Methods of forming a semiconductor device comprising first and second nitride layers
A semiconductor device includes a first well and a second well provided within a semiconductor substrate, an isolation region disposed between the first well and the second well within the semiconductor substrate, a first wiring disposed on the first well, a second wiring disposed on the second well, a concave third wiring disposed on the isolation region, a buried insulating film disposed on the third wiring so as to fill the concave portion thereof, a plurality of fourth wirings disposed on the buried insulating film, and a contact plug disposed so as to electrically connect to at least one of the first and second wells.
1. A semiconductor device comprising:
a first well within semiconductor material;
a second well within the semiconductor material;
a dielectric isolation region within the semiconductor material between the first and second well;
a wiring above and physically contacting the isolation region, the wiring including a seam above the isolation region;
an insulating film over the wiring filling the seam of the wiring; and
another insulating film between the wiring and the insulating film.
2. A semiconductor device comprising:
a first well within semiconductor material;
a second well within the semiconductor material;
a dielectric isolation region within the semiconductor material between the first and second well;
a wiring above and physically contacting the isolation region, the wiring including a seam above the isolation region;
an insulating film over the wiring filling the seam of the wiring; and
an insulative film on the insulating film.
3. A semiconductor device comprising:
a first well within semiconductor material;
a second well within the semiconductor material;
a dielectric isolation region within the semiconductor material between the first and second well;
a wiring above and physically contacting the isolation region, the wiring including a seam above the isolation region;
an insulating film over the wiring filling the seam of the wiring;
a first transistor including a first wiring structure, the first wiring structure including a first gate insulating film between conductive material of the first wiring structure and the first well, a first source and drain disposed on both sides of the first wiring structure within the first well; and
a second transistor including a second wiring structure, the second wiring structure including a second gate insulating film between conductive material of the second wiring structure and the second well, a second source and drain disposed on both sides of the second wiring structure within the second well,
wherein the first wiring structure comprises a first gate electrode of the first transistor,
the second wiring structure comprises a second gate electrode of the second transistor,
the contact plug is electrically connected to at least one of the first source and drain and the second source and drain; and
the isolation region comprises dielectric material.
4. The semiconductor device of claim 3 , wherein the first transistor is an N-channel transistor, and the second transistor is a P-channel transistor.
5. A semiconductor device comprising:
a first well within semiconductor material;
a second well within the semiconductor material;
a dielectric isolation region within the semiconductor material between the first and second well;
a wiring above and physically contacting the isolation region, the wiring including a seam above the isolation region;
an insulating film over the wiring filling the seam of the wiring; and
the wiring comprises a bit line of memory circuitry.
6. A semiconductor device comprising:
a first well within semiconductor material;
a second well within the semiconductor material;
a dielectric isolation region within the semiconductor material between the first and second well;
a wiring including a seam over the isolation region;
an insulating film over the wiring filling the seam of the wiring; and
another insulating film between the wiring and the insulating film, the another insulating film being in the seam; and
the wiring comprises a bit line of memory circuitry.
7. A semiconductor device comprising:
a first well within semiconductor material;
a second well within the semiconductor material;
a dielectric isolation region within the semiconductor material between the first and second well;
a wiring including a seam over the isolation region;
an insulating film over the wiring filling the seam of the wiring; and
another insulating film between the wiring and the insulating film, the another insulating film being in the seam;
an insulative film on the another insulating film; and
the wiring comprises a bit line of memory circuitry.
8. A semiconductor device comprising:
a first well within semiconductor material;
a second well within the semiconductor material;
a dielectric isolation region within the semiconductor material between the first and second well;
a wiring including a seam over the isolation region;
an insulating film over the wiring filling the seam of the wiring; and
another insulating film between the wiring and the insulating film, the another insulating film being in the seam;
an insulative film on the another insulating film;
the insulative film is not in the seam; and
the wiring comprises a bit line of memory circuitry.