising:
forming an isolation trench between two fin structures on an integrated circuit substrate at a pitch of 14 nm, 10 nm, or smaller;
depositing a flowable film comprising Si—O, Si—H, and Si—OH bonds in the isolation trench using a flowable chemical vapor deposition process that supplies a silicon-containing compound and an oxidant; and
annealing the flowable film to form a silicon oxide dielectric layer in the isolation trench, wherein the annealing is performed at a temperature of less than about 150° C. with a process gas comprising N 2 and H 2 O 2 at a ratio of about 3:1 to about 1:3, and for a time period of about 4 hours to about 8 hours.
17. The method of claim 16 , wherein annealing the flowable film is performed with the process gas comprising N 2 and H 2 O 2 at a ratio of about 2:1 to about 1:2.
18. The method of claim 16 , wherein annealing the flowable film is performed for a time period of from about 5 hours to about 7 hours.
19. The method of claim 16 , wherein forming the isolation trench comprises forming the isolation trench on a bulk silicon integrated circuit substrate.
20. A method for fabricating an integrated circuit comprising:
forming an isolation trench between two fin structures on an integrated circuit substrate at a pitch of 14 nm, 10 nm, or smaller;
depositing a flowable film comprising Si—O, Si—H, and Si—OH bonds in the isolation trench using a flowable chemical vapor deposition process that supplies a silicon-containing compound and an oxidant;
annealing the flowable film to form a silicon oxide dielectric layer in the isolation trench, wherein the annealing is performed at a temperature of less than about 150° C. but greater than 50° C. with a process gas comprising N 2 and H 2 O 2 at a ratio of about 3:1 to about 1:3, and for a time period of about 4 hours to about 8 hours;
planarizing the silicon oxide dielectric layer to form a planarized silicon oxide dielectric layer;
etching the planarized silicon oxide dielectric layer to form an etched silicon oxide shallow trench isolation structure; and
forming a transistor gate over the two fin structures and over the etched silicon oxide shallow trench isolation structure.