Gate with self-aligned ledge for enhancement mode GaN transistors
An enhancement-mode GaN transistor with reduced gate leakage current between a gate contact and a 2DEG region and a method for manufacturing the same. The enhancement-mode GaN transistor including a GaN layer, a barrier layer disposed on the GaN layer with a 2DEG region formed at an interface between the GaN layer and the barrier layer, and source contact and drain contacts disposed on the barrier layer. The GaN transistor further includes a p-type gate material formed above the barrier layer and between the source and drain contacts and a gate metal disposed on the p-type gate material, with wherein the p-type gate material including comprises a pair of self-aligned ledges that extend toward the source contact and drain contact, respectively.
1. An enhancement-mode GaN transistor, comprising:
a GaN layer;
a barrier layer disposed on the GaN layer with a 2DEG region formed at an interface between the GaN layer and the barrier layer;
a source contact and a drain contact formed on the barrier layer;
a p-type gate material formed above the barrier layer, the p-type gate material having side surfaces extending horizontally towards the source contact and drain contact, respectively, and contacting the barrier layer; and
a gate metal disposed on the p-type gate material, the gate metal having sidewalls extending towards the p-type gate material,
wherein the p-type gate material comprises a pair of horizontal ledges that extend past the respective sidewalls of the gate metal and toward the source contact and the drain contact, respectively, the pair of horizontal ledges having substantially equal widths from the sidewalls of the gate metal to the side surfaces of the p-type gate material, respectively.
2. The enhancement-mode GaN transistor according to claim 1 , wherein the pair of horizontal ledges of the p-type gate material are self-aligned.
3. The enhancement-mode GaN transistor according to claim 1 , wherein the barrier layer comprises aluminum gallium nitride (AlGaN).
4. The enhancement-mode GaN transistor according to claim 1 , wherein the p-type gate material has a first width between the side surfaces of the p-type gate material and the gate metal has a second width between sidewalls of the gate metal, the second width being less than the first width.
5. An enhancement-mode GaN transistor, comprising:
a GaN layer;
a barrier layer disposed on the GaN layer with a 2DEG region formed at an interface between the GaN layer and the barrier layer;
a source contact and a drain contact disposed on the barrier layer;
a p-type gate material formed above the barrier layer and between the source and drain contacts;
and a gate metal disposed on the p-type gate material,
wherein the p-type gate material comprises: (i) a pair of self-aligned ledges that extend past sidewalls of the gate metal towards the source contact and drain contact, respectively; and (ii) side surfaces that extend horizontally towards the source contact and drain contact, respectively, and contact the barrier layer.
6. The enhancement-mode GaN transistor according to claim 5 , wherein the barrier layer comprises aluminum gallium nitride (AlGaN).
7. The enhancement-mode GaN transistor according to claim 5 , wherein the pair of self-aligned ledges are symmetric with respect to the gate metal.