Display device and electronic device including the same
A display device includes a pixel portion including a plurality of pixels each including a first transistor, a second transistor, and a light-emitting element, in which a gate of the first transistor is electrically connected to a scan line, one of a source and a drain of the first transistor is electrically connected to a signal line, and the other of them is electrically connected to a gate of the second transistor; one of a source and a drain of the second transistor is electrically connected to a power supply line and the other of them is electrically connected to the light-emitting element, and the first transistor includes an oxide semiconductor layer. A period when the display device displays a still image includes a period in which output of a signal to all the scan lines in the pixel portion is stopped.
1. A display device comprising:
a display panel comprising:
a pixel portion comprising:
a pixel comprising:
a first transistor comprising:
a gate electrically connected to a scan line; and
a crystalline oxide semiconductor layer comprising indium, gallium, and zinc;
a second transistor comprising a gate electrically connected to a signal line through the first transistor; and
a light-emitting element electrically connected to a power supply line through the second transistor; and
a driver circuit portion comprising:
a gate line driver circuit; and
a display control circuit configured to switch between supply and stop of clock pulse to the driver circuit portion,
wherein the clock pulse is to be supplied to the gate line driver circuit,
wherein the crystalline oxide semiconductor layer has a crystallinity of 80% or more, and
wherein a carrier concentration of the crystalline oxide semiconductor layer is less than 1×10 14 /cm 3 .
2. The display device according to claim 1 , further comprising a memory circuit comprising a plurality of memory cells.
3. The display device according to claim 1 , further comprising a comparison circuit.
4. The display device according to claim 1 , further comprising a selection circuit.
5. The display device according to claim 1 , wherein, in the first transistor, the crystalline oxide semiconductor layer is positioned over the gate.
6. The display device according to claim 1 , wherein the pixel comprises a capacitor electrically connected between the gate of the second transistor and the power supply line.
7. The display device according to claim 1 , wherein a hydrogen concentration of the oxide semiconductor layer is less than or equal to 5×10 19 /cm 3 .
8. A display device comprising:
a display panel comprising:
a pixel portion comprising:
a pixel comprising:
a first transistor comprising:
a gate electrically connected to a scan line; and
a crystalline oxide semiconductor layer comprising indium, gallium, and zinc;
a second transistor comprising a gate electrically connected to a signal line through the first transistor; and
a light-emitting element electrically connected to a power supply line through the second transistor; and
a driver circuit portion comprising:
a gate line driver circuit; and
a signal line driver circuit; and
a display control circuit configured to switch between supply and stop of clock pulse to the driver circuit portion,
wherein the clock pulse is to be supplied to the gate line driver circuit,
wherein the crystalline oxide semiconductor layer has a crystallinity of 80% or more, and
wherein a carrier concentration of the crystalline oxide semiconductor layer is less than 1×10 14 /cm 3 .
9. The display device according to claim 8 , further comprising a memory circuit comprising a plurality of memory cells.
10. The display device according to claim 8 , further comprising a comparison circuit.
11. The display device according to claim 8 , further comprising a selection circuit.
12. The display device according to claim 8 , wherein, in the first transistor, the crystalline oxide semiconductor layer is positioned over the gate.
13. The display device according to claim 8 , wherein the pixel comprises a capacitor electrically connected between the gate of the second transistor and the power supply line.
14. The display device according to claim 8 , wherein a hydrogen concentration of the oxide semiconductor layer is less than or equal to 5×10 19 /cm 3 .
15. A display device comprising:
a display panel comprising:
a pixel portion comprising:
a pixel comprising:
a first transistor comprising:
a gate electrically connected to a scan line; and
a crystalline oxide semiconductor layer comprising indium, gallium, and zinc;
a second transistor comprising a gate electrically connected to a signal line through the first transistor; and
a light-emitting element electrically connected to a power supply line through the second transistor; and
a driver circuit portion comprising:
a gate line driver circuit;
a signal generation circuit configured to generate clock pulse and output the clock pulse to the driver circuit portion; and
a display control circuit configured to switch between supply and stop of the clock pulse to the driver circuit portion,
wherein the clock pulse is to be supplied to the gate line driver circuit,
wherein the crystalline oxide semiconductor layer has a crystallinity of 80% or more, and
wherein a carrier concentration of the crystalline oxide semiconductor layer is less than 1×10 14 /cm 3 .
16. The display device according to claim 15 , further comprising a memory circuit comprising a plurality of memory cells.
17. The display device according to claim 15 , further comprising a comparison circuit.
18. The display device according to claim 15 , further comprising a selection circuit.
19. The display device according to claim 15 , wherein, in the first transistor, the crystalline oxide semiconductor layer is positioned over the gate.
20. The display device according to claim 15 , wherein the driver circuit portion comprises a signal line driver circuit.
21. The display device according to claim 15 , wherein the pixel comprises a capacitor electrically connected between the gate of the second transistor and the power supply line.
22. The display device according to claim 15 , wherein a hydrogen concentration of the oxide semiconductor layer is less than or equal to 5×10 19 /cm 3 .