Semiconductor device and method of manufacturing the same

1. A method of forming a semiconductor device including a fin field effect transistor (FinFET), the method comprising:

forming a first sacrificial layer over a source/drain structure of a FinFET structure and an isolation insulating layer;

patterning the first sacrificial layer, thereby forming an opening;

forming a first liner layer on the isolation insulating layer in a bottom of the opening and on at least side faces of the patterned first sacrificial layer;

after the first liner layer is formed, forming a dielectric layer in the opening;

after the dielectric layer is formed, removing the patterned first sacrificial layer, thereby forming a contact opening over the source/drain structure; and

forming a conductive layer in the contact opening.

2. The method of claim 1 , wherein the first liner layer is made of one or more layers of silicon nitride based dielectric material.

3. The method of claim 1 , wherein the first sacrificial layer is made of Group IV elemental or compound material.

4. The method of claim 1 , wherein the first sacrificial layer is Si 1-x Ge x , where 0≤x≤0.4.

5. The method of claim 1 , wherein:

before the first sacrificial layer is formed, a second liner layer is formed over the source/drain structure and the isolation insulating layer, and

after the first sacrificial layer is removed, the second liner layer covering the upper portion of the source/drain structure is removed.

6. The method of claim 1 , further comprising, before forming the first sacrificial layer:

forming a second sacrificial layer over the source/drain structure and the isolation insulating layer; and

at least partially removing the second sacrificial layer, thereby forming an opening over the source/drain structure.

7. The method of claim 6 , wherein the second sacrificial layer is made of a different material than the first sacrificial layer.

8. The method of claim 6 , wherein the second sacrificial layer is made of dielectric material.

9. The method of claim 1 , further comprising, before the first sacrificial layer is formed, forming a metal gate structure of the FinFET.

10. The method of claim 1 , further comprising, after the first sacrificial layer is formed, forming a metal gate structure of the FinFET.

11. A method of forming a semiconductor device including fin field effect transistors (FinFETs), the method comprising:

forming a first sacrificial layer over a first source/drain structure of a first FinFET structure, a second source/drain structure of a second FinFET structure and an isolation insulating layer, the first source/drain structure being disposed adjacent to the second source/drain structure, the first and second FinFET structures including a gate structure and sidewall spacers formed on opposing sides of the gate structure;

patterning the first sacrificial layer, thereby forming an opening between the first source/drain structure and the second source/drain structure;

forming a dielectric layer in the opening;

after the dielectric layer is formed, removing the patterned first sacrificial layer, thereby forming a first contact opening over the first source/drain structure and a second contact opening over the second source/drain structure; and

forming a first conductive layer in the first contact opening and a second conductive layer in the second contact opening,

wherein the first sacrificial layer is made of a different material than the isolation insulating layer, the dielectric layer and the sidewall spacers.

12. The method of claim 11 , wherein the first sacrificial layer is made of Group IV elemental or compound material.

13. The method of claim 11 , wherein the first sacrificial layer is made of amorphous Si or poly Si.

14. The method of claim 11 , further comprising, before forming the dielectric layer, forming a first liner layer on the isolation insulating layer in a bottom of opening and at least side faces of the patterned first sacrificial layer.

15. The method of claim 14 , wherein the first liner layer is made of different material than the isolation insulating layer, the dielectric layer and the sidewall spacers.

16. The method of claim 15 , wherein the first liner layer is made of one or more layers of silicon nitride based dielectric material.

17. The method of claim 11 , wherein the first conductive layer and the second conductive layer are formed directly on the isolation insulating layer.

18. The method of claim 11 , wherein:

before the first sacrificial layer is formed, a second liner layer is formed over the first and second source/drain structures and the isolation insulating layer, and

after the first sacrificial layer is removed, the second liner layer covering the upper portion of the source/drain structure is removed.

19. The method of claim 18 , wherein before forming the dielectric layer, the second liner layer remains at a bottom of the opening.

20. A method of forming a semiconductor device, the method comprising:

forming a sacrificial layer to cover a source/drain structure;

forming a first dielectric layer over side surfaces of the sacrificial layer and an isolation insulating layer;

forming a second dielectric layer over the first dielectric layer;

after the first and second dielectric layers are formed, removing the sacrificial layer, thereby forming a contact opening over the source/drain structure; and

forming a conductive layer in the contact opening,

wherein the sacrificial layer is made of a different material than the isolation insulating layer and the first and second dielectric layers.