Stacked semiconductor die assemblies with partitioned logic and associated systems and methods
Stacked semiconductor die assemblies having memory dies stacked between partitioned logic dies and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a first logic die, a second logic die, and a thermally conductive casing defining an enclosure. The stack of memory dies can be disposed within the enclosure and between the first and second logic dies.
1. A semiconductor die assembly, comprising:
a first logic die including a memory controller;
a second logic die including—
a central portion beneath a footprint of the first logic die;
a peripheral portion extending beyond the footprint of the first logic die;
a circuit component disposed in the central portion; and
a communication component disposed in the peripheral portion and configured to deserialize serial input data into a plurality of input data streams, wherein the circuit component has a lower operating temperature than the communication component;
a stack of memory dies positioned on the second logic die, wherein the first logic die is positioned on the stack of memory dies;
a plurality of first through-stack interconnects extending through the entire stack of memory dies to couple the memory controller to the communication component, wherein the first through-stack interconnects are configured to transmit (a) the plurality of input data streams from the communication component to the memory controller and (b) a plurality of output data streams from the memory controller to the communication component;
a plurality of second through-stack interconnects extending through the entire stack of memory dies to couple the first logic die to the circuit component; and
a thermally conductive casing having a cap portion over the first logic die and a wall portion extending from the cap portion, wherein the wall portion is attached to the peripheral portion of the second logic die and configured to dissipate heat from the communication component during operation.
2. The semiconductor die assembly of claim 1 wherein the first logic die includes a bulk portion of a semiconductor substrate, and wherein the bulk portion is configured to facilitate heat conduction to the cap portion of the thermally conductive casing.
3. The semiconductor die assembly of claim 2 wherein the first logic die has a thickness of about 300 μm to about 1000 μm, and wherein the second logic die has a thickness of about 50 μm to about 200 μm.
4. The semiconductor die assembly of claim 2 , further comprising:
a first thermal interface material attaching the bulk portion of the first logic die to the cap portion of the thermally conductive casing; and
a second thermal interface material attaching the peripheral portion of the second logic die to the wall portion of the thermally conductive casing.
5. The semiconductor die assembly of claim 1 , further comprising a plurality of third through-stack interconnects extending through the entire stack of memory dies between the first and the second logic dies, wherein the third through-stack interconnects are functionally isolated from the communication component and the circuit component.
6. The semiconductor die assembly of claim 5 wherein the third through-stack interconnects are functionally isolated from the memory dies.
7. The semiconductor die assembly of claim 1 , further comprising a plurality of thermally conductive dummy elements positioned interstitially between the first through-stack interconnects.
8. The semiconductor die assembly of claim 1 , further comprising a plurality of third through-stack interconnects extending at least partially through the stack of memory dies, wherein each of the memory dies is coupled to the memory controller via one or more of the third through-stack interconnects.
9. The semiconductor die assembly of claim 1 wherein the circuit component is a power distribution component.
10. The semiconductor die assembly of claim 1 wherein the circuit component is a clock circuit.
11. The semiconductor die assembly of claim 1 wherein the communication component includes a serial/deserializer circuit.
12. The semiconductor die assembly of claim 1 wherein the cap and wall portions of the thermally conductive casing define a cavity, wherein the stack of memory dies is disposed within the cavity, and further comprising a dielectric underfill material encapsulating the first logic die, the second logic die, and the stack of memory dies, wherein the dielectric underfill material contacts the thermally conductive casing.
13. A method of forming a semiconductor die assembly, the method comprising:
disposing a stack of memory dies on a central portion of a first logic die, wherein the first logic die includes (a) a circuit component in the central portion and (b) a communication component in a peripheral portion that is outside the central portion, wherein the communication component is configured to deserialize serial input data into a plurality of input data streams, and wherein the circuit component has a lower operating temperature than the communication component;
disposing a second logic die on the stack of memory dies, wherein the second logic die includes a memory controller;
forming a plurality of first through-stack interconnects through the entire stack of memory dies to electrically couple the memory controller to the communication component, wherein the first through-stack interconnects are configured to transmit (a) the plurality of input data streams from the communication component to the memory controller and (b) a plurality of output data streams from the memory controller to the communication component;
forming a plurality of second through-stack interconnects through the entire stack of memory dies to electrically couple the second logic die to the circuit component;
coupling a wall portion of a thermally conductive casing to the peripheral portion of the first logic die; and
coupling a cap portion of the thermally conductive casing to the second logic die.
14. The method of claim 13 wherein the second logic die includes a bulk portion of a semiconductor substrate, and wherein coupling the cap portion of the thermally conductive casing to the second logic die includes coupling the cap portion to the bulk portion.
15. The method of claim 13 wherein the method does not include forming through-die interconnects through the second logic die.
16. The method of claim 13 wherein the method further includes forming a plurality of third through-stack interconnects (a) through the entire stack of memory dies and (b) to be functionally isolated from the communication component and the circuit component.
17. The method of claim 16 wherein forming the plurality of third through-stack interconnects includes forming the third through-stack interconnects to be functionally isolated from the memory dies.
18. The method of claim 13 wherein the method further includes forming a plurality of thermally conductive dummy elements interstitially between the first through-stack interconnects.
19. The method of claim 13 wherein the method further includes forming a plurality of third through-stack interconnects at least partially through the stack of memory dies to electrically couple each of the memory dies to the memory controller.
20. A semiconductor die assembly, comprising:
a first logic die including a memory controller, wherein the first logic die includes a bulk portion of a semiconductor substrate;
a second logic die including—
a central portion beneath a footprint of the first logic die;
a peripheral portion extending beyond the footprint of the first logic die;
a circuit component disposed in the central portion, wherein the circuit component is a clock circuit or a power distribution component; and
a communication component disposed in the peripheral portion and configured to deserialize serial input data into a plurality of input data streams, wherein the circuit component has a lower operating temperature than the communication component;
a stack of memory dies positioned on the second logic die, wherein the first logic die is positioned on the stack of memory dies;
a plurality of first through-stack interconnects extending through the entire stack of memory dies to couple the memory controller to the communication component, wherein the first through-stack interconnects are configured to transmit (a) the plurality of input data streams from the communication component to the memory controller and (b) a plurality of output data streams from the memory controller to the communication component;
a plurality of second through-stack interconnects extending through the entire stack of memory dies to couple the first logic die to the circuit component;
a plurality of third through-stack interconnects extending at least partially through the stack of memory dies, wherein each of the memory dies is coupled to the memory controller via one or more of the third through-stack interconnects; and
a thermally conductive casing having a cap portion and a wall portion extending from the cap portion, wherein the wall portion is attached to the peripheral portion of the second logic die and configured to dissipate heat from the communication component during operation, and wherein the cap portion is attached to the bulk portion of the first logic die to dissipate heat from the memory controller and the stack of memory dies during operation.