IP Library › Granted Patent US 12,389,636
Granted Patent B2
US 12,389,636 · App. 18/526,315 · Granted Aug 12, 2025

Semiconductor device

Inventors: Yutaka Okazaki (Kanagawa, JP); Akihisa Shimomura (Kanagawa, JP); Naoto Yamade (Kanagawa, JP); Tomoya Takeshita (Kanagawa, JP); Tetsuhiro Tanaka (Tokyo, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H10D30/6757H10D30/6706H10D30/6734H10D30/6739H10D30/6755H10D64/62H10D86/423H10D86/481H10D86/60H10D99/00
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Quick Facts
Patent No.
US 12,389,636
App. No.
18/526,315
Granted
Aug 12, 2025
Kind
B2
Abstract

A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

Claims (94)

1. A semiconductor device comprising:

a first transistor including a first channel formation region;

a second transistor including a second channel formation region;

a third transistor including a third channel formation region;

a capacitor;

a first insulator over the first channel formation region;

a first conductor over the first insulator and overlapping the first channel formation region;

a second insulator over the first conductor;

a second conductor and a third conductor over the second insulator;

a third insulator over the second conductor and the third conductor;

a fourth conductor overlapping the second channel formation region;

a fifth conductor overlapping the third channel formation region;

a fourth insulator over the fourth conductor and the fifth conductor;

a sixth conductor over the fourth insulator;

a fifth insulator over the sixth conductor; and

a seventh conductor over the fifth insulator and overlapping the sixth conductor,

wherein the second channel formation region and the third channel formation region are over the third insulator,

wherein the second channel formation region overlaps the second conductor,

wherein the third channel formation region overlaps the third conductor,

wherein the sixth conductor is configured to be one electrode of the capacitor,

wherein the seventh conductor is configured to be another electrode of the capacitor,

wherein the sixth conductor is electrically connected to the second channel formation region and the third channel formation region,

wherein the sixth conductor is electrically connected to the first conductor,

wherein the first channel formation region includes silicon,

wherein the second channel formation region includes oxide semiconductor, and

wherein the third channel formation region includes oxide semiconductor.

2. The semiconductor device according to claim 1 , wherein the third insulator is configured to prevent impurities from being diffused.

3. The semiconductor device according to claim 1 , wherein the oxide semiconductor is a staked layer structure.

4. The semiconductor device according to claim 1 , wherein the silicon has an n-type conductivity.

5. The semiconductor device according to claim 1 , wherein the silicon has a p-type conductivity.

6. A semiconductor device comprising:

a first transistor including a first channel formation region;

a second transistor including a second channel formation region;

a third transistor including a third channel formation region;

a capacitor;

a first insulator over the first channel formation region;

a first conductor over the first insulator and overlapping the first channel formation region;

a second insulator over the first conductor;

a second conductor and a third conductor over the second insulator;

a third insulator over the second conductor and the third conductor;

a fourth conductor overlapping the second channel formation region;

a fifth conductor overlapping the third channel formation region;

a fourth insulator over the fourth conductor and the fifth conductor;

a sixth conductor over the fourth insulator;

a fifth insulator over the sixth conductor; and

a seventh conductor over the fifth insulator and overlapping the sixth conductor,

wherein the second channel formation region and the third channel formation region are over the third insulator,

wherein the second channel formation region overlaps the second conductor,

wherein the third channel formation region overlaps the third conductor,

wherein the sixth conductor is configured to be one electrode of the capacitor,

wherein the seventh conductor is configured to be another electrode of the capacitor,

wherein the sixth conductor is electrically connected to one of a source and a drain of the second transistor, and one of a source and a drain of the third transistor,

wherein the sixth conductor is electrically connected to the first conductor,

wherein another of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the first transistor,

wherein the first channel formation region includes silicon,

wherein the second channel formation region includes oxide semiconductor, and

wherein the third channel formation region includes oxide semiconductor.

7. The semiconductor device according to claim 6 , wherein the third insulator is configured to prevent impurities from being diffused.

8. The semiconductor device according to claim 6 , wherein the oxide semiconductor is a staked layer structure.

9. The semiconductor device according to claim 6 , wherein the silicon has an n-type conductivity.

10. The semiconductor device according to claim 6 , wherein the silicon has a p-type conductivity.

11. A semiconductor device comprising:

a first transistor including a first channel formation region;

a second transistor including a second channel formation region;

a third transistor including a third channel formation region;

a capacitor;

a wiring;

a first insulator over the first channel formation region;

a first conductor over the first insulator and overlapping the first channel formation region;

a second insulator over the first conductor;

a second conductor and a third conductor over the second insulator;

a third insulator over the second conductor and the third conductor;

a fourth conductor overlapping the second channel formation region;

a fifth conductor overlapping the third channel formation region;

a fourth insulator over the fourth conductor and the fifth conductor;

a sixth conductor over the fourth insulator;

a fifth insulator over the sixth conductor; and

a seventh conductor over the fifth insulator and overlapping the sixth conductor,

wherein the second channel formation region and the third channel formation region are over the third insulator,

wherein the second channel formation region overlaps the second conductor,

wherein the third channel formation region overlaps the third conductor,

wherein the sixth conductor is configured to be one electrode of the capacitor,

wherein the seventh conductor is configured to be another electrode of the capacitor,

wherein the sixth conductor is electrically connected to one of a source and a drain of the second transistor, and one of a source and a drain of the third transistor,

wherein the sixth conductor is electrically connected to the first conductor,

wherein another of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the first transistor,

wherein the seventh conductor is electrically connected to the wiring,

wherein the first channel formation region includes silicon,

wherein the second channel formation region includes oxide semiconductor, and

wherein the third channel formation region includes oxide semiconductor.

12. The semiconductor device according to claim 11 , wherein the third insulator is configured to prevent impurities from being diffused.

13. The semiconductor device according to claim 11 , wherein the oxide semiconductor is a staked layer structure.

14. The semiconductor device according to claim 11 , wherein the silicon has an n-type conductivity.

15. The semiconductor device according to claim 11 , wherein the silicon has a p-type conductivity.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 1, 2023
From: OKAZAKI, YUTAKA; SHIMOMURA, AKIHISA; YAMADE, NAOTO; TAKESHITA, TOMOYA; TANAKA, TETSUHIRO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 065734/0060 →
Priority Claims (1)
JP 2015-140794 · Jul 14, 2015 · national
Continuity (5)
Continuation 17861432 · Jul 11, 2022
Continuation 17006987 · Aug 31, 2020
Continuation 16367329 · Mar 28, 2019
Continuation 15204015 · Jul 7, 2016
Related Publication 20240128380A1 · Apr 18, 2024
References Cited (281)
US 5391394A · Hansen · 1995 [cited by applicant]
US 5434096A · Chu et al. · 1995 [cited by applicant]
US 5731856A · Kim et al. · 1998 [cited by applicant]
US 5744864A · Cillessen et al. · 1998 [cited by applicant]
US 5940733A · Beinglass et al. · 1999 [cited by applicant]
US 6294274B1 · Kawazoe et al. · 2001 [cited by applicant]
US 6403981B1 · Yu · 2002 [cited by applicant]
US 6563174B2 · Kawasaki et al. · 2003 [cited by applicant]
US 6583472B1 · Shibata et al. · 2003 [cited by applicant]
US 6727522B1 · Kawasaki et al. · 2004 [cited by applicant]
US 7049190B2 · Takeda et al. · 2006 [cited by applicant]
US 7061014B2 · Hosono et al. · 2006 [cited by applicant]
US 7064346B2 · Kawasaki et al. · 2006 [cited by applicant]
US 7098086B2 · Shibata et al. · 2006 [cited by applicant]
US 7105868B2 · Nause et al. · 2006 [cited by applicant]
US 7211825B2 · Shih et al. · 2007 [cited by applicant]
US 7282782B2 · Hoffman et al. · 2007 [cited by applicant]
US 7297977B2 · Hoffman et al. · 2007 [cited by applicant]
US 7323356B2 · Hosono et al. · 2008 [cited by applicant]
US 7385224B2 · Ishii et al. · 2008 [cited by applicant]
US 7402506B2 · Levy et al. · 2008 [cited by applicant]
US 7411209B2 · Endo et al. · 2008 [cited by applicant]
US 7453065B2 · Saito et al. · 2008 [cited by applicant]
US 7453087B2 · Iwasaki · 2008 [cited by applicant]
US 7462862B2 · Hoffman et al. · 2008 [cited by applicant]
US 7468304B2 · Kaji et al. · 2008 [cited by applicant]
US 7501293B2 · Ito et al. · 2009 [cited by applicant]
US 7501685B2 · Shibata et al. · 2009 [cited by applicant]
US 7674650B2 · Akimoto et al. · 2010 [cited by applicant]
US 7732819B2 · Akimoto et al. · 2010 [cited by applicant]
US 7825018B2 · Sasaki · 2010 [cited by applicant]
US 7982267B2 · Shibata et al. · 2011 [cited by applicant]
US 8253140B2 · Shibata et al. · 2012 [cited by applicant]
US 8304298B2 · Ofuji et al. · 2012 [cited by applicant]
US 8354674B2 · Kimura · 2013 [cited by applicant]
US 8547771B2 · Koyama · 2013 [cited by applicant]
US 8552431B2 · Shibata et al. · 2013 [cited by applicant]
US 8637864B2 · Saito et al. · 2014 [cited by applicant]
US 8933455B2 · Shibata et al. · 2015 [cited by applicant]
US 8995174B2 · Koyama · 2015 [cited by applicant]
US 9166019B2 · Saito et al. · 2015 [cited by applicant]
US 9166060B2 · Yamazaki et al. · 2015 [cited by applicant]
US 9208849B2 · Yamamoto · 2015 [cited by applicant]
US 9250490B2 · Shibata et al. · 2016 [cited by applicant]
US 9287370B2 · Kurokawa · 2016 [cited by applicant]
US 9324876B2 · Kobayashi et al. · 2016 [cited by applicant]
US 9368607B2 · Yamazaki et al. · 2016 [cited by applicant]
US 9466615B2 · Miyairi et al. · 2016 [cited by applicant]
US 9466622B2 · Shibata et al. · 2016 [cited by applicant]
US 9496409B2 · Yamazaki et al. · 2016 [cited by applicant]
US 9640226B2 · Matsuzaki et al. · 2017 [cited by applicant]
US 9698277B2 · Yamazaki et al. · 2017 [cited by applicant]
US 9711656B2 · Yamazaki et al. · 2017 [cited by applicant]
US 9741794B2 · Yamazaki · 2017 [cited by applicant]
US 9817032B2 · Takahashi · 2017 [cited by examiner]
US 9837546B2 · Yamazaki et al. · 2017 [cited by applicant]
US 10056475B2 · Yamazaki et al. · 2018 [cited by applicant]
US 10062790B2 · Yamazaki et al. · 2018 [cited by applicant]
US 10290745B2 · Yamazaki et al. · 2019 [cited by applicant]
US 10522691B2 · Yamazaki et al. · 2019 [cited by applicant]
US 11538940B2 · Yamazaki et al. · 2022 [cited by applicant]
US 20010046027A1 · Tai et al. · 2001 [cited by applicant]
US 20020056838A1 · Ogawa · 2002 [cited by applicant]
US 20020132454A1 · Ohtsu et al. · 2002 [cited by applicant]
US 20030189401A1 · Kido et al. · 2003 [cited by applicant]
US 20030218222A1 · Wager, III et al. · 2003 [cited by applicant]
US 20040038446A1 · Takeda et al. · 2004 [cited by applicant]
US 20040127038A1 · Carcia et al. · 2004 [cited by applicant]
US 20050017302A1 · Hoffman · 2005 [cited by applicant]
US 20050199959A1 · Chiang et al. · 2005 [cited by applicant]
US 20060035452A1 · Carcia et al. · 2006 [cited by applicant]
US 20060043377A1 · Hoffman et al. · 2006 [cited by applicant]
US 20060091793A1 · Baude et al. · 2006 [cited by applicant]
US 20060108529A1 · Saito et al. · 2006 [cited by applicant]
US 20060108636A1 · Sano et al. · 2006 [cited by applicant]
US 20060110867A1 · Yabuta et al. · 2006 [cited by applicant]
US 20060113536A1 · Kumomi et al. · 2006 [cited by applicant]
US 20060113539A1 · Sano et al. · 2006 [cited by applicant]
US 20060113549A1 · Den et al. · 2006 [cited by applicant]
US 20060113565A1 · Abe et al. · 2006 [cited by applicant]
US 20060169973A1 · Isa et al. · 2006 [cited by applicant]
US 20060170111A1 · Isa et al. · 2006 [cited by applicant]
US 20060197092A1 · Hoffman et al. · 2006 [cited by applicant]
US 20060208977A1 · Kimura · 2006 [cited by applicant]
US 20060228974A1 · Thelss et al. · 2006 [cited by applicant]
US 20060231882A1 · Kim et al. · 2006 [cited by applicant]
US 20060238135A1 · Kimura · 2006 [cited by applicant]
US 20060244107A1 · Sugihara et al. · 2006 [cited by applicant]
US 20060284171A1 · Levy et al. · 2006 [cited by applicant]
US 20060284172A1 · Ishii · 2006 [cited by applicant]
US 20060292777A1 · Dunbar · 2006 [cited by applicant]
US 20070024187A1 · Shin et al. · 2007 [cited by applicant]
US 20070046191A1 · Saito · 2007 [cited by applicant]
US 20070052025A1 · Yabuta · 2007 [cited by applicant]
US 20070054507A1 · Kaji et al. · 2007 [cited by applicant]
US 20070090365A1 · Hayashi et al. · 2007 [cited by applicant]
US 20070108446A1 · Akimoto · 2007 [cited by applicant]
US 20070152217A1 · Lai et al. · 2007 [cited by applicant]
US 20070172591A1 · Seo et al. · 2007 [cited by applicant]
US 20070187678A1 · Hirao et al. · 2007 [cited by applicant]
US 20070187760A1 · Furuta et al. · 2007 [cited by applicant]
US 20070194379A1 · Hosono et al. · 2007 [cited by applicant]
US 20070252928A1 · Ito et al. · 2007 [cited by applicant]
US 20070272922A1 · Kim et al. · 2007 [cited by applicant]
US 20070287296A1 · Chang · 2007 [cited by applicant]
US 20080006877A1 · Mardilovich et al. · 2008 [cited by applicant]
US 20080038882A1 · Takechi et al. · 2008 [cited by applicant]
US 20080038929A1 · Chang · 2008 [cited by applicant]
US 20080050595A1 · Nakagawara et al. · 2008 [cited by applicant]
US 20080073653A1 · Iwasaki · 2008 [cited by applicant]
US 20080083950A1 · Pan et al. · 2008 [cited by applicant]
US 20080106191A1 · Kawase · 2008 [cited by applicant]
US 20080128689A1 · Lee et al. · 2008 [cited by applicant]
US 20080129195A1 · Ishizaki et al. · 2008 [cited by applicant]
US 20080166834A1 · Kim et al. · 2008 [cited by applicant]
US 20080182358A1 · Cowdery-Corvan et al. · 2008 [cited by applicant]
US 20080224133A1 · Park et al. · 2008 [cited by applicant]
US 20080254569A1 · Hoffman et al. · 2008 [cited by applicant]
US 20080258139A1 · Ito et al. · 2008 [cited by applicant]
US 20080258140A1 · Lee et al. · 2008 [cited by applicant]
US 20080258141A1 · Park et al. · 2008 [cited by applicant]
US 20080258143A1 · Kim et al. · 2008 [cited by applicant]
US 20080296568A1 · Ryu et al. · 2008 [cited by applicant]
US 20090068773A1 · Lai et al. · 2009 [cited by applicant]
US 20090073325A1 · Kuwabara et al. · 2009 [cited by applicant]
US 20090114910A1 · Chang · 2009 [cited by applicant]
US 20090134399A1 · Sakakura et al. · 2009 [cited by applicant]
US 20090152506A1 · Umeda et al. · 2009 [cited by applicant]
US 20090152541A1 · Maekawa et al. · 2009 [cited by applicant]
US 20090278122A1 · Hosono et al. · 2009 [cited by applicant]
US 20090280600A1 · Hosono et al. · 2009 [cited by applicant]
US 20100065844A1 · Tokunaga · 2010 [cited by applicant]
US 20100092800A1 · Itagaki et al. · 2010 [cited by applicant]
US 20100102313A1 · Miyairi et al. · 2010 [cited by applicant]
US 20100109002A1 · Itagaki et al. · 2010 [cited by applicant]
US 20100193785A1 · Kimura · 2010 [cited by applicant]
US 20100227459A1 · Yamasaki · 2010 [cited by applicant]
US 20110012117A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110248261A1 · Yamazaki · 2011 [cited by applicant]
US 20120153278A1 · Jeong et al. · 2012 [cited by applicant]
US 20120273773A1 · Ieda et al. · 2012 [cited by applicant]
US 20130146959A1 · Cheng et al. · 2013 [cited by applicant]
US 20130228773A1 · Kurokawa · 2013 [cited by applicant]
US 20130270563A1 · Yamazaki · 2013 [cited by applicant]
US 20130272055A1 · Yamamoto · 2013 [cited by applicant]
US 20140008648A1 · Yamazaki · 2014 [cited by applicant]
US 20140127868A1 · Saito et al. · 2014 [cited by applicant]
US 20140363942A1 · Hong et al. · 2014 [cited by applicant]
US 20150187814A1 · Miyairi et al. · 2015 [cited by applicant]
US 20150194498A1 · Yuan · 2015 [cited by applicant]
US 20150280691A1 · Koyama · 2015 [cited by applicant]
US 20190157314A1 · Kimura · 2019 [cited by applicant]
US 20230093689A1 · Yamazaki et al. · 2023 [cited by applicant]
US 20240113230A1 · Yamazaki et al. · 2024 [cited by applicant]
EP 0746027A · 1996 [cited by applicant]
EP 1081676A · 2001 [cited by applicant]
EP 1156517A · 2001 [cited by applicant]
EP 1564713A · 2005 [cited by applicant]
EP 1737044A · 2006 [cited by applicant]
EP 2226847A · 2010 [cited by applicant]
EP 2299435A · 2011 [cited by applicant]
JP 60198861A · 1985 [cited by applicant]
JP 63210022A · 1988 [cited by applicant]
JP 63210023A · 1988 [cited by applicant]
JP 63210024A · 1988 [cited by applicant]
JP 63215519A · 1988 [cited by applicant]
JP 63239117A · 1988 [cited by applicant]
JP 63265818A · 1988 [cited by applicant]
JP 04266031A · 1992 [cited by applicant]
JP 05251705A · 1993 [cited by applicant]
JP 06275697A · 1994 [cited by applicant]
JP 08264794A · 1996 [cited by applicant]
JP 09069496A · 1997 [cited by applicant]
JP 09082813A · 1997 [cited by applicant]
JP 11505377 · 1999 [cited by applicant]
JP 2000040675A · 2000 [cited by applicant]
JP 2000044236A · 2000 [cited by applicant]
JP 2000150900A · 2000 [cited by applicant]
JP 2001085690A · 2001 [cited by applicant]
JP 2001110750A · 2001 [cited by applicant]
JP 2001144301A · 2001 [cited by applicant]
JP 2002076356A · 2002 [cited by applicant]
JP 2002124658A · 2002 [cited by applicant]
JP 2002289859A · 2002 [cited by applicant]
JP 2003086000A · 2003 [cited by applicant]
JP 2003086808A · 2003 [cited by applicant]
JP 2004103957A · 2004 [cited by applicant]
JP 2004273614A · 2004 [cited by applicant]
JP 2004273732A · 2004 [cited by applicant]
JP 2007048926A · 2007 [cited by applicant]
JP 2008282896A · 2008 [cited by applicant]
JP 2009004733A · 2009 [cited by applicant]
JP 2009033145A · 2009 [cited by applicant]
JP 2011166160A · 2011 [cited by applicant]
JP 4863176 · 2012 [cited by applicant]
JP 5078070 · 2012 [cited by applicant]
JP 2012257187A · 2012 [cited by applicant]
JP 2013102149A · 2013 [cited by applicant]
JP 2013211089A · 2013 [cited by applicant]
JP 2013235644A · 2013 [cited by applicant]
JP 2014187359A · 2014 [cited by applicant]
JP 2014209596A · 2014 [cited by applicant]
JP 2015015457A · 2015 [cited by applicant]
JP 2015053477A · 2015 [cited by applicant]
JP 2015073090A · 2015 [cited by applicant]
JP 2015144271A · 2015 [cited by applicant]
WO WO2001024238 · 2001 [cited by applicant]
WO WO2004114391 · 2004 [cited by applicant]
WO WO2007099922 · 2007 [cited by applicant]
WO WO2008143304 · 2008 [cited by applicant]
WO WO2015097589 · 2015 [cited by applicant]
Fortunato.E et al., “Wide-Bandgap High-Mobility ZnO Thin-Film Transistors Produced at Room Temperature”, Appl. Phys. Lett. (Applied Physics Letters) , Sep. 27, 2004, vol. 85, No. 13, pp. 2541-2543. [cited by applicant]
Dembo.H et al., “RFCPUS on Glass and Plastic Substrates Fabricated by TFT Transfer Technology”, IEDM 05: Technical Digest of International Electron Devices Meeting, Dec. 5, 2005, pp. 1067-1069. [cited by applicant]
Ikeda.T et al., “Full-Functional System Liquid Crystal Display Using Cg-Silicon Technology”, SID Digest '04 : SID International Symposium Digest of Technical Papers, 2004, vol. 35, pp. 860-863. [cited by applicant]
Nomura.K et al., “Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors”, Nature, Nov. 25, 2004, vol. 432, pp. 488-492. [cited by applicant]
Park.J et al., “Improvements in the Device Characteristics of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Ar Plasma Treatment”, Appl. Phys. Lett. (Applied Physics Letters) , Jun. 26, 2007, vol. 90, No. … [cited by applicant]
Takahashi.M et al., “Theoretical Analysis of IGZO Transparent Amorphous Oxide Semiconductor”, IDW '08 : Proceedings of the 15th International Display Workshops, Dec. 3, 2008, pp. 1637-1640. [cited by applicant]
Hayashi.R et al., “42.1: Invited Paper: Improved Amorphous In—Ga—Zn—O TFTs”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 621-624. [cited by applicant]
Prins.M et al., “A Ferroelectric Transparent Thin-Film Transistor”, Appl. Phys. Lett. (Applied Physics Letters) , Jun. 17, 1996, vol. 68, No. 25, pp. 3650-3652. [cited by applicant]
Nakamura.M et al., “The phase relations in the In2O3—Ga2ZnO4—ZnO system at 1350° C.”, Journal of Solid State Chemistry, Aug. 1, 1991, vol. 93, No. 2, pp. 298-315, Elsevier. [cited by applicant]
Kimizuka.N et al., “Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m=3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m=7, 8, 9, and 16) in the In2O3—ZnGa2O4—ZnO System”, Journal of Solid State Chem… [cited by applicant]
Nomura.K et al., “Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor”, Science, May 23, 2003, vol. 300, No. 5623, pp. 1269-1272. [cited by applicant]
Masuda.S et al., “Transparent thin film transistors using ZnO as an active channel layer and their electrical properties”, J. Appl. Phys. (Journal of Applied Physics) , Feb. 1, 2003, vol. 93, No. 3, pp. 1624-1630. [cited by applicant]
Asakuma.N et al., “Crystallization and Reduction of Sol-Gel-Derived Zinc Oxide Films by Irradiation With Ultraviolet Lamp”, Journal of Sol-Gel Science and Technology, 2003, vol. 26, pp. 181-184. [cited by applicant]
Osada.T et al., “15.2: Development of Driver-Integrated Panel using Amorphous In—Ga—Zn-Oxide TFT”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, vol. 40, pp. 184-187. [cited by applicant]
Nomura.K et al., “Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films”, Appl. Phys. Lett. (Applied Physics Letters) , Sep. 13, 200… [cited by applicant]
Li.C et al., “Modulated Structures of Homologous Compounds InMO3(ZnO)m (M=In,Ga; m=Integer) Described by Four-Dimensional Superspace Group”, Journal of Solid State Chemistry, 1998, vol. 139, pp. 347-355, Elsevier. [cited by applicant]
Son.K et al., “42.4L: Late-News Paper: 4 Inch QVGA AMOLED Driven by the Threshold Voltage Controlled Amorphous Gizo (Ga2O3—In2O3—ZnO) TFT”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20… [cited by applicant]
Lee.J et al., “World's Largest (15-Inch) XGA AMLCD Panel Using IGZO Oxide TFT”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 625-628. [cited by applicant]
Nowatari.H et al., “60.2: Intermediate Connector With Suppressed Voltage Loss for White Tandem OLEDs”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, vol. 40, pp. 899-902. [cited by applicant]
Kanno.H et al., “White Stacked Electrophosphorecent Organic Light-Emitting Devices Employing MOO3 as a Charge-Generation Layer”, Adv. Mater. (Advanced Materials), 2006, vol. 18, No. 3, pp. 339-342. [cited by applicant]
Tsuda.K et al., “Ultra Low Power Consumption Technologies for Mobile TFT-LCDs”, IDW '02 : Proceedings of the 9th International Display Workshops, Dec. 4, 2002, pp. 295-298. [cited by applicant]
Van de Walle.C, “Hydrogen as a Cause of Doping in Zinc Oxide”, Phys. Rev. Lett. (Physical Review Letters), Jul. 31, 2000, vol. 85, No. 5, pp. 1012-1015. [cited by applicant]
Fung.T et al., “2-D Numerical Simulation of High Performance Amorphous In—Ga—Zn—O TFTs for Flat Panel Displays”, AM-FPD '08 Digest of Technical Papers, Jul. 2, 2008, pp. 251-252, The Japan Society of Applied Physics. [cited by applicant]
Jeong.J et al., “3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, N… [cited by applicant]
Park.J et al., “High performance amorphous oxide thin film transistors with self-aligned top-gate structure”, IEDM 09: Technical Digest of International Electron Devices Meeting, Dec. 7, 2009, pp. 191-194. [cited by applicant]
Kurokawa.Y et al., “UHF RFCPUS on Flexible and Glass Substrates for Secure RFID Systems”, Journal of Solid-State Circuits , 2008, vol. 43, No. 1, pp. 292-299. [cited by applicant]
Ohara.H et al., “Amorphous In—Ga—Zn-Oxide TFTs with Suppressed Variation for 4.0 inch QVGA AMOLED Display”, AM-FPD '09 Digest of Technical Papers, Jul. 1, 2009, pp. 227-230, The Japan Society of Applied Physics. [cited by applicant]
Coates.D et al., “Optical Studies of the Amorphous Liquid-Cholesteric Liquid Crystal Transition:The “Blue Phase””, Physics Letters, Sep. 10, 1973, vol. 45A, No. 2, pp. 115-116. [cited by applicant]
Cho.D et al., “21.2:Al and Sn-Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back-Plane”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 280-283. [cited by applicant]
Lee.M et al., “15.4:Excellent Performance of Indium-Oxide-Based Thin-Film Transistors by Dc Sputtering”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 191-193. [cited by applicant]
Jin.D et al., “65.2:Distinguished Paper:World-Largest (6.5″) Flexible Full Color Top Emission AMOLED Display on Plastic Film and Its Bending Properties”, SID Digest '09 : SID International Symposium Digest of Technical … [cited by applicant]
Sakata.J et al., “Development of 4.0-In. AMOLED Display With Driver Circuit Using Amorphous In—Ga—Zn-Oxide TFTs”, IDW '09 : Proceedings of the 16th International Display Workshops, 2009, pp. 689-692. [cited by applicant]
Park.J et al., “Amorphous Indium-Gallium-Zinc Oxide TFTs and Their Application for Large Size AMOLED”, AM-FPD '08 Digest of Technical Papers, Jul. 2, 2008, pp. 275-278. [cited by applicant]
Park.S et al., “Challenge to Future Displays: Transparent AM-OLED Driven by PEALD Grown ZnO TFT”, IMID '07 Digest, 2007, pp. 1249-1252. [cited by applicant]
Godo.H et al., “Temperature Dependence of Characteristics and Electronic Structure for Amorphous In—Ga—Zn-Oxide TFT”, AM-FPD '09 Digest of Technical Papers, Jul. 1, 2009, pp. 41-44. [cited by applicant]
Osada.T et al., “Development of Driver-Integrated Panel Using Amorphous In—Ga—Zn-Oxide TFT”, AM-FPD '09 Digest of Technical Papers, Jul. 1, 2009, pp. 33-36. [cited by applicant]
Hirao.T et al., “Novel Top-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AMLCDs”, J. Soc. Inf. Display (Journal of the Society for Information Display), 2007, vol. 15, No. 1, pp. 17-22. [cited by applicant]
Hosono.H, “68.3:Invited Paper:Transparent Amorphous Oxide Semiconductors for High Performance TFT”, SID Digest '07 : SID International Symposium Digest of Technical Papers, 2007, vol. 38, pp. 1830-1833. [cited by applicant]
Godo.H et al., “P-9:Numerical Analysis on Temperature Dependence of Characteristics of Amorphous In—Ga—Zn-Oxide TFT”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 1110-1112. [cited by applicant]
Ohara.H et al., “21.3:4.0 In. QVGA AMOLED Display Using In—Ga—Zn-Oxide TFTs With a Novel Passivation Layer”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 284-287. [cited by applicant]
Miyasaka.M, “SUFTLA Flexible Microelectronics on Their Way to Business”, SID Digest '07 : SID International Symposium Digest of Technical Papers, 2007, vol. 38, pp. 1673-1676. [cited by applicant]
Chern.H et al., “An Analytical Model for the Above-Threshold Characteristics of Polysilicon Thin-Film Transistors”, IEEE Transactions on Electron Devices, Jul. 1, 1995, vol. 42, No. 7, pp. 1240-1246. [cited by applicant]
Kikuchi.H et al., “39.1:Invited Paper:Optically Isotropic Nano-Structured Liquid Crystal Composites for Display Applications”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 5… [cited by applicant]
Asaoka.Y et al., “29.1:Polarizer-Free Reflective LCD Combined With Ultra Low-Power Driving Technology”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 395-398. [cited by applicant]
Lee.H et al., “Current Status of, Challenges to, and Perspective View of AM-OLED”, IDW '06 : Proceedings of the 13th International Display Workshops, Dec. 7, 2006, pp. 663-666. [cited by applicant]
Kikuchi.H et al., “62.2:Invited Paper:Fast Electro-Optical Switching in Polymer-Stabilized Liquid Crystalline Blue Phases for Display Application”, SID Digest '07 : SID International Symposium Digest of Technical Papers… [cited by applicant]
Nakamura.M, “Synthesis of Homologous Compound with New Long-Period Structure”, NIRIM Newsletter, Mar. 1, 1995, vol. 150, pp. 1-4. [cited by applicant]
Kikuchi.H et al., “Polymer-Stabilized Liquid Crystal Blue Phases”, Nature Materials, Sep. 2, 2002, vol. 1, pp. 64-68. [cited by applicant]
Kimizuka.N et al., “Spinel, YbFe2O4, and Yb2Fe3O7 Types of Structures for Compounds in the In2O3 and Sc2O3—A2O3—BO Systems [A; Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu,or Zn] at Temperatures Over 1000° C.”, Journal of Solid… [cited by applicant]
Kitzerow.H et al., “Observation of Blue Phases in Chiral Networks”, Liquid Crystals, 1993, vol. 14, No. 3, pp. 911-916. [cited by applicant]
Costello.M et al., “Electron Microscopy of a Cholesteric Liquid Crystal and Its Blue Phase”, Phys. Rev. A (Physical Review. A), May 1, 1984, vol. 29, No. 5, pp. 2957-2959. [cited by applicant]
Meiboom.S et al., “Theory of the Blue Phase of Cholesteric Liquid Crystals”, Phys. Rev. Lett. (Physical Review Letters), May 4, 1981, vol. 46, No. 18, pp. 1216-1219. [cited by applicant]
Park.S et al., “42.3: Transparent ZnO Thin Film Transistor for the Application of High Aperture Ratio Bottom Emission AM-OLED Display”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 20… [cited by applicant]
Orita.M et al., “Mechanism of Electrical Conductivity of Transparent InGaZnO4”, Phys. Rev. B (Physical Review. B), Jan. 15, 2000, vol. 61, No. 3, pp. 1811-1816. [cited by applicant]
Nomura.K et al., “Amorphous Oxide Semiconductors for High-Performance Flexible Thin- Film Transistors”, Jpn. J. Appl. Phys. (Japanese Journal of Applied Physics) , 2006, vol. 45, No. 5B, pp. 4303-4308. [cited by applicant]
Janotti.A et al., “Native Point Defects In ZnO”, Phys. Rev. B (Physical Review. B), Oct. 4, 2007, vol. 76, No. 16, pp. 165202-1-165202-22. [cited by applicant]
Park.J et al., “Electronic Transport Properties of Amorphous Indium-Gallium-Zinc Oxide Semiconductor Upon Exposure to Water”, Appl. Phys. Lett. (Applied Physics Letters) , 2008, vol. 92, pp. 072104-1-072104-3. [cited by applicant]
Hsieh.H et al., “P-29:Modeling of Amorphous Oxide Semiconductor Thin Film Transistors and Subgap Density of States”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 12… [cited by applicant]
Janotti.A et al., “Oxygen Vacancies In ZnO”, Appl. Phys. Lett. (Applied Physics Letters) , 2005, vol. 87, pp. 122102-1-122102-3. [cited by applicant]
Oba.F et al., “Defect energetics in ZnO: A hybrid Hartree-Fock density functional study”, Phys. Rev. B (Physical Review. B), 2008, vol. 77, pp. 245202-1-245202-6. [cited by applicant]
Orita.M et al., “Amorphous transparent conductive oxide InGaO3(ZnO)m (m<4):a Zn4s conductor”, Philosophical Magazine, 2001, vol. 81, No. 5, pp. 501-515. [cited by applicant]
Hosono.H et al., “Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples”, J. Non-Cryst. Solids (Journal of Non-Crystalline Solids), 1996, vol. 198- 200, pp. 165-169. [cited by applicant]
Mo.Y et al., “Amorphous Oxide TFT Backplanes for Large Size AMOLED Displays”, IDW '08 : Proceedings of the 6th International Display Workshops, Dec. 3, 2008, pp. 581-584. [cited by applicant]
Kim.S et al., “High-Performance oxide thin film transistors passivated by various gas plasmas”, 214th ECS Meeting, 2008, No. 2317, ECS. [cited by applicant]
Clark.S et al., “First Principles Methods Using CASTEP”, Zeitschrift fur Kristallographie, 2005, vol. 220, pp. 567-570. [cited by applicant]
Lany.S et al., “Dopability, Intrinsic Conductivity, and Nonstoichiometry of Transparent Conducting Oxides”, Phys. Rev. Lett. (Physical Review Letters), Jan. 26, 2007, vol. 98, pp. 045501-1-045501-4. [cited by applicant]
Park.J et al., “Dry etching of ZnO films and plasma-induced damage to optical properties”, J. Vac. Sci. Technol. B (Journal of Vacuum Science & Technology B), Mar. 1, 2003, vol. 21, No. 2, pp. 800-803. [cited by applicant]
Oh.M et al., “Improving the Gate Stability of ZnO Thin-Film Transistors With Aluminum Oxide Dielectric Layers”, J. Electrochem. Soc. (Journal of the Electrochemical Society), 2008, vol. 155, No. 12, pp. H1009-H1014. [cited by applicant]
Ueno.K et al., “Field-Effect Transistor on SITIO3 With Sputtered Al2O3 Gate Insulator”, Appl. Phys. Lett. (Applied Physics Letters), Sep. 1, 2003, vol. 83, No. 9, pp. 1755-1757. [cited by applicant]
Cavaleiro.A et al., “Oxidation of sputtered W-based coatings”, Surface and Contaings Technology, Sep. 1, 2000, vol. 131, pp. 441-447. [cited by applicant]