Method and processing apparatus for performing pre-treatment to form copper wiring in recess formed in substrate
There is provided a method for performing a pre-treatment to form a copper wiring in a recess formed in a substrate, which includes forming a barrier layer on a surface of the substrate that defines the recess, and forming a seed layer on the barrier layer. The method further includes at least one of etching the barrier layer and etching the seed layer. In the at least one of etching the barrier layer and etching the seed layer, the substrate is inclined with respect to an irradiation direction of ions while rotating the substrate.
1. A method for performing a pre-treatment to form a copper wiring in a recess formed in a substrate, comprising:
forming a barrier layer on a surface of the substrate that defines the recess; and
forming a seed layer on the barrier layer,
wherein the method further comprises:
at least one of etching the barrier layer and etching the seed layer,
wherein, in the at least one of etching the barrier layer and etching the seed layer, the substrate is inclined with respect to an irradiation direction of ions at an angle of 10 degrees or more while rotating the substrate.
2. The method of claim 1 , wherein the method comprises both the etching the barrier layer and the etching the seed layer, and
in both the etching the barrier layer and the etching the seed layer, a mounting table configured to hold the substrate inside a single chamber body is inclined such that a central axis line of a holding part of the mounting table is inclined with respect to the irradiation direction of ions, and the holding part is rotated about the central axis line.
3. A processing apparatus, comprising:
a mounting table including a holding part configured to hold a substrate and to rotate about a first axis line as a central axis line of the holding part, the mounting table being configured to rotate about a second axis line perpendicular to the first axis line;
a chamber body configured to provide a chamber which accommodates the mounting table therein, the chamber including a first space for film formation and a second space for etching which are arranged in a circumferential direction with respect to the second axis line; and
a partition wall located between the first space and the second space.
4. The apparatus of claim 3 , further comprising:
a target holder configured to hold a target for film formation disposed in the first space; and
a plasma generating part configured to excite a gas supplied to the second space.