Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side.
1. An electronic component comprising:
a first silicon substrate including a first face and a second face on a side opposite to the first face;
an integrated circuit formed on the first face, the integrated circuit comprising at least two interconnected semiconductor devices;
an external connection terminal formed on the first face of the silicon substrate;
a first electrode formed on the first face of the silicon substrate and electrically connected to the external connection terminal and to the integrated circuit;
a groove portion that has been etched through the silicon substrate;
a conductive portion in the groove portion, wherein in a plan view from above the first face and facing the first face, the external connection terminal is not above at least a portion of the conductive portion;
an insulating film on the side walls of the groove portion that electrically insulates the conductive portion from the silicon substrate;
a second electrode formed on the first face of the silicon substrate and electrically connected to the conductive portion and to the integrated circuit;
a rear face insulating layer formed on the second face of the silicon substrate;
a rear face electrode formed on the rear face insulating layer and electrically connected to the conductive portion;
a second silicon substrate including a third face;
an electronic element formed on the third face; and
a terminal formed on the third face and electrically connecting the electronic element to the rear face electrode;
wherein the at least two interconnected semiconductor devices are formed on the first face;
wherein the integrated circuit controls the electronic element; and
wherein the external connection terminal, the first electrode, the integrated circuit, the second electrode, the conductive portion and the electronic element are electrically connected in that order.
2. The electronic component according to claim 1 , wherein the third face of the second silicon substrate faces the first silicon substrate.
3. The electronic component according to claim 2 , wherein the electronic element is a surface acoustic wave element.
4. The electronic component according to claim 3 , wherein the surface acoustic wave element is a band filter or a resonator.
5. The electronic component according to claim 2 , wherein the electronic element is a memory element.
6. The electronic component according to claim 2 , wherein the electronic element is an oscillator.
7. The electronic component according to claim 6 , wherein the oscillator is a crystal oscillator, a piezoelectric oscillator or a liquid crystal oscillator.
8. The electronic component according to claim 2 , wherein the electronic element is a piezoelectric device.
9. The electronic component according to claim 1 , wherein the second face of the first silicon substrate faces the second silicon substrate.
10. The electronic component according to claim 9 , wherein the electronic element is a surface acoustic wave element.
11. The electronic component according to claim 10 , wherein the surface acoustic wave element is a band filter or a resonator.
12. The electronic component according to claim 9 , wherein the electronic element is a memory element.
13. The electronic component according to claim 9 , wherein the electronic element is an oscillator.
14. The electronic component according to claim 13 , wherein the oscillator is a crystal oscillator, a piezoelectric oscillator or a liquid crystal oscillator.
15. The electronic component according to claim 9 , wherein the electronic element is a piezoelectric device.
16. The electronic component according to claim 1 , wherein the third face of the second silicon substrate faces the first silicon substrate, and the second face of the first silicon substrate faces the second silicon substrate.
17. The electronic component according to claim 16 , wherein the electronic element is a surface acoustic wave element.
18. The electronic component according to claim 17 , wherein the surface acoustic wave element is a band filter or a resonator.
19. The electronic component according to claim 16 , wherein the electronic element is a memory element.
20. The electronic component according to claim 16 , wherein the electronic element is an oscillator.
21. The electronic component according to claim 20 , wherein the oscillator is a crystal oscillator, a piezoelectric oscillator or a liquid crystal oscillator.
22. The electronic component according to claim 16 , wherein the electronic element is a piezoelectric device.
23. The electronic component according to claim 1 , wherein the electronic element is a surface acoustic wave element.
24. The electronic component according to claim 23 , wherein the surface acoustic wave element is a band filter or a resonator.
25. The electronic component according to claim 1 , wherein the electronic element is a memory element.
26. The electronic component according to claim 1 , wherein the electronic element is an oscillator.
27. The electronic component according to claim 26 , wherein the oscillator is a crystal oscillator, a piezoelectric oscillator or a liquid crystal oscillator.
28. The electronic component according to claim 1 , wherein the electronic element is a piezoelectric device.