Organometallic adduct compound and method of manufacturing integrated circuit device by using the same
An organometallic adduct compound and a method of manufacturing an integrated circuit device, the organometallic adduct compound being represented by General Formula (I):
1 . An organometallic adduct compound represented by General Formula (I):
wherein, in General Formula (I),
R 1 , R 2 , R 3 , R 4 , and R 5 are each independently
a hydrogen atom,
a halogen atom,
a substituted or unsubstituted C1 to C5 linear alkyl group,
a substituted or unsubstituted C3 to C5 branched alkyl group,
a substituted or unsubstituted C2 to C5 linear alkenyl group, or
a substituted or unsubstituted C3 to C5 branched alkenyl group,
at least one of R 1 , R 2 , R 3 , R 4 , and R 5 is
a fluorine atom,
a fluorine atom-substituted C1 to C5 linear alkyl group,
a fluorine atom-substituted C3 to C5 branched alkyl group,
a fluorine atom-substituted C2 to C5 linear alkenyl group, or
a fluorine atom-substituted C3 to C5 branched alkenyl group
X is a halogen atom, and
M is a niobium atom or a tantalum atom.
2 . The organometallic adduct compound as claimed in claim 1 , wherein at least one of R 1 , R 2 , R 3 , R 4 , and R 5 is a fluorine atom.
3 . The organometallic adduct compound as claimed in claim 1 , wherein at least one of R 1 and R 2 is a fluorine atom.
4 . The organometallic adduct compound as claimed in claim 1 , wherein:
M is a niobium atom, and
at least one of R 1 , R 2 , R 3 , R 4 , and R 5 is a fluorine atom.
5 . The organometallic adduct compound as claimed in claim 1 , wherein:
X is a fluorine atom or a chlorine atom,
M is a niobium atom, and
at least one of R 1 , R 2 , R 3 , R 4 , and R 5 is a fluorine atom.
6 . The organometallic adduct compound as claimed in claim 1 , wherein:
M is a niobium atom.
7 . The organometallic adduct compound as claimed in claim 1 , wherein:
X is a fluorine atom or a chlorine atom, and
at least one of R 1 , R 2 , R 3 , R 4 , and R 5 includes a fluorine atom.
8 . The organometallic adduct compound as claimed in claim 1 , wherein:
X is a fluorine atom.
9 . A method of manufacturing an integrated circuit device, the method comprising forming a metal-containing film on a substrate by using an organometallic adduct compound represented by General Formula (I):
wherein, in General Formula (I),
R 1 , R 2 , R 3 , R 4 , and R 5 are each independently
a hydrogen atom,
a halogen atom,
a substituted or unsubstituted C1 to C5 linear alkyl group,
a substituted or unsubstituted C3 to C5 branched alkyl group,
a substituted or unsubstituted C2 to C5 linear alkenyl group, or
a substituted or unsubstituted C3 to C5 branched alkenyl group,
at least one of R 1 , R 2 , R 3 , R 4 , and R 5 is
a fluorine atom,
a fluorine atom-substituted C1 to C5 linear alkyl group,
a fluorine atom-substituted C3 to C5 branched alkyl group,
a fluorine atom-substituted C2 to C5 linear alkenyl group, or
a fluorine atom-substituted C3 to C5 branched alkenyl group
X is a halogen atom, and
M is a niobium atom or a tantalum atom.
10 . The method as claimed in claim 9 , wherein, in General Formula (I), at least one of R 1 , R 2 , R 3 , R 4 , and R 5 is a fluorine atom.
11 . The method as claimed in claim 9 , wherein, in General Formula (I), at least one of R 1 and R 2 is a fluorine atom.
12 . The method as claimed in claim 9 , wherein, in General Formula (I):
X is a fluorine atom or a chlorine atom,
M is a niobium atom, and
at least one of R 1 , R 2 , R 3 , R 4 , and R 5 is a fluorine atom.
13 . The method as claimed in claim 9 , wherein forming the metal-containing film includes:
supplying the organometallic adduct compound represented by General Formula (I) onto the substrate; and
supplying a reactive gas onto the substrate.
14 . The method as claimed in claim 13 , wherein the reactive gas includes NH 3 , N 2 plasma, an organic amine compound, a hydrazine compound, or a combination thereof.
15 . The method as claimed in claim 9 , wherein, in General Formula (I):
M is a niobium atom, and
forming the metal-containing film includes forming an NbN film.
16 . An organometallic adduct compound represented by General Formula (I):
wherein, in General Formula (I),
R 1 , R 2 , R 3 , R 4 , and R 5 are each independently
a hydrogen atom,
a halogen atom,
a substituted or unsubstituted C1 to C5 linear alkyl group,
a substituted or unsubstituted C3 to C5 branched alkyl group,
a substituted or unsubstituted C2 to C5 linear alkenyl group, or
a substituted or unsubstituted C3 to C5 branched alkenyl group,
at least one of R 1 , R 2 , R 3 , R 4 , and R 5 is a halogen atom,
X is a halogen atom, and
M is a niobium atom or a tantalum atom.