Organic light-emitting device having a color filter
It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long lifetime using the flexible light-emitting device. A flexible light-emitting device is provided, which includes a substrate having flexibility and a light-transmitting property with respect to visible light; a first adhesive layer over the substrate; an insulating film containing nitrogen and silicon over the first adhesive layer; a light-emitting element including a first electrode, a second electrode facing the first electrode, and an EL layer between the first electrode and the second electrode; a second adhesive layer over the second electrode; and a metal substrate over the second adhesive layer, wherein the thickness of the metal substrate is 10 μm to 200 μm inclusive. Further, an electronic device using the flexible light-emitting device is provided.
1. An active matrix organic light-emitting device, comprising:
a substrate;
a black matrix formed above a part of the substrate;
at least one transistor formed above the substrate;
a barrier film formed above and entirely covering a gate electrode and a semiconductor layer of the at least one transistor;
a planarization film formed above the barrier film;
a color filter formed on an upper part of the planarization film opposite to a position where the at least one transistor is formed; and
an organic light-emitting element formed above the color filter.
2. The active matrix organic light-emitting device of claim 1 , wherein the substrate is formed of plastic.
3. The active matrix organic light-emitting device of claim 1 , wherein each of the transistors includes:
a gate insulating film formed above the semiconductor layer and below the gate electrode.
4. The active matrix organic light-emitting device of claim 3 , wherein each of the transistors includes:
a source electrode formed to be in contact with a source region of the semiconductor layer; and
a drain electrode formed to be in contact with a drain region of the semiconductor layer.
5. The active matrix organic light-emitting device of claim 4 , wherein the source electrode and the drain electrode are formed of a metal material having transmittance and conductivity.
6. The active matrix organic light-emitting device of claim 1 , wherein the organic light-emitting element is a white organic light-emitting element.
7. A semiconductor device comprising:
a substrate;
a transistor over the substrate, the transistor comprising a semiconductor layer and a gate electrode;
a barrier film over the semiconductor layer and the gate electrode;
an interlayer insulating film over the barrier film, the interlayer insulating film comprising an organic insulating material;
a color filter over the interlayer insulating film;
an organic light-emitting element over the interlayer insulating film, the organic light-emitting element electrically connected to the transistor;
an adhesive layer over the organic light-emitting element; and
a metal substrate having a thickness of greater than or equal to 10 μm and less than or equal to 200 μm over the adhesive layer.
8. The semiconductor device according to claim 7 , wherein the thickness of the metal substrate is greater than or equal to 10 μm and less than or equal to 100 μM.
9. The semiconductor device according to claim 7 , further comprising a resin in contact with a side surface of the substrate.
10. A semiconductor device comprising:
a substrate;
a transistor over the substrate the transistor comprising a semiconductor layer and a gate electrode over the semiconductor layer;
a barrier film over the semiconductor layer and the gate electrode;
an interlayer insulating film over the barrier film, the interlayer insulating film comprising an organic insulating material;
a color filter over the interlayer insulating film;
an organic light-emitting element over the interlayer insulating film, the organic light-emitting element electrically connected to the transistor;
an adhesive layer over the organic light-emitting element; and
a metal substrate having a thickness of greater than or equal to 10 μm and less than or equal to 200 μM over the adhesive layer;
wherein the semiconductor device comprises a curved display region, and
wherein an area of the metal substrate is smaller than an area of the substrate, and the metal substrate is placed over the substrate so as not to extend beyond the substrate.
11. The semiconductor device according to claim 10 , wherein the thickness of the metal substrate is greater than or equal to 10 μm and less than or equal to 100 μm.
12. The semiconductor device according to claim 10 , further comprising a resin in contact with a side surface of the substrate.