Interconnect structure and method
In an embodiment, a device includes: an interconnect structure over a substrate, the interconnect structure including a first metal line and a second metal line, the first metal line longer than the second metal line; a surface dielectric layer over the interconnect structure; a plurality of first vias in the surface dielectric layer; a first bonding pad in the surface dielectric layer, where the first bonding pad is connected to a first end of the first metal line through the first vias; a plurality of second vias in the surface dielectric layer; a second bonding pad in the surface dielectric layer, the second bonding pad and the first bonding pad separate from each other, where the second bonding pad is connected to a second end of the first metal line through the second vias; and a third bonding pad in the surface dielectric layer, where the third bonding pad is connect to the second metal line through a third via.
1. A device comprising:
an interconnect structure over a substrate, the interconnect structure comprising a first metal line and a second metal line, the first metal line longer than the second metal line;
a surface dielectric layer over the interconnect structure;
a plurality of first vias in the surface dielectric layer;
a first bonding pad in the surface dielectric layer, wherein the first bonding pad is connected to a first end of the first metal line through the first vias;
a plurality of second vias in the surface dielectric layer;
a second bonding pad in the surface dielectric layer, the second bonding pad and the first bonding pad separate from each other, wherein the second bonding pad is connected to a second end of the first metal line through the second vias; and
a third bonding pad in the surface dielectric layer, wherein the third bonding pad is connected to the second metal line through a third via.
2. The device of claim 1 , wherein the first vias are spaced apart by a first pitch, the second vias are spaced apart by a second pitch, and the third via is spaced apart from adjacent vias by a third pitch, and wherein the first pitch, the second pitch, and the third pitch are equal.
3. The device of claim 1 , wherein the third bonding pad is connect to the second metal line with only the third via.
4. The device of claim 1 , wherein the first metal line is a dummy line.
5. The device of claim 1 , wherein the first metal line has a first length, the second metal line has a second length, and the first length is ten times the second length.
6. The device of claim 1 , wherein the first metal line is greater than 800 μm in length, and the second metal line is less than 800 μm in length.
7. The device of claim 1 , further comprising:
a fourth bonding pad in the surface dielectric layer, wherein the fourth bonding pad is electrically isolated from the interconnect structure.
8. The device of claim 7 , wherein the first bonding pad, the second bonding pad, the third bonding pad, and the fourth bonding pad are spaced apart by a same pitch.
9. The device of claim 1 , wherein the first bonding pad and the second bonding pad comprise openings extending through the first bonding pad and the second bonding pad.
10. A method comprising:
forming a first metal line in a first interconnect structure;
depositing a surface dielectric layer over the first interconnect structure;
etching a first bonding pad opening in the surface dielectric layer over a first end of the first metal line;
etching a second bonding pad opening in the surface dielectric layer over a second end of the first metal line;
etching a plurality of via openings in the surface dielectric layer, a first subset of the via openings extending from a bottom of the first bonding pad opening to the first metal line, a second subset of the via openings extending from a bottom of the second bonding pad opening to the first metal line; and
filling the via openings, the first bonding pad opening, and the second bonding pad with a conductive material.
11. The method of claim 10 , further comprising:
planarizing the conductive material such that a surface of the surface dielectric layer is level with top surfaces of the conductive material.
12. The method of claim 10 , further comprising:
forming a second metal line in the first interconnect structure, the first metal line longer than the second metal line.
13. The method of claim 12 , further comprising:
etching a third bonding pad opening in the surface dielectric layer over the second metal line, wherein a third subset of the via openings extending from a bottom of the third bonding pad opening to the second metal line; and
filling the third bonding pad opening with the conductive material.
14. The method of claim 12 , wherein the first metal line is greater than 800 μm in length, and the second metal line is less than 800 μm in length.
15. The method of claim 10 , wherein each of the vias openings are spaced apart a same pitch.
16. The method of claim 10 , further comprising:
bonding a first package component to the surface dielectric layer, the first bonding pad, and the second bonding pad.
17. The method of claim 10 , further comprising:
bonding a first package component to the surface dielectric layer and the first bonding pad; and
bonding a second package component to the surface dielectric layer and the second bonding pad, the first package component and the second package component being laterally spaced apart.
18. A method comprising:
depositing an inter-layer dielectric (ILD) over a substrate;
forming contact plugs in the ILD;
depositing an inter-metal dielectric (IMD) over the contact plugs;
forming a metal line in the IMD, the metal line having a first pad at a first end and a second pad at a second end;
depositing a surface dielectric layer over the metal line; and
forming a plurality of vias in the surface dielectric layer, a first subset of the vias electrically connected to the first pad of the metal line, a second subset of the vias electrically connected to the second pad of the metal line.
19. The method of claim 18 , further comprising:
forming a first bonding pad in the surface dielectric layer, wherein the first bonding pad is connected to the first pad of the metal line through the first subset of the vias; and
forming a second bonding pad in the surface dielectric layer, wherein the second bonding pad is connected to the second pad of the metal line through the second subset of the vias.
20. The method of claim 18 , further comprising:
forming a plurality of bonding pads in the surface dielectric layer, wherein a first subset of the plurality of bonding pads are connected to the first pad of the metal line through the first subset of the vias, and wherein a second subset of the plurality of bonding pads are connected to the second pad of the metal line through the second subset of the vias.