Fully depleted silicon on insulator power amplifier
The present disclosure generally relates to semiconductor structures and, more particularly, to a fully depleted silicon on insulator power amplifier with unique biases and voltage standing wave ratio protection and methods of manufacture. The structure includes a pseudo-differential common source amplifier; first stage cascode devices connected to the pseudo-differential common source amplifier and protecting the pseudo-differential common source amplifier from an over stress; second stage cascode devices connected to the first stage cascode devices and providing differential outputs; and at least one loop receiving the differential outputs from the second stage cascode devices and feeding back the differential outputs to the second stage cascode devices.
1. A structure comprising:
a pseudo-differential common source amplifier;
first stage cascode devices connected to the pseudo-differential common source amplifier and protecting the pseudo-differential common source amplifier from an over stress;
second stage cascode devices connected to the first stage cascode devices and providing differential outputs; and
at least one loop receiving the differential outputs from the second stage cascode devices and feeding back the differential outputs to the second stage cascode devices, wherein
the second stage cascode devices comprise a plurality of transistors and the at least one loop feeding back the differential outputs to the plurality of transistors,
gates of the plurality of transistors connect the differential outputs for reducing a drain to gate over stress, and
the at least one loop comprises a diode-connected transistor for boosting signals at the gates of the transistors.
2. The structure of claim 1 , wherein the at least one loop includes a low pass filter.
3. The structure of claim 2 , wherein the low pass filter has a corner frequency set to more than about three times a highest modulation bandwidth.
4. The structure of claim 3 , wherein the low pass filter comprises at least one capacitor and the corner frequency is programmable by changing the capacitance of the at least one capacitor.
5. The structure of claim 1 , wherein the first stage cascode devices and the second stage cascode devices are 1.8 V devices.
6. The structure of claim 1 , wherein the first stage cascode devices protect the pseudo-differential common source amplifier from over stress by adjusting a gate voltage of transistors of the first stage cascode devices through a cascode voltage.
7. The structure of claim 1 , wherein the differential outputs of the second stage cascode devices are connected to a transformer.
8. The structure of claim 7 , wherein the transformer is 1 turn primary and 2 turns secondary, which converts the differential outputs into a single-ended output.
9. The structure of claim 8 , wherein the single-ended output drives a load.
10. The structure of claim 1 , wherein the pseudo-differential common source amplifier is inputted simultaneously with a dc voltage and RF signal.
11. A structure comprising:
a core device emitting an output and comprising:
cascode devices providing differential outputs; and
at least one loop feeding back the differential outputs to the cascode devices;
a transformer providing an RF signal to the core device; and
a notch filter connected to the transformer and positioned at second harmonics of the RF signal, wherein
the cascode devices comprise a plurality of transistors and the at least one loop feeding back the differential outputs to the plurality of transistors,
gates of the plurality of transistors connect the differential outputs for reducing a drain to gate over stress, and
the at least one loop comprises a diode-connected transistor for boosting signals at the gates of the transistors.
12. The structure of claim 11 , wherein the transformer comprises a downward connected center tap running perpendicular to the transformer.
13. The structure of claim 11 , wherein the at least one loop includes a low pass filter.
14. The structure of claim 13 , wherein the low pass filter comprises at least one capacitor and a corner frequency of the low pass filter is programmable by changing the capacitance of the at least one capacitor.
15. The structure of claim 13 , wherein the corner frequency is set to more than about three times a highest modulation bandwidth.
16. The structure of claim 15 , wherein the plurality of transistors offer protection from the drain to gate over stress by adjusting a gate voltage of the plurality of transistors through a cascode voltage.
17. The structure of claim 16 , wherein a back-gate bias is changed from the cascode voltage to provide the protection from the drain to gate over stress.
18. The structure of claim 17 , wherein the drain to gate over stress is from a voltage standing wave ratio.
19. A method, comprising:
protecting a pseudo-differential common source amplifier from an over stress through first stage cascode devices connected to the pseudo-differential common source amplifier;
providing differential outputs from second stage cascode devices connected to the first stage cascode devices; and
feeding back through at least one loop the differential outputs to the second stage cascode devices, wherein
the second stage cascode devices comprise a plurality of transistors and the at least one loop feeding back the differential outputs to the plurality of transistors,
gates of the plurality of transistors connect the differential outputs for reducing a drain to gate over stress, and
the at least one loop comprises a diode-connected transistor for boosting signals at the gates of the transistors.
20. The method of claim 19 , further comprising converting the differential outputs into a single-ended output through a transformer connected to the second stage cascode devices.