Method of semiconductor wafer bonding and system thereof
A method of semiconductor wafer bonding and system thereof are proposed. A first alignment mark of a first semiconductor wafer is aligned with a second alignment mark of a second semiconductor wafer. A partial attachment is performed between the first semiconductor wafer and the second semiconductor wafer. A scanning is performed along a direction substantially parallel to a surface of the first semiconductor wafer. It is determined if a bonding defect of the partially attached first semiconductor wafer and the second semiconductor wafer exists.
1. A method of semiconductor wafer bonding, the method comprising:
aligning a first alignment mark of a first semiconductor wafer with a second alignment mark of a second semiconductor wafer;
performing a partial attachment between the first semiconductor wafer and the second semiconductor wafer by engaging central portions of the first semiconductor wafer and the second semiconductor wafer while separating an edge of the first semiconductor wafer from an edge of the second semiconductor wafer;
performing a scanning on contacted portions of the partially-attached first and second semiconductor wafers along a direction substantially parallel to a surface of the first semiconductor wafer;
determining if a bonding defect of the partially attached first semiconductor wafer and the second semiconductor wafer exists;
detaching the first semiconductor wafer from the second semiconductor wafer in response to the determination that a bonding defect exists; and
fully attaching the first semiconductor wafer with the second semiconductor wafer in response to no bonding defect being found by the scanning.
2. The method of claim 1 , wherein detaching the first semiconductor wafer from the second semiconductor wafer comprises causing the first semiconductor wafer to separate from the second semiconductor wafer with a gaseous flow.
3. The method of claim 1 , wherein the bonding defect includes a bonding void between the first semiconductor wafer and the second semiconductor wafer.
4. The method of claim 3 , further comprising, in response to the determination that a bonding void exists:
unloading the first semiconductor wafer and the second semiconductor wafer from a process chamber in response to the defect as being detected as a void; and
performing a pre-bonding treatment for the first semiconductor wafer and the second semiconductor wafer.
5. The method of claim 1 , wherein the defect includes an alignment error between the first alignment mark and the second alignment mark as being greater than a threshold.
6. The method of claim 5 , wherein the first semiconductor wafer and the second semiconductor wafer are disposed in a process chamber, further comprising, in response to the alignment error being greater than the threshold, re-aligning the first alignment mark and the second alignment mark in the process chamber without unloading the first and second semiconductor wafers.
7. The method of claim 1 , further comprising performing a plasma process on the first semiconductor wafer and the second semiconductor wafer prior to aligning the first alignment mark with the second alignment mark.
8. The method of claim 1 , wherein performing a scanning along a direction substantially parallel to a surface of the first semiconductor wafer comprises enabling a relative movement between a radiation source and the first semiconductor wafer.
9. The method of claim 8 , wherein performing a scanning along a direction substantially parallel to a surface of the first semiconductor wafer further comprises enabling a relative movement of an imaging device along the direction in synchronization with the movement of the radiation source.
10. The method of claim 9 , wherein the imaging device and the radiation source are overlapped with each other during the movement along the direction scanning is performed across an area of the surface of the first semiconductor wafer where no alignment mark is present.
11. A method of semiconductor wafer bonding, the method comprising:
aligning a first alignment mark of a first semiconductor wafer with a second alignment mark of a second semiconductor wafer, the first alignment mark and the second alignment mark being located in a first area;
performing a partial attachment between the first semiconductor wafer and the second semiconductor wafer while keeping edges of the first semiconductor wafer and the second semiconductor wafer spaced apart from each other;
performing a progressive scanning across the first area and a second area of the first semiconductor wafer and the second semiconductor wafer by enabling a horizontal movement of a radiation source across the first semiconductor wafer while the edges of the first semiconductor wafer and the second semiconductor wafer are spaced apart, the second area being separate from the first area, wherein performing a scanning across the first area and a second area of the first semiconductor wafer comprises generating an image of the second area and examining a color distribution of the image; and
determining if a bonding defect is found in the first area and the second area, wherein a bonding void between the first semiconductor wafer and the second semiconductor wafer is determined as being detected based on the color distribution of the image.
12. The method of claim 11 , wherein at least one of the first semiconductor wafer and the second semiconductor wafer is held by a wafer chuck, and an imaging light for the scanning is configured to run through a transparent portion of the wafer chuck.
13. The method of claim 11 , wherein aligning a first alignment mark of a first semiconductor wafer with a second alignment mark of a second semiconductor wafer comprises locating the first alignment mark and the second alignment mark by a light source movable along a direction substantially parallel to a surface of the first semiconductor wafer.
14. A method of semiconductor wafer bonding, comprising:
holding a semiconductor wafer and a second semiconductor wafer with a first chuck and a second chuck, respectively;
aligning a first alignment mark of the first semiconductor wafer with a second alignment mark of the second semiconductor wafer;
warping the first semiconductor wafer toward the second semiconductor wafer by causing a first central area of the first semiconductor wafer and a second central area of the second semiconductor wafers to be separated from the first chuck and the second chuck, respectively, and engaging the first central area to the second central area;
performing a scanning along a direction substantially parallel to a surface of the first semiconductor wafer while the first semiconductor is warped; and
fully attaching the first semiconductor wafer with the second semiconductor wafer in response to no bonding defect being found by the scanning.
15. The method according to claim 14 , wherein the performing a scanning along a direction substantially parallel to a surface of the semiconductor wafer comprises emitting a radiation source toward the first semiconductor wafer and the second semiconductor wafer across a surface of the first semiconductor wafer.
16. The method according to claim 15 , wherein emitting a radiation source toward the first semiconductor wafer and the second semiconductor wafer comprises emitting the radiation source through a first transparent portion of the first chuck and a second transparent portion of the second chuck, the first transparent portion being overlapped with the second transparent portion from a top-view perspective.
17. The method according to claim 14 , further comprising taking vertical displacement measurements of the first chuck and the second chuck through a level gauge.