Removing polysilicon

1. A method, comprising:

forming a first instance of oxide;

forming an instance of polysilicon over the instance of oxide;

forming a second instance of oxide over the instance of polysilicon;

forming an opening through the second instance of oxide, the instance of polysilicon and the first instance of oxide;

exposing the second instance of oxide, the instance of polysilicon and the first instance of oxide to an aqueous composition; and

using the aqueous composition, recessing the instance of polysilicon relative to the first instance of oxide and the second instance of oxide within the opening;

wherein the aqueous composition comprises nitric acid, poly-carboxylic acid and ammonium fluoride.

2. The method of claim 1 , further comprising using the aqueous composition comprising a water content of less than or equal to 39 wt %.

3. The method of claim 2 , further comprising using the aqueous composition comprising a water content of less than or equal to 35 wt %.

4. The method of claim 1 , further comprising using the aqueous composition comprising 65-70 wt % nitric acid, 0.06-0.6 wt % ammonium fluoride, and poly-carboxylic acid at 0.4 wt % or less.

5. The method of claim 4 , further comprising using the aqueous composition, wherein the poly-carboxylic acid is oxalic acid.

6. The method of claim 4 , further comprising using the aqueous composition further comprising hydrofluoric acid.

7. The method of claim 6 , further comprising using the aqueous composition comprising hydrofluoric acid at 0.08 wt % or less.

8. The method of claim 7 , further comprising using the aqueous composition, wherein the poly-carboxylic acid is oxalic acid.

9. The method of claim 1 , wherein forming the instance of polysilicon comprises forming an instance of boron-doped polysilicon.

10. The method of claim 9 , wherein forming the second instance of oxide comprises forming an instance of a silicon oxide or a silicon oxynitride.