Protection of high-K dielectric during reliability anneal on nanosheet structures
A starting structure for forming a gate-all-around field effect transistor (FET) and a method of fabricating the gate-all-around FET. The method includes forming a stack of silicon nanosheets above a substrateforming an interfacial layer over the nanosheets depositing a high-k dielectric layer conformally on the interfacial layer. The method also includes depositing a layer of silicon nitride (SiN) above the high-k dielectric layer and performing reliability anneal after depositing the layer of SiN to crystallize the high-k dielectric layer.
1. A method of fabricating a gate-all-around field effect transistor (FET), the method comprising:
forming a stack of silicon nanosheets above a substrate, the nanosheets being formed as three-dimensional structures with empty spaces around each of the nanosheets;
forming an interfacial layer over the nanosheets, the forming the interfacial layer including covering four sides that form a perimeter of a cross-section of the three-dimensional structure of each of the nanosheets;
depositing a high-k dielectric layer conformally on the interfacial layer;
depositing a layer of silicon nitride (SiN) above the high-k dielectric layer;
depositing titanium nitride (TiN) on the high-k dielectric layer and depositing the layer of SiN on the TiN, and
performing reliability anneal after the depositing the layer of SiN to crystalize the high-k dielectric layer.
2. The method according to claim 1 , wherein the covering the four sides that form the perimeter of the cross-section of the three-dimensional structure of each of the nanosheets includes partially filling the empty spaces.
3. The method according to claim 1 , wherein the depositing the layer of SiN includes depositing SiN directly on the high-k dielectric layer.
4. The method according to claim 3 , wherein the depositing the SiN is by atomic layer deposition and the SiN fills the empty spaces.
5. The method according to claim 1 , wherein the depositing the TiN is by atomic layer deposition.
6. The method according to claim 5 , wherein the depositing the TiN includes partially filling the empty spaces and leaving a remainder of the empty spaces.
7. The method according to claim 6 , wherein the depositing the layer of SiN includes filling the remainder of the empty spaces.
8. The method according to claim 1 , wherein the depositing the TiN includes completely filling the empty spaces.
9. The method according to claim 8 , wherein the depositing the layer of SiN includes conformally depositing the layer of SiN over the TiN.
10. The method according to claim 1 , further comprising selectively etching the layer of SiN following the reliability anneal.
11. The method according to claim 10 , further comprising depositing a workfunction metal layer over the high-k dielectric layer.
12. The method according to claim 11 , further comprising encapsulating the workfunction metal in a gate metal.