Method for manufacturing semiconductor device
An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.
1. A method for manufacturing a semiconductor device comprising the steps of:
forming an oxide semiconductor layer of which a carrier concentration is higher than or equal to 1×10 18 cm −3 ;
cooling the oxide semiconductor layer under an atmosphere containing oxygen; and
forming an insulating layer in contact with a part of the oxide semiconductor layer,
wherein the part of the oxide semiconductor layer serves as a channel formation region.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein the oxide semiconductor layer of which the carrier concentration is higher than or equal to 1×10 18 cm −3 is formed by heating under an atmosphere containing nitrogen.
3. The method for manufacturing a semiconductor device according to claim 2 , wherein the heating is performed at a temperature higher than or equal to 400° C.
4. The method for manufacturing a semiconductor device according to claim 1 , wherein the oxide semiconductor layer of which the carrier concentration is higher than or equal to 1×10 18 cm −3 is formed by heating under reduced pressure.
5. The method for manufacturing a semiconductor device according to claim 4 , wherein the heating is performed at a temperature higher than or equal to 400° C.
6. The method for manufacturing a semiconductor device according to claim 1 , wherein a carrier concentration of the part of the oxide semiconductor layer is lower than or equal to 1×10 14 cm −3 .
7. The method for manufacturing a semiconductor device according to claim 1 , wherein the oxide semiconductor layer further comprises gallium and zinc.
8. The method for manufacturing a semiconductor device according to claim 1 , wherein the oxide semiconductor layer further comprises tin and zinc.
9. A method for manufacturing a semiconductor device comprising the steps of:
forming an oxide semiconductor layer of which a carrier concentration is higher than or equal to 1×10 18 cm −3 ;
cooling the oxide semiconductor layer under an atmosphere containing oxygen;
forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer; and
forming an insulating layer in contact with a part of the oxide semiconductor layer, the source electrode, and the drain electrode,
wherein the part of the oxide semiconductor layer serves as a channel formation region.
10. The method for manufacturing a semiconductor device according to claim 9 , wherein the oxide semiconductor layer of which the carrier concentration is higher than or equal to 1×10 18 cm −3 is formed by heating under an atmosphere containing nitrogen.
11. The method for manufacturing a semiconductor device according to claim 10 , wherein the heating is performed at a temperature higher than or equal to 400° C.
12. The method for manufacturing a semiconductor device according to claim 9 , wherein the oxide semiconductor layer of which the carrier concentration is higher than or equal to 1×10 18 cm −3 is formed by heating under reduced pressure.
13. The method for manufacturing a semiconductor device according to claim 12 , wherein the heating is performed at a temperature higher than or equal to 400° C.
14. The method for manufacturing a semiconductor device according to claim 9 , wherein a carrier concentration of the part of the oxide semiconductor layer is lower than or equal to 1×10 14 cm −3 .
15. The method for manufacturing a semiconductor device according to claim 9 , wherein the oxide semiconductor layer further comprises gallium and zinc.
16. The method for manufacturing a semiconductor device according to claim 9 , wherein the oxide semiconductor layer further comprises tin and zinc.