Resist material and pattern forming method using same
In one embodiment, a resist material to be used in an imprint process includes a diluent monomer having a hydroxyl group and at least one functional group selected from a vinyl ether group, an epoxy group and an oxetanyl group. The material further includes a dendrimer having at least two reactive groups for photo-cationic polymerization. The material further includes a photo-acid generator as a polymerization initiator.
1. A resist material to be used in an imprint process, comprising:
a diluent monomer having a hydroxyl group and at least one functional group selected from a vinyl ether group, an epoxy group and an oxetanyl group;
a dendrimer with a globular structure having at least two reactive groups for photo-cationic polymerization; and
a photo-acid generator as a polymerization initiator.
2. The material of claim 1 , wherein the material comprises:
50% or more and 90% or less by weight of the diluent monomer;
5% or more and 50% or less by weight of the dendrimer; and
0.3% or more and 10% or less by weight of the polymerization initiator.
3. The material of claim 1 , wherein the dendrimer has a vinyl ether group, an epoxy group or an oxetanyl group as the reactive groups for photo-cationic polymerization.
4. The material of claim 1 , wherein the diluent monomer having the hydroxyl group and the vinyl ether group is represented by general formula Ia:
wherein R is a hydrocarbon chain.
5. The material of claim 1 , wherein the diluent monomer having the hydroxyl group and the epoxy group is represented by general formula Ib:
wherein R 1 is a hydrocarbon chain.
6. The material of claim 1 , wherein the diluent monomer having the hydroxyl group and the oxetanyl group is represented by general formula Ic:
wherein each of R 2 and R 3 is a hydrocarbon chain.