Semiconductor memory device
A semiconductor memory device includes a first memory cell array layer includes a first memory cell array region, in which memory cells are 3-dimensionally arrayed, and a first and second surface wiring layer connected to the memory cells. A second memory cell array layer includes second memory cell array region, in which memory cells are 3-dimensionally arrayed, and a third and fourth surface wiring layer connected to the second plurality of memory cells. The first memory cell array layer and the second memory cell array layer are bonded to each other such that the second surface wiring layer and the third surface wiring layer face each other and are bonded to each other. The first and second memory cell array regions overlap each other as viewed from a direction orthogonal to a layer plane.
1. A semiconductor memory device, comprising:
a first memory cell array layer having a first surface, a second surface opposite to the first surface, a first memory cell array region in which a first plurality of memory cells is 3-dimensionally arrayed, and a first surface wiring layer and a second surface wiring layer at the first surface and the second surface, respectively, and connected to the first plurality of memory cells; and
a second memory cell array layer having a third surface, a fourth surface opposite the third surface, a second memory cell array region in which a second plurality of memory cells is 3-dimensionally arrayed, and a third surface wiring layer and the fourth surface wiring layer at the third surface and the fourth surface, respectively, and connected to the second plurality of memory cells, wherein
the first memory cell array layer and the second memory cell array layer are bonded to each other such that the second surface wiring layer and the third surface wiring layer face each other and are bonded to each other, and the first and second memory cell array regions overlap each other as viewed from a direction orthogonal to the first surface.
2. The semiconductor memory device according to claim 1 , further comprising:
a peripheral circuit layer bonded to the first surface of the first memory cell array layer and electrically connected to the first plurality of memory cells.
3. The semiconductor memory device according to claim 2 , wherein the peripheral circuit layer includes a silicon substrate layer.
4. The semiconductor memory device according to claim 1 , further comprising:
a third memory cell array layer having a fifth surface, a sixth surface opposite the fifth surface, a third memory cell array region in which a third plurality of memory cells are 3-dimensionally arrayed, a fifth surface wiring layer at the fifth surface and connected to the third plurality of memory cells, wherein
the third memory cell array layer is bonded to second memory cell array layer such that the fifth surface wiring layer is bonded to a fourth surface wiring layer at the fourth surface of the second memory cell array layer.
5. The semiconductor memory device according to claim 1 , wherein the second and third surface wiring layers are disposed outside the first and second memory cell array regions as viewed from the direction orthogonal to the first surface.
6. The semiconductor memory device according to claim 1 , wherein at least a portion of the second surface wiring layer and a portion of the third surface wiring layer are disposed inside the first and second memory cell array regions as viewed from the direction orthogonal to the first surface.
7. The semiconductor memory device according to claim 1 , wherein in at least one of the first and second memory cell array layers includes a memory string that includes a memory cell storing an array layer ID and a transistor for selecting memory cell array layers according to the array layer ID.
8. A semiconductor memory device, comprising:
a peripheral circuit layer that includes a circuit substrate, a control circuit formed on a circuit formation surface of the circuit substrate, and a circuit-side wiring layer formed at the circuit formation surface and electrically connected to the control circuit;
a first memory cell array layer having a first surface, a second surface opposite to the first surface, a first memory cell array region in which a first plurality of memory cells is 3-dimensionally arrayed, a first signal line extraction electrode electrically connected to the first plurality of memory cells, a first external connection electrode disposed outside the first memory cell array region, as viewed in a direction orthogonal to the first surface, and electrically connected to the control circuit, a first surface wiring layer at the first surface and connected to the first signal line extraction electrode, and a second surface wiring layer at the second surface and connected to the first external connection electrode; and
a second memory cell array layer having a third surface, a fourth surface opposite to the third surface, a second memory cell array region in which a second plurality of memory cells is 3-dimensionally arrayed, a second signal line extraction electrode electrically connected to the second plurality of memory cells, a second external connection electrode disposed outside the second memory cell array region, as viewed in the direction orthogonal to the first surface, and electrically connected to the first external connection electrode, a third surface wiring layer at the third surface and connected to the second signal line extraction electrode, and a fourth surface wiring layer at the fourth surface and connected to the second external connection electrode, wherein,
the first surface faces the peripheral circuit layer,
the circuit-side wiring layer and the first surface wiring layer are bonded to each other,
the third surface faces the first memory cell array layer, and
the second surface wiring layer and the third surface wiring layer are bonded to each other.
9. The semiconductor memory device according to claim 8 , wherein neither of the first or second memory cell array layers include a substrate.
10. The semiconductor memory device according to claim 8 , wherein
the circuit-side wiring layer and the first surface wiring layer are directly bonded to each other, and
the second surface wiring layer and the third surface wiring layer are directly bonded to each other.
11. The semiconductor memory device according to claim 8 , wherein the first plurality of memory cells comprises:
a first stacked body in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked,
first columnar portions extending in a stacking direction in the first stacked body,
a first bit line electrically connected to the first columnar portions on a side of the first surface,
a first source line electrically connected to the first columnar portions on a side of the second surface, and
a first source-side wiring layer disposed closer to the second surface than the first source line.
12. The semiconductor memory device according to claim 11 , wherein the second plurality of memory cells comprises:
a second stacked body in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked,
second columnar portions extending in a stacking direction in the second stacked body,
a second bit line electrically connected to the second columnar portions on a side of the third surface,
a second source line electrically connected to the second columnar portions on a side of the fourth surface, and a second source-side wiring layer disposed closer to the fourth surface than the second source line.
13. The semiconductor memory device according to claim 12 , wherein
the first source-side wiring layer is connected to the second bit line at a position inside the first and second memory cell array regions when viewed in the direction orthogonal to the first surface.
14. The semiconductor memory device according to claim 8 , wherein the second plurality of memory cells comprises:
a stacked body in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked,
columnar portions extending in a stacking direction in the stacked body,
a bit line electrically connected to the columnar portions on a side of the third surface,
a source line electrically connected to the columnar portions on a side of the fourth surface, and a source-side wiring layer disposed closer to the fourth surface than the second source line.
15. The semiconductor memory device according to claim 8 , wherein
the second surface wiring layer is connected to the first signal line extraction electrode at a position inside the first memory cell array region, when viewed in the direction orthogonal to the first surface, and
the third surface wiring layer is connected to the second signal line extraction electrode at a position inside the second memory cell array region, when viewed in the direction orthogonal to the first surface.
16. The semiconductor memory device according to claim 8 , further comprising:
a third memory cell array layer stacked on the second memory cell array layer.
17. The semiconductor memory device according to claim 8 , further comprising:
a memory string in the first memory cell array layer, the memory string including a memory cell storing an array layer ID and a transistor for selecting the first memory cell array layer, the memory string being electrically connected to the first signal line extraction electrode.
18. The semiconductor memory device according to claim 8 , wherein at least one of the first and second memory cell array layers includes a memory string that includes a memory cell storing an array layer ID and a transistor for selecting memory cell array layers according to the array layer ID.
19. The semiconductor memory device according to claim 8 , further comprising:
an array layer select circuit configured to select a memory cell array layer according to an array layer ID, wherein
wherein a part of the array layer select circuit is formed for each memory block of the first memory cell array layer.
20. The semiconductor memory device according to claim 8 , wherein the circuit substrate is a silicon substrate.