Semiconductor device, and display device and electronic device having the same
An object is to provide a semiconductor device which can suppress characteristic deterioration in each transistor without destabilizing operation. In a non-selection period, a transistor is turned on at regular intervals, so that a power supply potential is supplied to an output terminal of a shift register circuit. A power supply potential is supplied to the output terminal of the shift register circuit through the transistor. Since the transistor is not always on in a non-selection period, a shift of the threshold voltage of the transistor is suppressed. In addition, a power supply potential is supplied to the output terminal of the shift register circuit through the transistor at regular intervals. Therefore, the shift register circuit can suppress noise which is generated in the output terminal.
1. A semiconductor device comprising:
a first transistor comprising a gate terminal, a first terminal, and a second terminal;
a second transistor comprising a gate terminal, a first terminal, and a second terminal;
a third transistor comprising a gate terminal, a first terminal, and a second terminal;
a fourth transistor comprising a gate terminal, a first terminal, and a second terminal;
a fifth transistor comprising a gate terminal, a first terminal, and a second terminal;
a sixth transistor comprising a gate terminal, a first terminal, and a second terminal;
a seventh transistor comprising a gate terminal, a first terminal, and a second terminal; and
an eighth transistor comprising a gate terminal, a first terminal, and a second terminal;
wherein the first terminal of the first transistor is electrically connected to the gate terminal of the second transistor, the first terminal of the fourth transistor, the gate terminal of the fifth transistor, and the first terminal of the seventh transistor,
wherein the first terminal of the second transistor is electrically connected to the first terminal of the third transistor and an output terminal,
wherein the gate terminal of the third transistor is electrically connected to the gate terminal of the fourth transistor, and the first terminal of the eighth transistor,
wherein the first terminal of the fifth transistor is electrically connected to the first terminal of the sixth transistor, and the gate terminal of the eighth transistor,
wherein the gate terminal of the sixth transistor is electrically connected to the second terminal of the sixth transistor, and
wherein the second terminal of the eighth transistor is electrically connected to a wiring configured to be supplied with a control signal.
2. The semiconductor device according to claim 1 , wherein the second terminal of the first transistor is electrically connected to a first power supply.
3. The semiconductor device according to claim 1 , wherein the gate terminal of the sixth transistor and the second terminal of the sixth transistor is electrically connected to a first power supply.
4. The semiconductor device according to claim 1 , wherein the second terminal of the eighth transistor is electrically connected to an input terminal.
5. The semiconductor device according to claim 1 , wherein the second terminal of the second transistor is electrically connected to an input terminal.
6. The semiconductor device according to claim 1 , wherein the second terminal of the seventh transistor is electrically connected to a second power supply.
7. The semiconductor device according to claim 1 , wherein the output terminal is electrically connected to a buffer circuit.
8. A semiconductor device comprising:
a first transistor comprising a gate terminal, a first terminal, and a second terminal;
a second transistor comprising a gate terminal, a first terminal, and a second terminal;
a third transistor comprising a gate terminal, a first terminal, and a second terminal;
a fourth transistor comprising a gate terminal, a first terminal, and a second terminal;
a fifth transistor comprising a gate terminal, a first terminal, and a second terminal;
a sixth transistor comprising a gate terminal, a first terminal, and a second terminal;
a seventh transistor comprising a gate terminal, a first terminal, and a second terminal;
an eighth transistor comprising a gate terminal, a first terminal, and a second terminal; and
a capacitor comprising a first electrode and a second electrode,
wherein the first terminal of the first transistor is electrically connected to the gate terminal of the second transistor, the first terminal of the fourth transistor, the gate terminal of the fifth transistor, the first terminal of the seventh transistor, and the first electrode of the capacitor,
wherein the first terminal of the second transistor is electrically connected to the first terminal of the third transistor the second electrode of the capacitor, and an output terminal,
wherein the gate terminal of the third transistor is electrically connected to the gate terminal of the fourth transistor, and the first terminal of the eighth transistor,
wherein the first terminal of the fifth transistor is electrically connected to the first terminal of the sixth transistor, and the gate terminal of the eighth transistor,
wherein the gate terminal of the sixth transistor is electrically connected to the second terminal of the sixth transistor, and
wherein the second terminal of the eighth transistor is electrically connected to a wiring configured to be supplied with a control signal.
9. The semiconductor device according to claim 8 , wherein the second terminal of the first transistor is electrically connected to a first power supply.
10. The semiconductor device according to claim 8 , wherein the gate terminal of the sixth transistor and the second terminal of the sixth transistor is electrically connected to a first power supply.
11. The semiconductor device according to claim 8 , wherein the second terminal of the eighth transistor is electrically connected to an input terminal.
12. The semiconductor device according to claim 8 , wherein the second terminal of the second transistor is electrically connected to an input terminal.
13. The semiconductor device according to claim 8 , wherein the second terminal of the seventh transistor is electrically connected to a second power supply.
14. The semiconductor device according to claim 8 , wherein the output terminal is electrically connected to a buffer circuit.
15. A semiconductor device comprising:
a first flip-flop circuit, a second flip-flop circuit, and a third flip-flop circuit each comprising:
a first transistor comprising a gate terminal, a first terminal, and a second terminal;
a second transistor comprising a gate terminal, a first terminal, and a second terminal;
a third transistor comprising a gate terminal, a first terminal, and a second terminal;
a fourth transistor comprising a gate terminal, a first terminal, and a second terminal;
a fifth transistor comprising a gate terminal, a first terminal, and a second terminal;
a sixth transistor comprising a gate terminal, a first terminal, and a second terminal;
a seventh transistor comprising a gate terminal, a first terminal, and a second terminal;
an eighth transistor comprising a gate terminal, a first terminal, and a second terminal; and
a capacitor comprising a first electrode and a second electrode,
wherein the first terminal of the first transistor is electrically connected to the gate terminal of the second transistor, the first terminal of the fourth transistor, the gate terminal of the fifth transistor, the first terminal of the seventh transistor, and the first electrode of the capacitor,
wherein the first terminal of the second transistor is electrically connected to the first terminal of the third transistor, the second electrode of the capacitor, and an output terminal,
wherein the gate terminal of the third transistor is electrically connected to the gate terminal of the fourth transistor, and the first terminal of the eighth transistor,
wherein the first terminal of the fifth transistor is electrically connected to the first terminal of the sixth transistor, and the gate terminal of the eighth transistor, and
wherein the gate terminal of the sixth transistor is electrically connected to the second terminal of the sixth transistor;
wherein the gate of the first transistor in the second flip-flop circuit is electrically connected to the output terminal of the first flip-flop circuit,
wherein the gate of the seventh transistor in the second flip-flop circuit is electrically connected to the output terminal of the third flip-flop circuit,
wherein the second terminal of the eighth transistor in the first flip-flop circuit is electrically connected to a first wiring configured to be supplied with a first control signal, and
wherein the second terminal of the eighth transistor in the second flip-flop circuit is electrically connected to a second wiring configured to be supplied with a second control signal.
16. The semiconductor device according to claim 15 , wherein the second terminal of the first transistor is electrically connected to a first power supply.
17. The semiconductor device according to claim 15 , wherein the gate terminal of the sixth transistor and the second terminal of the sixth transistor is electrically connected to a first power supply.
18. The semiconductor device according to claim 15 , wherein the second terminal of the eighth transistor is electrically connected to an input terminal.
19. The semiconductor device according to claim 15 , wherein the second terminal of the second transistor is electrically connected to an input terminal.
20. The semiconductor device according to claim 15 , wherein the second terminal of the seventh transistor is electrically connected to a second power supply.
21. The semiconductor device according to claim 15 , wherein the output terminal is electrically connected to a buffer circuit.