System and method for semiconductor structure
A method includes forming a first masking layer over a substrate, the first masking layer including a first mask line and a second mask line, heating respective top surfaces of the first mask line and the second mask line with polarized light, and forming a second masking layer over the first masking layer with an area selective deposition process. The second masking layer is thinner over a sidewall of the first mask line than over a top surface of the first mask line.
1 . A method for an area selective deposition process, the method comprising:
forming a first masking layer over a substrate, the first masking layer comprising a first mask line and a second mask line, wherein a trench between the first mask line and the second mask line has a first width;
in a plasma processing chamber, heating respective top surfaces of the first mask line and the second mask line with polarized light, wherein the first width is smaller than half a wavelength of the polarized light; and
in the plasma processing chamber, forming a second masking layer over the first masking layer with an area selective deposition process, wherein the second masking layer is thinner over a sidewall of the first mask line than over a top surface of the first mask line.
2 . The method of claim 1 , wherein the polarized light is linearly polarized.
3 . The method of claim 1 , wherein the polarized light is circularly polarized.
4 . The method of claim 1 , wherein the polarized light enters the plasma processing chamber through a top surface of the plasma processing chamber.
5 . The method of claim 1 , wherein the polarized light enters the plasma processing chamber through a sidewall of the plasma processing chamber.
6 . The method of claim 1 , wherein the polarized light is projected into the plasma processing chamber by a digital light projection system.
7 . The method of claim 1 , wherein a temperature of the respective top surfaces of the first mask line and the second mask line is higher than a temperature of a bottom surface of the trench after heating the respective top surfaces of the first mask line and the second mask line with polarized light.
8 . A method for manufacturing a semiconductor structure, the method comprising:
placing a substrate into a plasma processing chamber, a patterned first masking layer being over a target layer of the substrate;
bombarding the patterned first masking layer with linearly polarized light, wherein a polarization direction of the linearly polarized light is aligned with a pattern of trenches through the patterned first masking layer;
performing a first area selective deposition of a second masking layer over the patterned first masking layer;
patterning the target layer using the second masking layer and the patterned first masking layer as an etching mask; and
forming a pattern between remaining portions of the target layer.
9 . The method of claim 8 , further comprising, partially through an etch process to pattern the target layer, bombarding the substrate with linearly polarized light and performing a second area selective deposition of the second masking layer.
10 . The method of claim 8 , wherein the first area selective deposition forms a greater proportion of material over top surfaces of the patterned first masking layer than over sidewalls of the patterned first masking layer.
11 . The method of claim 8 , wherein the plasma processing chamber is part of an inductively coupled plasma processing system.
12 . The method of claim 8 , wherein the plasma processing chamber is part of a capacitively coupled plasma processing system.
13 . The method of claim 8 , wherein the linearly polarized light is produced by a pulsed laser generator.
14 . A method for manufacturing a semiconductor structure, the method comprising:
forming a first masking layer over a target layer, the target layer being over a substrate, the first masking layer comprising a first mask line and a second mask line, wherein a trench between the first mask line and the second mask line has a first width;
placing the substrate into a plasma processing chamber;
heating respective top surfaces of the first mask line and the second mask line with polarized light, the first width being smaller than half a wavelength of the polarized light;
performing a first area selective deposition of a second masking layer over the first masking layer;
patterning the target layer using the second masking layer and the first masking layer as an etching mask; and
forming a pattern between remaining portions of the target layer.
15 . The method of claim 14 , wherein the polarized light is linearly polarized.
16 . The method of claim 15 , wherein a polarization direction of the polarized light is aligned with the trench.
17 . The method of claim 14 , wherein the polarized light is circularly polarized.
18 . The method of claim 14 , wherein the second masking layer is thinner over a sidewall of the first mask line than over a top surface of the first mask line.
19 . The method of claim 14 , wherein the polarized light enters the plasma processing chamber through a top surface of the plasma processing chamber.
20 . The method of claim 14 , wherein the polarized light enters the plasma processing chamber through a sidewall of the plasma processing chamber.