Memory system implementing write abort operation for reduced read latency
A memory system including a memory device of storage transistors organized in multiple memory banks where the memory device interacts with a controller device to perform read and write operations. In some embodiments, the controller device is configured to issue to the memory device a write command and a write termination command, where the write command causing the memory device to initiate a write operation in the memory device and the write termination command causing the memory device to terminate the write operation. In one embodiment, the controller device issues a write abort command as the write termination command to terminate a write operation in progress at a certain memory bank of the memory device in order to issue a read command to read data from the same memory bank. The terminated write operation can resume after the completion of the read operation.
1 . A memory system, comprising:
a memory device comprising an array of storage transistors for storing data, the storage transistors being organized in a plurality of memory banks, each memory bank comprising a plurality of memory pages; and
a controller device configured to interact with the memory device to perform read and write operations, each read or write operation being performed on a memory page in a memory bank,
wherein in response to a write operation being in progress at a first memory page in a first memory bank of the memory device and further in response to the controller device receiving a request for read data from a second memory page in the first memory bank of the memory device, the controller device issues a first command to the memory device to terminate the write operation in progress at the first memory page in the first memory bank of the memory device, and subsequent to terminating the write operation, the controller device issues a second command to the memory device to read data from the second memory page in the first memory bank of the memory device; and
wherein each of the write operations comprises an erase phase followed by a program phase, each of the erase phase and the program phase comprises a set-up stage and a voltage pulse stage, and wherein in response to a first write command being issued to the memory device at a given memory page of a given memory bank to initiate a second write operation, the controller device tracks the phase of the write operation being performed at the given memory page of the given memory bank of the memory device.
2 . The memory system of claim 1 , wherein subsequent to the read operation to the second memory page in the first memory bank being completed, the controller device issues a third command to the memory device to resume the write operation previously in progress at the first memory page in the first memory bank.
3 . The memory system of claim 2 , wherein the controller device issues the third command with associated write data to the memory device to resume the write operation previously in progress at the first memory page in the first memory bank.
4 . The memory system of claim 2 , wherein the controller device issues the third command without associated write data to the memory device to resume the write operation previously in progress at the first memory page in the first memory bank, the write operation using the write data stored in a data latch circuit associated with the first memory bank.
5 . The memory system of claim 1 , wherein in response to the controller device receiving the request for read data from the second memory page of the first memory bank of the memory device, the controller device issues the first command to the memory device to terminate the write operation in progress at the first memory page of the first memory bank of the memory device in response to determining that the write operation in progress is in the set-up stage of either the erase phase or the program phase or in the voltage pulse stage of the erase phase.
6 . The memory system of claim 1 , wherein in response to the controller device receiving the request for read data from the second memory page of the first memory bank of the memory device and in response to the controller device determining the write operation in progress at the first memory page of the first memory bank of the memory device is in the voltage pulse stage of the program phase, the controller device is prevented from issuing the first command to the memory device to terminate the write operation in progress.
7 . The memory system of claim 5 , wherein in response to the first command being issued during the set-up stage of the erase phase of the write operation in progress, the memory device terminates the write operation and the controller device issues the second command a first time duration after issuing the first command.
8 . The memory system of claim 7 , wherein subsequent to the read operation to the second memory page of the first memory bank being completed, the controller device issues the third command to the memory device to resume the write operation previously in progress at the first memory page of the first memory bank at the start of the set-up stage of the erase phase.
9 . The memory system of claim 8 , wherein the controller device determines the terminated write operation was in the set-up stage of the erase phase by determining the write operation is at least a second time duration before the end of the set-up stage of the erase phase.
10 . The memory system of claim 5 , wherein in response to the first command being issued during the voltage pulse stage of the erase phase of the write operation in progress, the memory device terminates the write operation after completion of the voltage pulse stage of the erase phase and the controller device issues the second command a third time duration after the write operation in progress completes the voltage pulse stage of the erase phase.
11 . The memory system of claim 10 , wherein subsequent to the read operation to the second memory page of the first memory bank being completed, the controller device issues the third command to the memory device to resume the write operation previously in progress at the first memory page of the first memory bank at the start of the set-up stage of the program phase.
12 . The memory system of claim 10 , wherein the controller device determines the write operation in progress is in the voltage pulse stage of the erase phase by determining the write operation is at least a fourth time duration before the end of the voltage pulse stage of the erase phase.
13 . The memory system of claim 5 , wherein in response to the first command being issued during the set-up stage of the program phase of the write operation in progress, the memory device terminates the write operation and the controller device issues the second command a first time duration after issuing the first command.
14 . The memory system of claim 13 , wherein subsequent to the read operation to the second memory page of the first memory bank being completed, the controller device issues the third command to the memory device to resume the write operation previously in progress at the first memory page of the first memory bank at the start of the set-up stage of the program phase.
15 . The memory system of claim 13 , wherein the controller device determines the write operation in progress is in the set-up stage of the program phase by determining the write operation is at least a fifth time duration before the end of the set-up stage of the program phase.
16 . The memory system of claim 1 , wherein the memory device stores the write data of the write operation to the first memory page in the first memory bank in a first data latch associated with the first memory bank; and wherein the write operation further comprises a sensing phase before the erase phase, the sensing phase being performed to read data stored in a third memory page of the first memory bank, the memory device storing the read data associated with the third memory page in a second data latch; and wherein the write operation at the first memory bank comprises writing the write data stored in the first data latch to the first memory page and writing the read data stored in the second data latch to the third memory page during the erase phase and the program phase.
17 . The memory system of claim 16 , wherein in response to the first command being issued during the sensing phase of the write operation in progress, the memory device terminates the write operation after completion of the sensing phase and the controller device issues the second command after the write operation in progress completes the sensing phase.
18 . The memory system of claim 17 , wherein the memory device retrieves stored data from the second memory page of the first memory bank in response to the second command and stores the read data in the first data latch.
19 . The memory system of claim 18 , wherein subsequent to the read operation to the second memory page of the first memory bank being completed, the controller device issues the third command with associated write data to the memory device to resume the write operation previously in progress at the first memory page of the first memory bank at the start of the set-up stage of the erase phase, the write data being stored in the first data latch.
20 . The memory system of claim 17 , wherein the memory device retrieves stored data from the second memory page of the first memory bank in response to the second command and stores the read data in a third data latch.
21 . The memory system of claim 20 , wherein subsequent to the read operation to the second memory page of the first memory bank being completed, the controller device issues the third command without associated write data to the memory device to resume the write operation previously in progress at the first memory page of the first memory bank at the start of the set-up stage of the erase phase, the write operation using the write data being stored and remaining in the first data latch.
22 . The memory system of claim 1 , wherein a memory page comprises 512 bits of data.
23 . The memory system of claim 1 , wherein the memory device comprises the plurality of memory banks organized as a two-dimensional array of tiles formed on a semiconductor substrate, each tile comprising a three dimensional array of storage transistors arranged in a plurality of NOR memory strings and a modular control circuit comprising support circuitry for operating the storage transistors.
24 . The memory system of claim 23 , wherein the memory device comprises a quasi-volatile memory device.
25 . A memory system, comprising:
a memory device comprising an array of storage transistors for storing data, the storage transistors being organized in a plurality of memory banks, each memory bank comprising a plurality of memory pages; and
a controller device configured to interact with the memory device to perform read and write operations, each read or write operation being performed on a memory page in a memory bank,
wherein the controller device is configured to issue to the memory device a write command and a write termination command, the write command causing the memory device to initiate a write operation in the memory device and the write termination command causing the memory device to terminate the memory operation, and wherein in response to a write operation being in progress at a first memory page in a first memory bank of the memory device and further in response to the controller device receiving a request for read data from a second memory page in the first memory bank, the controller device issues the write termination command to terminate the write operation in progress; and
wherein each of the write operations comprises an erase phase followed by a program phase, each of the erase phase and the program phase comprises a set-up stage and a voltage pulse stage, and wherein in response to a first write command being issued to the memory device at a given memory page of a given memory bank to initiate a second write operation, the controller device tracks the phase of the second write operation being performed at the given memory page of the given memory bank of the memory device.
26 . The memory system of claim 25 , wherein the controller device is further configured to issue to the memory device a resume write command, the resume write command causing the memory device to resume the write operation that was previously terminated by the write termination command.
27 . A method in a system in which a memory controller interacts with a memory device to perform read and write operations at the memory device, the memory device including storage transistors organized in a plurality of memory banks, each memory bank including a plurality of memory pages and each read or write operation being performed on a memory page in a memory bank, the method comprising:
receiving, at the memory device, a first command being a write command and write data from the memory controller to perform a write operation at the memory device, the write command comprising at least a memory address specifying a first memory page of a first memory bank in the memory device at which the write data is to be stored;
receiving, at the memory controller, a request for read data from a second memory page of the first memory bank;
in response to receiving the request for read data for the first memory bank, determining, at the memory controller, the write operation associated with the first command at the first memory bank is in progress;
in response to determining the write operation at the first memory bank is in progress, receiving, at the memory device, a second command from the memory controller to terminate the write operation in progress at the first memory bank of the memory device; and
subsequent to terminating the write operation, receiving, at the memory device, a third command from the memory controller to read data from the second memory page of the first memory bank of the memory device, and
wherein each of the write operations comprises an erase phase followed by a program phase, each of the erase phase and the program phase comprises a set-up stage and a voltage pulse stage, and the method further comprises, in response to a first write command being issued to the memory device from the memory controller at a given memory page of a given memory bank to initiate a second write operation, tracking at the memory controller the phase of the second write operation being performed at the given memory page of the given memory bank of the memory device.
28 . The method of claim 27 , further comprising:
subsequent to the read operation to the first memory bank being completed, receiving, at the memory device, a fourth command from the memory controller to resume the write operation previously in progress at the first memory page of the first memory bank.
29 . The method of claim 28 , wherein receiving the fourth command comprises receiving the fourth command with the write data.
30 . The method of claim 28 , wherein receiving the fourth command comprises receiving the fourth command without the write data, the write operation being performed using the write data previously sent with the first command.
31 . A method in a memory device in which the memory device interacts with a memory controller to perform read and write operations at the memory device, the memory device including storage transistors organized in a plurality of memory banks, each memory bank including a plurality of memory pages and each read or write operation being performed on a memory page in a memory bank, the method comprising:
receiving a first command being a write command and write data from the memory controller to perform a write operation at the memory device, the write command comprising at least a memory address specifying a first memory page of a first memory bank in the memory device at which the write data is to be stored;
while the write operation is in progress at the first memory bank of the memory device, receiving a second command from the memory controller to terminate the write operation in progress at the first memory bank; and
subsequent to terminating the write operation, receiving a third command from the memory controller to read data from a second memory page of the first memory bank of the memory device, and
wherein each of the write operations comprises an erase phase followed by a program phase, each of the erase phase and the program phase comprises a set-up stage and a voltage pulse stage, and the method further comprises, in response to a first write command being issued to the memory device from the memory controller at a given memory page of a given memory bank to initiate a second write operation, tracking at the memory controller the phase of the second write operation being performed at the given memory page of the given memory bank of the memory device.
32 . The method of claim 31 , further comprising:
subsequent to the read operation to the first memory bank being completed, receiving a fourth command to resume the write operation previously in progress at the first memory page of the first memory bank.
33 . The method of claim 32 , wherein receiving the fourth command comprises receiving the fourth command with the write data.
34 . The method of claim 32 , wherein receiving the fourth command comprises receiving the fourth command without the write data, the write operation being performed using the write data previously sent with the first command.
35 . A method in a memory controller in which the memory controller interacts with a memory device to perform read and write operations at the memory device, the memory device including storage transistors organized in a plurality of memory banks, each memory bank including a plurality of memory pages and each read or write operation being performed on a memory page in a memory bank, the method comprising:
issuing a first command being a write command with write data to the memory device to perform a write operation at the memory device, the write command comprising at least a memory address specifying a first memory page of a first memory bank in the memory device at which the write data is to be stored;
receiving a request for read data from a second memory page of the first memory bank;
determining the write operation associated with the first command at the first memory bank is in progress;
issuing a second command to the memory device to terminate the write operation in progress at the first memory bank; and
subsequent to terminating the write operation, issuing a third command to the memory device to read data from the second memory page of the first memory bank of the memory device, and
wherein each of the write operations comprises an erase phase followed by a program phase, each of the erase phase and the program phase comprises a set-up stage and a voltage pulse stage, and the method further comprises, in response to a first write command being issued to the memory device from the memory controller at a given memory page of a given memory bank to initiate a second write operation, tracking at the memory controller the phase of the second write operation being performed at the given memory page of the given memory bank of the memory device.
36 . The method of claim 35 , further comprising:
subsequent to the read operation to the first memory bank being completed, issuing a fourth command to the memory device to resume the write operation previously in progress at the first memory page of the first memory bank.
37 . The method of claim 36 , wherein receiving the fourth command comprises receiving the fourth command with the write data.
38 . The method of claim 36 , wherein receiving the fourth command comprises receiving the fourth command without the write data, the write operation being performed using the write data previously sent with the first command.