Group 5 transition metal-containing compounds for vapor deposition of group 5 transition metal-containing films
Disclosed are Group 5 transition metal-containing thin film forming precursors. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 5 transition metal-containing thin films on one or more substrates via vapor deposition processes.
1. A Group 5 transition metal-containing thin film forming precursor having one of the following formulae:
wherein the Group 5 transition metal-containing thin film forming precursor is tert-butylimidobis(diethylamido)mono(tert-butylalkoxo)Niobium(V) or tert-butylimidomono(diethylamido)bis(tert-butylalkoxo)Niobium(V).
2. The Group 5 transition metal-containing thin film forming precursor of claim 1 , wherein the Group 5 transition metal-containing thin film forming precursor is tert-butylimidobis(diethylamido)mono(tert-butylalkoxo)Niobium(V).
3. The Group 5 transition metal-containing thin film forming precursor of claim 1 , wherein the Group 5 transition metal-containing thin film forming precursor is tert-butylimidomono(diethylamido)bis(tert-butylalkoxo)Niobium(V).
4. A process for the deposition of a Group 5 transition metal-containing film on a substrate, comprising the steps of: introducing the vapor of the Group 5 transition metal-containing thin film forming precursor into a reactor having a substrate disposed therein and depositing at least part of the Group 5 transition metal-containing compound onto the substrate, the Group 5 transition metal-containing thin film forming precursor having one of the following formulae:
wherein the Group 5 transition metal-containing thin film forming precursor is tert-butylimidobis(diethylamido)mono(tert-butylalkoxo)Niobium(V) or tert-butylimidomono(diethylamido)bis(tert-butylalkoxo)Niobium(V).
5. The process of claim 4 , further comprising introducing at least one reactant into the reactor.
6. The process of claim 5 , wherein the reactant is selected from the group consisting of H 2 , H 2 CO N 2 H 4 , NH 3 , SiH 4 , Si 2 H 6 , Si 3 H 8 , SiH 2 Me 2 , SiH 2 Et 2 , N(SiH 3 ) 3 , hydrogen radicals thereof, and mixtures thereof.
7. The process of claim 5 , wherein the reactant is selected from the group consisting of: O 2 , O 3 , H 2 O, H 2 O 2 NO, N 2 O, NO 2 , oxygen radicals thereof, and mixtures thereof.
8. The process of claim 5 , wherein the Group 5 transition metal-containing thin film forming precursor and the reactant are introduced into the reactor simultaneously and the reactor is configured for chemical vapor deposition.
9. The process of claim 5 , wherein the Group 5 transition metal-containing thin film forming precursor and the reactant are introduced into the reactor sequentially and the reactor is configured for atomic layer deposition.
10. The process of claim 5 , wherein the substrate is zirconium oxide (ZrO 2 ).
11. The process of claim 5 , wherein the Group 5 transition metal-containing thin film forming precursor is tert-butylimidobis(diethylamido)mono(tert-butylalkoxo)Niobium(V).
12. The process of claim 5 , wherein the Group 5 transition metal-containing thin film forming precursor is tert-butylimidomono(diethylamido)bis(tert-butylalkoxo)Niobium(V).