Bonding alignment marks at bonding interface
Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a bonded structure includes a first bonding layer including a first bonding contact and a first bonding alignment mark, a second bonding layer including a second bonding contact and a second bonding alignment mark, and a bonding interface between the first bonding layer and the second bonding layer. The first bonding alignment mark is aligned with the second bonding alignment mark at the bonding interface, such that the first bonding contact is aligned with the second bonding contact at the bonding interface. The first bonding alignment mark includes a plurality of first repetitive patterns. The second bonding alignment mark includes a plurality of second repetitive patterns different from the plurality of first repetitive patterns.
1 . A bonded structure, comprising:
a first bonding layer comprising a first bonding contact and a first bonding alignment mark;
a second bonding layer comprising a second bonding contact and a second bonding alignment mark; and
a bonding interface between the first bonding layer and the second bonding layer,
wherein the first bonding alignment mark is aligned with the second bonding alignment mark at the bonding interface, such that the first bonding contact is aligned with the second bonding contact at the bonding interface;
the first bonding alignment mark comprises a plurality of first repetitive patterns, each of the plurality of first repetitive patterns comprises a plurality of metal strips separated by a plurality of dielectric regions;
the second bonding alignment mark comprises a plurality of second repetitive patterns different from the plurality of first repetitive patterns; and
a first metallic portion of the first bonding alignment mark is in contact with a second metallic portion of the second bonding alignment mark at the bonding interface.
2 . The bonded structure of claim 1 , wherein the plurality of first repetitive patterns are repetitive strips and the plurality of second repetitive patterns are repetitive squares.
3 . The bonded structure of claim 2 , wherein the repetitive strips of the plurality of first repetitive patterns and the repetitive squares of the plurality of second repetitive patterns are at least partially overlapped in a plan view, and a size of an overlapped area of the repetitive strips and the repetitive squares is used as a bonding alignment control.
4 . The bonded structure of claim 1 , wherein a size of the plurality of metal strips is not greater than about 25% of a size of the first respective repetitive pattern.
5 . The bonded structure of claim 1 , wherein each of the second repetitive patterns comprises a dielectric region and a metal region separated by adjacent dielectric regions, and a size of the metal region is not greater than about 25% of a size of the second respective repetitive pattern.
6 . The bonded structure of claim 1 , wherein a dimension of each first repetitive pattern and each second repetitive pattern in a plan view is not greater than 1 μm.
7 . The bonded structure of claim 6 , wherein a length of a side of each first repetitive pattern is not greater than 1 μm.
8 . A bonded structure, comprising:
a first bonding layer comprising a first bonding contact, a first bonding alignment mark, and a first dielectric;
a second bonding layer comprising a second bonding contact, a second bonding alignment mark, and a second dielectric; and
a bonding interface between the first bonding layer and the second bonding layer,
wherein the first bonding alignment mark is aligned with the second bonding alignment mark at the bonding interface, such that the first bonding contact is aligned with the second bonding contact at the bonding interface;
the first bonding alignment mark comprises a plurality of first repetitive patterns, each of the first repetitive patterns comprises a dielectric region and a plurality of metal strips separated by adjacent dielectric regions;
a size of the plurality of metal strips is not greater than about 25% of a size of the first respective repetitive pattern; and
a first metallic portion of the first bonding alignment mark is in contact with a second metallic portion of the second bonding alignment mark at the bonding interface.
9 . The bonded structure of claim 8 , wherein a dimension of each first repetitive pattern is not greater than 1 μm.
10 . The bonded structure of claim 9 , wherein the dimension of each first repetitive pattern in a plan view is not greater than 1 μm.
11 . The bonded structure of claim 9 , wherein a length of a side of each first repetitive pattern is not greater than 1 μm.
12 . The bonded structure of claim 8 , wherein the second bonding alignment mark comprises a plurality of second repetitive patterns.
13 . The bonded structure of claim 12 , wherein the plurality of first repetitive patterns are repetitive strips and the plurality of second repetitive patterns are repetitive squares.
14 . The bonded structure of claim 13 , wherein the repetitive strips of the plurality of first repetitive patterns and the repetitive squares of the plurality of second repetitive patterns are at least partially overlapped in a plan view, and a size of an overlapped area of the repetitive strips and the repetitive squares is used as a bonding alignment control.
15 . A semiconductor device, comprising:
a first semiconductor structure comprising a substrate, a first device layer disposed on the substrate, and a first bonding layer disposed above the first device layer and comprising a first bonding contact and a first bonding alignment mark;
a second semiconductor structure comprising a second device layer, and a second bonding layer disposed below the second device layer and comprising a second bonding contact and a second bonding alignment mark; and
a bonding interface between the first semiconductor structure and the second semiconductor structure,
wherein the first bonding alignment mark is aligned with the second bonding alignment mark at the bonding interface, such that the first bonding contact is aligned with the second bonding contact at the bonding interface;
the first bonding alignment mark comprises a plurality of first repetitive patterns, each of the first repetitive patterns comprises a dielectric region and a plurality of metal strips separated by adjacent dielectric regions; and
a size of the plurality of metal strips is not greater than about 25% of a size of the first respective repetitive pattern; and
a first metallic portion of the first bonding alignment mark is in contact with a second metallic portion of the second bonding alignment mark at the bonding interface.
16 . The semiconductor device of claim 15 , wherein a dimension of each first repetitive pattern is not greater than 1 μm.
17 . The semiconductor device of claim 16 , wherein the dimension of each first repetitive pattern in a plan view is not greater than 1 μm.
18 . The semiconductor device of claim 16 , wherein a length of a side of each first repetitive pattern is not greater than 1 μm.
19 . The semiconductor device of claim 15 , wherein the second bonding alignment mark comprises a plurality of second repetitive patterns, and the plurality of first repetitive patterns are repetitive strips and the plurality of second repetitive patterns are repetitive squares.
20 . The semiconductor device of claim 19 , wherein the repetitive strips of the plurality of first repetitive patterns and the repetitive squares of the plurality of second repetitive patterns are at least partially overlapped in a plan view, and a size of an overlapped area of the repetitive strips and the repetitive squares is used as a bonding alignment control.