System and method for temperature control in plasma processing system
Techniques herein include systems and methods for fine control of temperature distribution across a substrate. Such techniques can be used to provide uniform spatial temperature distribution, or a biased spatial temperature distribution to improve plasma processing of substrates and/or correct characteristics of a given substrate. Embodiments include a plasma processing system with temperature control. Temperature control systems herein include a primary heating mechanism to heat a substrate, and a secondary heating mechanism that precisely modifies spatial temperature distribution across a substrate being processed. At least one heating mechanism includes a digital projection system configured to project a pattern of electromagnetic radiation onto or into a substrate, or through the substrate and onto a substrate support assembly. The digital projection system is configured to spatially and dynamically adjust the pattern of electromagnetic radiation and selectively augment heating of the substrate by each projected point location.
1. A plasma processing system with temperature control, the plasma processing system comprising:
a processing chamber;
a gas delivery system configured to deliver one or more process gasses to a substrate processing region of the processing chamber;
a substrate support assembly configured to support a substrate in the substrate processing region during plasma processing;
a plasma generator coupled to the processing chamber and configured to generate plasma in the substrate processing region;
a first heating mechanism positioned within the substrate support assembly and configured to heat the substrate when supported on the substrate support assembly; and
a second heating mechanism comprising a digital projection system configured to project a pattern of electromagnetic radiation through the substrate and onto the substrate support assembly, the digital projection system configured to spatially and dynamically adjust the pattern of electromagnetic radiation, the digital projection system configured to project the pattern of electromagnetic radiation within a predetermined wavelength range of electromagnetic radiation that passes through semiconductor material as transparent, the substrate support assembly comprising an absorption material that absorbs electromagnetic radiation within the predetermined wavelength range of electromagnetic radiation to spatially and selectively augment heating of the substrate by each projected point location.
2. The plasma processing system of claim 1 , wherein the predetermined wavelength range of electromagnetic radiation is infrared.
3. The plasma processing system of claim 2 , wherein the predetermined wavelength range of electromagnetic radiation is an infrared range of 1080 nanometers to 3 microns.
4. The plasma processing system of claim 1 , wherein the digital projection system is configured to create more than one hundred temperature adjustment regions per centimeter squared of the substrate support assembly.
5. The plasma processing system of claim 1 , wherein the pattern of electromagnetic radiation is projected through a window of the processing chamber.
6. The plasma processing system of claim 5 , wherein the pattern of electromagnetic radiation is projected through two or more windows of the processing chamber.
7. The plasma processing system of claim 6 , wherein the digital projection system is configured to have a line-of-sight of at least half of the substrate through the two or more windows.
8. The plasma processing system of claim 6 , wherein the digital projection system is configured to project the pattern of electromagnetic radiation through a shower head assembly positioned facing the substrate support assembly.
9. The plasma processing system of claim 5 , wherein the window is positioned on a ceiling of the processing chamber.
10. The plasma processing system of claim 1 , wherein the digital projection system is configured to project the pattern of electromagnetic radiation towards a reflection surface in the processing chamber opposite the substrate that reflects electromagnetic radiation onto the substrate support assembly.
11. The plasma processing system of claim 1 , wherein the digital projection system is configured to project the pattern of electromagnetic radiation, based on a critical dimension signature of the substrate.
12. The plasma processing system of claim 1 , wherein the first heating mechanism includes a fluid circulator that circulates fluid within the substrate support assembly.
13. The plasma processing system of claim 1 , wherein the first heating mechanism includes one or more heaters configured to heat the substrate support assembly via electrical resistance.
14. The plasma processing system of claim 1 , wherein the digital projection system includes a laser galvanometer scanner.
15. A plasma processing system with temperature control, the plasma processing system comprising:
a processing chamber;
a gas delivery system configured to deliver one or more process gasses to a substrate processing region of the processing chamber;
a substrate support assembly configured to support a substrate in the substrate processing region during plasma processing;
a plasma generator coupled to the processing chamber and configured to generate plasma in the substrate processing region;
a first heating mechanism positioned within the substrate support assembly and configured to heat the substrate when supported on the substrate support assembly; and
a second heating mechanism comprising a digital projection system configured to project a pattern of electromagnetic radiation through micro-fabricated structures on a working surface of the substrate and into silicon material of the substrate, the digital projection system configured to spatially and dynamically adjust the pattern of electromagnetic radiation, the digital projection system configured to project the pattern of electromagnetic radiation within a predetermined wavelength range of electromagnetic radiation that passes through the micro-fabricated structures on the substrate as transparent, the substrate having the silicon material below the micro-fabricated structures that absorbs electromagnetic radiation within the predetermined wavelength range of electromagnetic radiation to spatially and selectively augment heating of the substrate by each projected point location.
16. The plasma processing system of claim 15 , wherein the predetermined wavelength range of electromagnetic radiation is infrared.
17. The plasma processing system of claim 16 , wherein the predetermined wavelength range of electromagnetic radiation is an infrared range of 750-800 nanometers.
18. A plasma processing system with temperature control, the plasma processing system comprising:
a processing chamber;
a gas delivery system configured to deliver one or more process gasses to a substrate processing region of the processing chamber;
a substrate support assembly configured to support a substrate in the substrate processing region during plasma processing;
a plasma generator coupled to the processing chamber and configured to generate plasma in the substrate processing region; and
a heating mechanism comprising a digital projection system configured to project a pattern of electromagnetic radiation through the substrate and onto the substrate support assembly, the digital projection system configured to spatially and dynamically adjust the pattern of electromagnetic radiation, the digital projection system configured to project the pattern of electromagnetic radiation within a predetermined wavelength range of electromagnetic radiation that passes through semiconductor material as transparent, the substrate support assembly comprising an absorption material that absorbs electromagnetic radiation within the predetermined wavelength range of electromagnetic radiation to spatially and selectively heat the substrate by each projected point location.
19. A plasma processing system with temperature control, the plasma processing system comprising:
a processing chamber;
a gas delivery system configured to deliver one or more process gasses to a substrate processing region of the processing chamber;
a substrate support assembly configured to support a substrate in the substrate processing region during plasma processing;
a plasma generator coupled to the processing chamber and configured to generate plasma in the substrate processing region; and
a heating mechanism comprising a digital projection system configured to project a pattern of electromagnetic radiation through micro-fabricated structures on a working surface of the substrate and into silicon material of the substrate, the digital projection system configured to spatially and dynamically adjust the pattern of electromagnetic radiation, the digital projection system configured to project the pattern of electromagnetic radiation within a predetermined wavelength range of electromagnetic radiation that passes through the micro-fabricated structures on the substrate as transparent, the substrate having the silicon material below the micro-fabricated structures that absorbs electromagnetic radiation within the predetermined wavelength range of electromagnetic radiation to spatially and selectively heat the substrate by each projected point location.