Machine-readable code in integrated circuit
An integrated circuit (IC) includes a plurality of metal layers, and a machine-readable code in a selected metal layer of the plurality of metal layers. A wafer includes a plurality of the ICs. An IC wafer testing system includes a scanner configured to read the machine-readable code in the metal layer of the IC in the wafer, and a tester configured to perform testing on the IC in the wafer based on testing information obtained from storage based on the machine-readable code. A method may include forming the IC including a plurality of metal layers and forming a selected metal layer of the IC including the machine-readable code in metal in the selected metal layer. The method may further include testing the IC. The machine-readable code reduces the complexity and time needed to setup and test an IC in a wafer.
1 . An integrated circuit (IC), comprising:
a plurality of metal layers;
a machine-readable code in a selected metal layer of the plurality of metal layers; and
dummy fill shapes surrounding the machine-readable code.
2 . The IC according to claim 1 , wherein the machine-readable code includes one of a quick response (QR) code, a micro-QR code, a bar code and a data matrix.
3 . The IC according to claim 1 , wherein the machine-readable code includes data to direct an electrical test of the IC by a testing system.
4 . The IC according to claim 1 , wherein the machine-readable code includes data regarding at least one of product information and code identification information.
5 . The IC according to claim 1 , wherein the machine-readable code includes a plurality of machine-readable codes in the selected metal layer.
6 . The IC according to claim 1 , wherein the selected metal layer is within three metal layers of a last metal layer.
7 . The IC according to claim 1 , wherein the selected metal layer is a last metal layer of the IC.
8 . The IC according to claim 1 , wherein the selected metal layer is internal to an external surface of the IC, and the machine-readable code is readable by a scanner through the external surface of the IC.
9 . The IC according to claim 1 , wherein the machine-readable code has a maximum cross-sectional area of 4900 square micrometers.
10 . The IC according to claim 1 , further comprising a plurality of contact pads in the selected metal layer adjacent to the machine-readable code, the plurality of contact pads operatively coupled to at least one test structure.
11 . A wafer comprising a plurality of ICs according to claim 1 .
12 . An integrated circuit (IC) wafer testing system, comprising:
a scanner configured to read a machine-readable code in a metal layer of an integrated circuit in a wafer; and
a tester configured to perform testing on the IC in the wafer based on testing information obtained from storage based on the machine-readable code, wherein the tester automatically aligns the IC for contact of a plurality of contact pads thereon by a test probe.
13 . The IC wafer testing system according to claim 12 , wherein the testing information includes alignment information and product information.
14 . A method, comprising:
forming an integrated circuit (IC) including a plurality of metal layers; and
forming a selected metal layer of the IC including a machine-readable code in metal in the selected metal layer; and
forming dummy fill shapes in the metal layer, wherein the dunny fill shapes surround the machine-readable code.
15 . The method according to claim 14 , further comprising testing the IC using a testing system including:
a scanner configured to read the machine-readable code in the selected metal layer of the IC in a wafer; and
a tester configured to perform testing on the IC in the wafer based on testing information obtained from storage based on the machine-readable code.
16 . The method according to claim 15 , wherein the testing information includes alignment information and product information, and further comprising aligning the tester based on the alignment information.
17 . The method according to claim 15 , wherein the testing includes automatically aligning the IC for contact of a plurality of contact pads thereon by a test probe.
18 . The method according to claim 15 , wherein forming the selected metal layer of the IC including the machine-readable code in metal in the selected metal layer includes forming more than one machine-readable code in the metal in the selected metal layer.
19 . The method according to claim 14 , further comprising forming a plurality of contact pads in the selected metal layer adjacent to the machine-readable code, wherein the plurality of contact pads are configured for operative coupling to at least one test structure.
20 . The method according to claim 14 , wherein the selected metal layer is within three metal layers of a last metal layer.