Granted Patent B2

US 12,473,309 · App. 17/346,400 · Granted Nov 18, 2025

Inventors: Seungmin Ryu (Hwaseong-si, KR); Younsoo Kim (Yongin-si, KR); Gyuhee Park (Hwaseong-si, KR); Younjoung Cho (Hwaseong-si, KR); Yutaro Aoki (Tokyo, JP); Wakana Fuse (Tokyo, JP); Kazuki Harano (Tokyo, JP); Takanori Koide (Tokyo, JP); Yoshiki Manabe (Tokyo, JP); Kazuya Saito (Tokyo, JP); Hiroyuki Uchiuzou (Tokyo, JP)

Assignee: ADEKA CORPORATION

C07F9/005C23C16/34C23C16/45536C23C16/45557H10K71/166H10K85/30

Abstract

Claims (43)

1 . An organometallic compound represented by Formula (I),

wherein, in Formula (I), M is a tantalum atom; or a vanadium atom, R 1 is a C1-C5 straight-chain alkyl group or a C3-C5 branched alkyl group, R 2 and R 3 are each independently a C1-C8 straight-chain alkyl group or a C3-C8 branched alkyl group, at least one of R 2 and R 3 being substituted with at least six fluorine atom, R 4 is a C1-C10 straight-chain alkyl group or a C3-C10 branched alkyl group, and n is an integer of 0 to 5, and

wherein the organometallic compound is a liquid at a temperature of about 20° C. at an atmospheric pressure.

2 . The organometallic compound as claimed in claim 1 , wherein, in Formula (I),

n is 0 or 1, and

when n is 1, R 1 is a methyl group or an ethyl group.

3 . The organometallic compound as claimed in claim 1 ,

wherein, in Formula (I), R 2 and R 3 are each independently a C1-C8 straight-chain perfluoroalkyl group or a C3-C5 branched perfluoroalkyl group.

4 . The organometallic compound as claimed in claim 1 ,

wherein, in Formula (I), at least one of R 2 and R 3 is a C3-C5 branched perfluoroalkyl group.

5 . An organometallic compound represented by Formula (I),

wherein, in Formula (I), M is a niobium atom,

n is 0,

R 2 and R 3 are each independently a hexafluoroisopropyl group or a nonafluoro tert-butyl group, and

R 4 is a C1-C10 straight-chain alkyl group or a C3-C10 branched alkyl group, and

wherein the organometallic compound is a liquid at a temperature of about 20° C. at an atmospheric pressure.

6 . The organometallic compound as claimed in claim 1 ,

wherein, in Formula (I), R 4 is a C3-C8 branched alkyl group.

7 . The organometallic compound as claimed in claim 1 ,

wherein, in Formula (I), R 4 is an isopropyl group, a sec-butyl group, a tert-butyl group, a tert-pentyl group, or a tert-octyl group.

8 . The organometallic compound as claimed in claim 1 ,

wherein, in Formula (I), M is a tantalum atom.

9 . The organometallic compound as claimed in claim 1 ,

wherein, in Formula (I), M is a tantalum atom, R 1 is a methyl group or an ethyl group, R 2 and R 3 are each independently a C1-C8 straight-chain perfluoroalkyl group or a C3-C5 branched perfluoroalkyl group, R 4 is a C3-C8 branched alkyl group, and n is 0 or 1.

10 . A method of manufacturing an integrated circuit (IC) device, the method comprising forming a metal-containing film on a substrate by using an organometallic compound represented by Formula (I):

wherein, in Formula (I), M is a niobium atom, n is 0, R 2 and R 3 are each independently a hexafluoroisopropyl group or a nonafluoro tert-butyl group, and R 4 is a C1-C10 straight-chain alkyl group or a C3-C10 branched alkyl group, and

wherein the organometallic compound is a liquid at a temperature of about 20° C. at an atmospheric pressure.

11 . The method as claimed in claim 10 ,

wherein forming the metal-containing film includes:

supplying the organometallic compound of Formula (I) onto the substrate; and

supplying a reactive gas onto the substrate.

12 . The method as claimed in claim 11 ,

wherein the reactive gas includes a nitriding gas, the nitriding gas including NH 3 , N 2 plasma, an organic amine compound, a hydrazine compound, or a combination thereof.

13 . The method as claimed in claim 11 ,

wherein the reactive gas includes an oxidizing gas, the oxidizing gas including O 2 , O 3 , O 2 plasma, H 2 O, NO 2 , NO, nitrous oxide (N 2 O), CO, CO 2 , H 2 O 2 , HCOOH, CH 3 COOH, (CH 3 CO) 2 O, an alcohol, a peroxide, sulfur oxide, or a combination thereof.

14 . The organometallic compound as claimed in claim 5 ,

wherein, in Formula (I), R 4 is a C3-C8 branched alkyl group.

15 . The organometallic compound as claimed in claim 5 ,

wherein, in Formula (I), R 4 is an isopropyl group, a sec-butyl group, a tert-butyl group, a tert-pentyl group, or a tert-octyl group.

16 . The method as claimed in claim 10 ,

wherein, in Formula (I), R 4 is a C3-C8 branched alkyl group.

17 . The method as claimed in claim 10 ,

wherein, in Formula (I), R 4 is an isopropyl group, a sec-butyl group, a tert-butyl group, a tert-pentyl group, or a tert-octyl group.

Assignments (1)

Priority Claims (2)

Continuity (1)

References Cited (24)