IP Library › Granted Patent US 12,225,739
Granted Patent B2
US 12,225,739 · App. 18/626,592 · Granted Feb 11, 2025

Semiconductor device

Inventors: Tatsuya Honda (Isehara, JP); Masashi Tsubuku (Atsugi, JP); Yusuke Nonaka (Atsugi, JP); Takashi Shimazu (Machida, JP); Shunpei Yamazaki (Setagaya, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H10D30/6755G02F1/133345G02F1/1337G02F1/13394G02F1/134309H10D30/6757H10D62/405H10D62/80H10D64/68H10D86/423H10D86/60H10D99/00G02F2202/10H01L21/02565H10K59/1213
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Quick Facts
Patent No.
US 12,225,739
App. No.
18/626,592
Granted
Feb 11, 2025
Kind
B2
Abstract

A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

Claims (60)

1. A semiconductor device comprising:

an insulating film;

a gate electrode;

an oxide semiconductor film;

a source electrode; and

a drain electrode,

wherein the oxide semiconductor film comprises an indium oxide film,

wherein the indium oxide film comprises a first region and a second region,

wherein a concentration of silicon in the second region is lower than a concentration of silicon in the first region,

wherein a concentration of carbon in the first region is lower than or equal to 1.0×10 20 atoms/cm 3 , and

wherein the indium oxide film comprises a crystal portion.

2. The semiconductor device according to claim 1 ,

wherein the indium oxide film comprises a channel formation region.

3. The semiconductor device according to claim 1 ,

wherein the semiconductor device further comprises a driver circuit portion and a pixel portion, and

wherein one of the driver circuit portion and the pixel portion comprises the insulating film, the gate electrode, the oxide semiconductor film, the source electrode, and the drain electrode.

4. The semiconductor device according to claim 1 ,

wherein a thickness of the indium oxide film is greater than 5 nm and less than or equal to 200 nm.

5. The semiconductor device according to claim 1 ,

wherein the indium oxide film is provided over a surface with an average surface roughness (R a ) less than or equal to 0.15 nm.

6. The semiconductor device according to claim 1 ,

wherein the concentration of carbon in the first region is lower than or equal to 1.0×10 19 atoms/cm 3 .

7. The semiconductor device according to claim 1 ,

wherein the crystal portion is single crystal.

8. The semiconductor device according to claim 1 ,

wherein the insulating film comprises silicon.

9. The semiconductor device according to claim 1 ,

wherein the insulating film comprises at least one of gallium oxide, aluminum oxide, silicon nitride, silicon oxynitride, aluminum oxynitride, yttrium oxide, lanthanum oxide, and silicon nitride oxide.

10. The semiconductor device according to claim 1 ,

wherein the insulating film comprises at least one of hafnium oxide, hafnium silicate, hafnium silicate to which nitrogen is added, and hafnium aluminate.

11. A semiconductor device comprising:

an insulating film;

a gate electrode;

an oxide semiconductor film;

a source electrode; and

a drain electrode,

wherein the oxide semiconductor film comprises an indium oxide film,

wherein the indium oxide film comprises a first region and a second region,

wherein the first region is provided to be in contact with the insulating film and has a thickness less than or equal to 5 nm,

wherein a concentration of silicon in the second region is lower than a concentration of silicon in the first region,

wherein a concentration of carbon in the first region is lower than or equal to 1.0×10 20 atoms/cm 3 , and

wherein the indium oxide film comprises a crystal portion.

12. The semiconductor device according to claim 11 ,

wherein the indium oxide film comprises a channel formation region.

13. The semiconductor device according to claim 11 ,

wherein the semiconductor device further comprises a driver circuit portion and a pixel portion, and

wherein one of the driver circuit portion and the pixel portion comprises the insulating film, the gate electrode, the oxide semiconductor film, the source electrode, and the drain electrode.

14. The semiconductor device according to claim 11 ,

wherein a thickness of the indium oxide film is greater than 5 nm and less than or equal to 200 nm.

15. The semiconductor device according to claim 11 ,

wherein the indium oxide film is provided over a surface with an average surface roughness (R a ) less than or equal to 0.15 nm.

16. The semiconductor device according to claim 11 ,

wherein the concentration of carbon in the first region is lower than or equal to 1.0×10 19 atoms/cm 3 .

17. The semiconductor device according to claim 11 ,

wherein the crystal portion is single crystal.

18. The semiconductor device according to claim 11 ,

wherein the insulating film comprises silicon.

19. The semiconductor device according to claim 11 ,

wherein the insulating film comprises at least one of gallium oxide, aluminum oxide, silicon nitride, silicon oxynitride, aluminum oxynitride, yttrium oxide, lanthanum oxide, and silicon nitride oxide.

20. The semiconductor device according to claim 11 , wherein the insulating film comprises at least one of hafnium oxide, hafnium silicate, hafnium silicate to which nitrogen is added, and hafnium aluminate.

Priority Claims (1)
JP 2011-215682 · Sep 29, 2011 · national
Continuity (8)
Continuation 18244329 · Sep 11, 2023
Continuation 17229021 · Apr 13, 2021
Continuation 16812919 · Mar 9, 2020
Continuation 16381479 · Apr 11, 2019
Continuation 15422945 · Feb 2, 2017
Continuation 14682356 · Apr 9, 2015
Continuation 13626261 · Sep 25, 2012
Related Publication 20240250183A1 · Jul 25, 2024
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