Configurable random-access memory (RAM) array including through-silicon via (TSV) bypassing physical layer
View Patent ↗A system comprising a main logic circuit comprising a memory controller comprising a signal control circuit and a through-silicon via (TSV) connection point electrically coupled to the signal control circuit, and a memory device comprising a memory unit comprising a TSV electrically coupled to the TSV connection point of the main logic circuit, wherein the signal control circuit is to transmit a signal using the TSV to operate the memory device.
1. A system comprising:
a memory controller implemented on a circuit chip that is without any memory physical layer interface (memory PHY) therein, the memory controller comprising:
a signal control circuit; and
a through-silicon via (TSV) connection point electrically coupled to the signal control circuit, wherein the TSV connection point and the memory controller are packaged into a main logic circuit comprising the memory controller; and
a memory device comprising a memory unit comprising a TSV electrically coupled to the TSV connection point, wherein the signal control circuit is to transmit a signal using the TSV directly to the memory device without utilizing any interface protocol provided by any memory PHY.
2. The system of claim 1 , wherein the signal control circuit is to transmit a plurality of signals using a plurality of TSVs to the memory unit without using any memory PHY, wherein the plurality of TSVs comprises the TSV.
3. The system of claim 2 , wherein the plurality of signals comprise at least one of an address signal, a data signal, an operation flag signal, or a power reference signal.
4. The system of claim 1 , further comprising:
a memory structure layer comprising a plurality of memory units comprising the memory unit, wherein the main logic circuit further comprises a plurality of memory unit receptors correspondingly match the plurality of memory units.
5. The system of claim 4 , wherein each one of the plurality of memory units comprises a plurality of TSVs that are coupled to a plurality of TSV connection points of a respective corresponding memory unit receptor in the main logic circuit, wherein the plurality of TSVs comprises the TSV, and wherein the signal control circuit is to use the plurality of TSVs to transmit a plurality of signals to the memory unit.
6. The system of claim 1 , further comprising:
a plurality of memory structure layers, each comprising a plurality of memory units, wherein each one of the plurality of memory units comprises a plurality of TSVs, and wherein the plurality of memory structure layers are bonded to the main logic circuit to electrically couple the plurality of memory units to the signal control circuit using the plurality of TSVs of the corresponding memory unit.
7. The system of claim 1 , wherein the memory device is at least one of a dynamic random-access memory, a synchronous dynamic random-access memory, or a static random-access memory.
8. The system of claim 1 , further comprising a processing device communicatively coupled to the memory controller, wherein the processing device is at least one of a central processing unit or a graphic processing unit.
9. The system of claim 1 , wherein the main logic circuit is fabricated using a first fabrication process, and the memory unit is fabricated using a second fabrication process, and wherein the first fabrication process is independent from the second fabrication process.
10. A processing device, comprising:
a memory controller implemented on a circuit chip that is without any memory physical layer interface (memory PHY) therein; and
a memory structure comprising a memory unit, the memory unit comprising a through-silicon via (TSV) coupled to a TSV connection point of the memory controller, wherein the TSV connection point and the memory controller are packaged into a main logic circuit comprising the memory controller, wherein the TSV connection point is electrically coupled to a signal control circuit of the memory controller, and wherein the signal control circuit of the memory controller is to transmit a signal using the TSV directly to the TSV connection point to operate the memory device without utilizing any interface protocol provided by any memory PHY.
11. The processing device of claim 10 , wherein the memory controller comprises the signal control circuit.
12. The processing device of claim 10 , wherein the signal control circuit is to transmit a plurality of signals using a plurality of TSVs to the memory unit without using any memory PHY, and wherein the plurality of signals comprise at least one of an address signal, a data signal, an operation flag signal, or a power reference signal.
13. The processing device of claim 10 ,
wherein the memory device further comprises a memory structure layer comprising a plurality of memory units comprising the memory unit, wherein the main logic circuit further comprises a plurality of memory unit receptors correspondingly match the plurality of memory units.
14. The processing device of claim 13 , wherein each one of the plurality of memory units comprises a plurality of TSVs that are coupled to a plurality of TSV connection points of a corresponding memory unit receptor in the main logic circuit, wherein the plurality of TSVs comprises the TSV, and wherein the signal control circuit is to use the plurality of TSVs to transmit a plurality of signals to the memory unit.
15. The processing device of claim 10 ,
wherein the memory device further comprises a plurality of memory structure layers, each comprising a plurality of memory units, wherein each one of the plurality of memory units comprises a plurality of TSVs, and wherein the plurality of memory structure layers are bonded to the main logic circuit to electrically couple the plurality of memory units to the signal control circuit using the plurality of TSVs of the corresponding memory unit.
16. The processing device of claim 10 , wherein the memory device is at least one of a dynamic random-access memory, a synchronous dynamic random-access memory, or a static random-access memory.
17. A method comprising:
fabricating in a first fabrication process a main logic circuit comprising a memory controller, wherein the main logic circuit is without a memory physical layer interface (memory PHY) therein, and the memory controller comprises a pre-determined number of memory unit receptors;
fabricating in a second fabrication process a plurality of memory units, each comprising a plurality of through-silicon vias (TSVs), wherein the first fabrication process is independent from the second fabrication process;
determining, by a processing device based on a system specification, a number of memory structures, wherein each memory structure is to hold the pre-determined number of memory units; and
bonding the determined number of memory structures to the main logic circuit by matching the pre-determined number of memory units to the pre-determined number of memory unit receptors, forming, using the plurality of TSVs, signal paths between the memory controller and the plurality of memory units without using any memory PHY.
18. The method of claim 17 , further comprising:
operating the memory controller to transmit, using the plurality of TSVs, a plurality of signals to the pre-determined number of memory units.
19. The method of claim 18 , wherein the plurality of signals comprise at least one of an address signal, a data signal, an operation flag signal, or a power reference signal.
20. The method of claim 17 , wherein the plurality of TSVs in each one of the plurality of memory units are coupled to a plurality of TSV connection points of a corresponding memory unit receptor in the main logic circuit, and wherein a signal control circuit is to use the plurality of TSVs to transmit a plurality of signals to the memory unit.