Photonic lock based high bandwidth photodetector
The technique introduced herein decouples the traditional relationship between bandwidth and responsivity, thereby providing a more flexible and wider photodetector design space. In certain embodiments of the technique introduced here, a photodetector device includes a first mirror, a second mirror, and a light absorption region positioned between the first and second reflective mirrors. For example, the first mirror can be a partial mirror, and the second mirror can be a high-reflectivity mirror. The light absorption region is positioned to absorb incident light that is passed through the first mirror and reflected between the first and second mirrors. The first mirror can be configured to exhibit a reflectivity that causes an amount of light energy that escapes from the first mirror, after the light being reflected back by the second mirror, to be zero or near zero.
1. A cavity-based photodetector device comprising:
a first reflective region;
a second reflective region; and
a light absorption region containing silicon and positioned between the first and second reflective regions so as to absorb light passed through the first reflective region and reflected between the first and second reflective regions,
wherein the second reflective region includes a combination of a dielectric layer and a metal coating, the dielectric layer being positioned closer to the light absorption region than the metal coating,
wherein the combination increases the second reflective region's reflectivity as compared to a reflective region without the combination, and
wherein the second reflective region's reflectivity exceeds eighty percent (80%) when a wavelength of the light is above 950 nm.
2. The device of claim 1 , wherein (a) the first reflective region's reflectivity, (b) the second reflective region's reflectivity, and (c) an attenuation coefficient of the light absorption region are collectively configured such that the light resonates between the first and second reflective regions.
3. The device of claim 1 , wherein the first reflective region causes a total amount of light energy that escapes from the first reflective region to be less than 10% of incident light energy.
4. The device of claim 1 , wherein the first reflective region is such constructed that a reflectivity of the first reflective region is substantially equal to a one-circulation attenuation coefficient of the light absorption region, and wherein the one-circulation attenuation coefficient indicates a ratio of remainder light energy over entrance light energy in one circulation.
5. The device of claim 1 , wherein the first reflective region's reflectivity is less than a reflectivity of the second reflective region.
6. The device of claim 1 , further comprising:
a waveguide configured to pass the light through the first reflective region into the light absorption region.
7. The device of claim 1 , wherein the light absorption region comprises a light absorption material that is disposed on substantially the same planar surface as the first and second reflective regions.
8. The device of claim 1 , wherein the light absorption region comprises (a) a cavity layer disposed on substantially the same planar surface as the first and second reflective regions, and (b) a light absorption layer that is disposed over the cavity layer,
wherein the light absorption layer and the cavity layer are of different materials.
9. The device of claim 1 , wherein the first reflective region is disposed over the light absorption region, and wherein the light absorption region is disposed over the second reflective region.
10. The device of claim 1 , wherein the light absorption region comprises a photodiode or an avalanche photodiode layered structure.
11. The device of claim 1 , wherein the first and second reflective regions are selected from a group including: a distributed Bragg reflector (DBR), a metallic reflector, a corner mirror, and a reflection trench.
12. The device of claim 1 , wherein the light absorption region comprises a Group III-V compound, germanium, or a combination thereof.
13. The device of claim 1 , wherein the first reflective region is configured to cause a destructive interference upon light escaping from the first reflective region so as to reduce an amount of light that escapes from the first reflective region.
14. The device of claim 1 , wherein the first reflective region includes a layer of: oxide or nitride or any combination thereof.
15. The device of claim 1 , wherein the first reflective region includes a combination of a silicon layer and a dielectric layer, the silicon layer being positioned closer to the light absorption region than the dielectric layer.
16. The device of claim 15 , wherein the dielectric layer of the first reflective region is oxide.
17. The device of claim 1 , wherein the device is a resonant-cavity-enhanced photodetector.
18. The device of claim 1 , wherein the combination causes the second reflective region's reflectivity to exceed ninety percent (90%).
19. The device of claim 1 , wherein the increased reflectivity of the second reflective region increases responsivity of the device as compared to a device without the combination.
20. A cavity-based photodetector device comprising:
a first reflective region;
a second reflective region; and
a light absorption region containing silicon and positioned between the first and second reflective regions so as to absorb light passed through the first reflective region and reflected between the first and second reflective regions,
wherein the second reflective region includes a combination of a dielectric layer and a metal coating, the dielectric layer being positioned closer to the light absorption region than the metal coating,
wherein the combination causes the second reflective region's reflectivity to exceed ninety percent (90%), and
wherein the second reflective region's reflectivity exceeds eighty percent (80%) when a wavelength of the light is above 950 nm.