Semiconductor device and method for manufacturing the same
A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cm 2 and less than or equal to 1E16 molecules/cm 2 .
1. A semiconductor device comprising:
a first insulator over a substrate;
a first oxide insulator comprising indium over the first insulator;
an oxide semiconductor comprising indium in contact with the first oxide insulator;
a second oxide insulator comprising indium in contact with the oxide semiconductor;
a pair of conductors in contact with the second oxide insulator;
a third oxide insulator comprising at least one element other than oxygen included in the second oxide insulator in contact with the second oxide insulator and the pair of conductors;
a second insulator over the third oxide insulator;
a first conductor over the second insulator; and
a third insulator over the first conductor,
wherein a region in the second oxide insulator between the pair of conductors has a smaller thickness than regions in the second oxide insulator overlapping with the pair of conductors,
wherein an energy level of a conduction band minimum of each of the first oxide insulator and the second oxide insulator is closer to a vacuum level than an energy level of a conduction band minimum of the oxide semiconductor is,
wherein an energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than the energy level of the conduction band minimum of the second oxide insulator is.
2. The semiconductor device according to claim 1 ,
wherein part of the first conductor does not overlap with the pair of conductors.
3. The semiconductor device according to claim 1 ,
wherein the third oxide insulator comprises an element M (titanium, gallium, yttrium, zirconium, lanthanum, cerium, neodymium, tin, or hafnium), zinc, and oxygen.
4. The semiconductor device according to claim 1 ,
wherein the pair of conductors each have a stacked-layer structure, and
wherein an upper layer of each of the pair of conductors comprises one or more kinds of elements selected from silver, copper, ruthenium, iridium, platinum, and gold.
5. The semiconductor device according to claim 1 , further comprising:
a fourth conductor; and
a fourth insulator,
wherein the fourth conductor is formed over the substrate and below the first insulator,
wherein the fourth insulator is formed between the fourth conductor and the first insulator, and
wherein the fourth insulator is an oxide or a nitride comprising boron, aluminum, silicon, scandium, titanium, gallium, yttrium, zirconium, indium, lanthanum, cerium, neodymium, hafnium, or thallium.
6. The semiconductor device according to claim 1 ,
wherein the first oxide insulator, the oxide semiconductor, and the second oxide insulator each further comprise an element M (titanium, gallium, yttrium, zirconium, lanthanum, cerium, neodymium, tin, or hafnium), zinc, and oxygen.
7. The semiconductor device according to claim 1 ,
wherein the third insulator comprises oxygen and aluminum.
8. A semiconductor device comprising:
a first insulator over a substrate;
a first oxide insulator comprising indium over the first insulator;
an oxide semiconductor comprising indium in contact with the first oxide insulator;
a second oxide insulator comprising indium in contact with the oxide semiconductor;
a pair of conductors in contact with the second oxide insulator;
a third oxide insulator comprising at least one element other than oxygen included in the second oxide insulator in contact with the second oxide insulator and the pair of conductors;
a second insulator over the third oxide insulator;
a first conductor over the second insulator; and
a third insulator over the first conductor,
wherein a region in the second oxide insulator between the pair of conductors has a smaller thickness than regions in the second oxide insulator overlapping with the pair of conductors,
wherein an energy gap of each of the first oxide insulator and the second oxide insulator is larger than an energy gap of the oxide semiconductor,
wherein an energy gap of the third oxide insulator is larger than the energy gap of the second oxide insulator.
9. The semiconductor device according to claim 8 ,
wherein part of the first conductor does not overlap with the pair of conductors.
10. The semiconductor device according to claim 8 ,
wherein the third oxide insulator comprises an element M (titanium, gallium, yttrium, zirconium, lanthanum, cerium, neodymium, tin, or hafnium), zinc, and oxygen.
11. The semiconductor device according to claim 8 ,
wherein the pair of conductors each have a stacked-layer structure, and
wherein an upper layer of each of the pair of conductors comprises one or more kinds of elements selected from silver, copper, ruthenium, iridium, platinum, and gold.
12. The semiconductor device according to claim 8 , further comprising:
a fourth conductor; and
a fourth insulator,
wherein the fourth conductor is forming over the substrate and below the first insulator,
wherein the fourth insulator is formed between the fourth conductor and the first insulator, and
wherein the fourth insulator is an oxide or a nitride comprising boron, aluminum, silicon, scandium, titanium, gallium, yttrium, zirconium, indium, lanthanum, cerium, neodymium, hafnium, or thallium.
13. The semiconductor device according to claim 8 ,
wherein the first oxide insulator, the oxide semiconductor, and the second oxide insulator each further comprise an element M (titanium, gallium, yttrium, zirconium, lanthanum, cerium, neodymium, tin, or hafnium), zinc, and oxygen.
14. The semiconductor device according to claim 8 ,
wherein the third insulator comprises oxygen and aluminum.