Semiconductor devices and methods of manufacturing the same
A semiconductor device includes a first insulating interlayer on a first region of a substrate and a second insulating interlayer on a second region of the substrate, a plurality of first wiring structures on the first insulating interlayer, the first wiring structures being spaced apart from each other, a plurality of second wiring structures filling a plurality of trenches on the second insulating interlayer, respectively, an insulation capping structure selectively on a surface of the first insulating interlayer between the first wiring structures and on a sidewall and an upper surface of each of the first wiring structures, the insulation capping structure including an insulating material, a third insulating interlayer on the first and second wiring structures, and an air gap among the first wiring structures under the third insulating interlayer.
1. A semiconductor device, comprising:
a first insulating interlayer on a first region of a substrate and a second insulating interlayer on a second region of the substrate;
a plurality of first wiring structures on the first insulating interlayer, the first wiring structures being spaced apart from each other;
a plurality of second wiring structures filling a plurality of trenches on the second insulating interlayer, respectively;
an insulation capping structure selectively only on a surface of the first insulating interlayer between the first wiring structures and on a sidewall and an upper surface of each of the first wiring structures, the insulation capping structure including an insulating material;
a third insulating interlayer on the first and second wiring structures; and
an air gap among the first wiring structures under the third insulating interlayer.
2. The semiconductor device as claimed in claim 1 , wherein the insulation capping structure includes an aluminum alloy.
3. The semiconductor device as claimed in claim 1 , wherein the insulation capping structure includes a second capping pattern and a third capping pattern, the second capping pattern being directly on the surface of the first insulating interlayer between the first wiring structures, and the third capping pattern being directly on the sidewall and the upper surface of each of the first wiring structures.
4. The semiconductor device as claimed in claim 3 , wherein the second capping pattern includes oxygen and a material included in the third capping pattern.
5. The semiconductor device as claimed in claim 1 , further comprising a first capping pattern including a conductive material on the second wiring structure.
6. The semiconductor device as claimed in claim 1 , further comprising a first capping mask covering the second insulating interlayer and the second wiring structure, the first capping mask including a material different from a material of the insulation capping structure.
7. The semiconductor device as claimed in claim 6 , further comprising a contact plug extending through the third insulating interlayer and the first capping mask, the contact plug being electrically connected with the second wiring structure.
8. The semiconductor device as claimed in claim 6 , further comprising a liner layer conformal on the insulation capping structure and the first capping mask.
9. The semiconductor device as claimed in claim 1 , wherein each of the first and second wiring structures includes a barrier pattern and a metal pattern including copper.
10. The semiconductor device as claimed in claim 1 , further comprising:
a fourth insulating interlayer on the third insulating interlayer; and
a plurality of third wiring structures in a plurality of trenches in the fourth insulating interlayer, respectively.
11. The semiconductor device as claimed in claim 10 , further comprising a plurality of fourth wiring structures on the fourth insulating interlayer, wherein each of the fourth wiring structures has an upper air gap at each of opposite sides thereof.
12. A semiconductor device, comprising:
a first insulating interlayer on a substrate;
a plurality of first wiring structures on the first insulating interlayer, the first wiring structures being spaced apart from each other;
an insulation capping structure selectively only on a surface of the first insulating interlayer between the first wiring structures and a sidewall and an upper surface of each of the first wiring structures, the insulation capping structure including an insulating material;
a second insulating interlayer on the first wiring structures; and
an air gap among the first wiring structures under the second insulating interlayer.
13. The semiconductor device as claimed in claim 12 , wherein the insulation capping structure includes an aluminum alloy.
14. The semiconductor device as claimed in claim 12 , further comprising a second wiring structure filling a trench on the first insulating interlayer.
15. The semiconductor device as claimed in claim 14 , further comprising a first capping pattern including a conductive material on the second wiring structure.
16. A semiconductor device, comprising:
a first insulating interlayer on a first region of a substrate and a second insulating interlayer on a second region of the substrate;
a plurality of first wiring structures on the first insulating interlayer, the first wiring structures being spaced apart from each other;
a plurality of second wiring structures filling a plurality of trenches on the second insulating interlayer, respectively;
an insulation capping structure only on the first region of the substrate, the insulation capping structure covering a surface of the first insulating interlayer between adjacent first wiring structures and sidewalls and upper surfaces of the first wiring structures, the insulation capping structure including an insulating material;
a third insulating interlayer on the first and second wiring structures; and
an air gap among the first wiring structures under the third insulating interlayer.
17. The semiconductor device as claimed in claim 16 , wherein the insulation capping structure covers all exposed surfaces of the first wiring structures and portions of an upper surface of the first insulating interlayer adjacent to first wiring structures, the insulation capping structure not being in the second region of the substrate.
18. The semiconductor device as claimed in claim 17 , wherein a bottom and at least one sidewall of the air gap is defined by the insulation capping structure, and a top of the air gap is defined by the third insulating interlayer.
19. The semiconductor device as claimed in claim 18 , wherein the air gap is only in the first region.
20. The semiconductor device as claimed in claim 16 , wherein:
the insulation capping structure is directly conformal on the first wiring structures and the first insulating interlayer between adjacent first wiring structures, and
a conductive capping pattern is positioned directly on the second wiring structures.