Method of marking a semiconductor package
A method of making a semiconductor device can include providing a wafer comprising a plurality of semiconductor die, wherein each semiconductor die comprises an active surface and a backside opposite the active surface. A photosensitive layer can be formed over the wafer and on a backside of each of the plurality of semiconductor die within the wafer with a coating machine. An identifying mark can be formed within the photosensitive layer for each of the plurality of semiconductor die with a digital exposure machine and a developer, wherein a thickness of the identifying mark is less than or equal to 50 percent of a thickness of the photosensitive layer. The photosensitive layer can be cured. The wafer can be singulated into a plurality of semiconductor devices.
1. A method of making a semiconductor device, comprising:
providing a reconstituted wafer comprising a plurality of semiconductor die coupled together with an encapsulant material, the encapsulant material being disposed between and contacting side surfaces of the plurality of semiconductor die, wherein each semiconductor die comprises an active surface and a backside opposite the active surface, the side surfaces extending from the active surface to the backside;
forming a multi-layer material on the reconstituted wafer and over a backside of each of the plurality of semiconductor die within the reconstituted wafer with a coating machine, the multi-layer material comprising a non-photosensitive layer and a photosensitive layer;
forming an identifying mark in the photosensitive layer of the multi-layer material for each of the plurality of semiconductor die while the multi-layer material is on the reconstituted wafer, the identifying mark for each of the semiconductor die being formed by removing a portion of the photosensitive layer with a digital exposure machine and a developer, the identifying mark encoding unique product information comprising an identity of, and a location within, a native semiconductor wafer from which each of the plurality of semiconductor die was taken;
curing the photosensitive layer; and
singulating the reconstituted wafer through the encapsulating material to form a plurality of semiconductor devices, wherein singulating the reconstituted wafer is done after forming the identifying mark for each of the plurality of semiconductor die in the photosensitive layer of the multi-layer material.
2. The method of claim 1 , wherein the photosensitive layer comprises a first color different from a second color of the non-photosensitive layer.
3. The method of claim 1 , wherein forming the identifying mark further comprises forming one or more features comprising text, letters, shapes, symbols, logos, alphanumeric sequences, two-dimensional matrix codes, bar codes, QR codes, IR codes, or pin identifiers and a manufacturing time of the identifying mark is independent of a number of the one or more features in the identifying mark.
4. The method of claim 1 , wherein the coating machine for forming the photosensitive layer over the wafer further comprises at least one of a film laminator, a spin coater, a curtain coater, a spray coater, and a slot die coater.
5. The method of claim 1 , further comprising forming the identifying mark for each of the plurality of semiconductor die with a feature size less than or equal to 150 micrometers in length, width, or both.
6. A method of making a semiconductor device, comprising:
providing a wafer comprising a plurality of semiconductor die, wherein each semiconductor die comprises an active surface and a backside opposite the active surface;
forming a multi-layer material on the wafer and over a backside of each of the plurality of semiconductor die within the wafer with a coating machine, the multi-layer material comprising a non-photosensitive layer and a photosensitive layer;
forming an identifying mark in the photosensitive layer of the multi-layer material for each of the plurality of semiconductor die while the multi-layer material is on the wafer, the identifying mark for each of the semiconductor die being formed by removing a portion of the photosensitive layer with a digital exposure machine and a developer, the identifying mark encoding unique product information;
curing the photosensitive layer; and
singulating the wafer into a plurality of semiconductor devices after forming the identifying mark in the photosensitive layer.
7. The method of claim 6 , wherein the wafer is at least one of a semiconductor wafer, a native semiconductor wafer, a reconstituted wafer, and a reconstituted panel.
8. The method of claim 6 , further comprising forming the photosensitive layer on the backside of each of the plurality of semiconductor die within the wafer.
9. The method of claim 6 , wherein the photosensitive layer comprises a first color different from a second color of the non-photosensitive layer.
10. The method of claim 6 , wherein forming the identifying mark further comprises forming one or more features comprising text, letters, shapes, symbols, logos, alphanumeric sequences, two-dimensional matrix codes, bar codes, QR codes, IR codes, or pin identifiers and a manufacturing time of the identifying mark is independent of a number of the one or more features in the identifying mark.
11. The method of claim 6 , wherein the coating machine for forming the photosensitive layer over the wafer further comprises at least one of a film laminator, a spin coater, a curtain coater, a spray coater, and a slot die coater.
12. The method of claim 6 , further comprising forming the identifying mark for each of the plurality of semiconductor die with a feature size less than or equal to 150 micrometers in length, width, or both.
13. A method of making a semiconductor device, comprising:
providing a wafer comprising a plurality of semiconductor die, wherein each semiconductor die comprises an active surface and a backside opposite the active surface;
forming a multi-layer material comprising a non-photosensitive layer and a photosensitive layer, wherein the photosensitive layer is formed on the wafer and on each of the plurality of semiconductor die; and
forming a unique identifying mark in the photosensitive layer of the multi-layer material with a maskless patterning system for each of the plurality of semiconductor die while the multi-layer material is on the wafer, forming the unique identifying mark for each of the plurality of semiconductor die by removing a portion of the photosensitive layer without laser ablation, the unique identifying mark encoding unique product information.
14. The method of claim 13 , wherein the wafer is at least one of a semiconductor wafer, a native semiconductor wafer, a reconstituted wafer, and a reconstituted panel.
15. The method of claim 13 , further comprising forming the photosensitive layer on the backside of each of the plurality of semiconductor die within the wafer.
16. The method of claim 13 , further comprising forming the unique identifying mark with a thickness less than or equal to 50 percent of a thickness of the photosensitive layer.
17. The method of claim 13 , further comprising forming the unique identifying mark with a feature size less than or equal to 150 micrometers in length, width, or both.