Display device
To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.
1. A display device comprising:
a pixel portion comprising:
a transistor comprising an oxide semiconductor layer;
a first inorganic insulating film over the transistor;
an organic insulating film over the first inorganic insulating film;
a first transparent conductive layer over the organic insulating film;
a second inorganic insulating film over the first transparent conductive layer; and
a second transparent conductive layer over the second inorganic insulating film,
wherein the second transparent conductive layer is electrically connected to one of a source electrode layer and a drain electrode layer of the transistor in a first opening of the first inorganic insulating film and in a second opening of the organic insulating film,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc,
wherein an edge portion of the second inorganic insulating film overlaps with the organic insulating film in the pixel portion,
wherein the second transparent conductive layer is in contact with a top surface of a first region of the first inorganic insulating film in the second opening, and
wherein the organic insulating film comprises a second region that does not overlap with the second inorganic insulating film and the second transparent conductive layer.
2. The display device according to claim 1 , wherein the second inorganic insulating film and the oxide semiconductor layer do not overlap with each other.
3. The display device according to claim 1 , wherein edge portions of the oxide semiconductor layer are in contact with the source and drain electrode layers.
4. The display device according to claim 1 , wherein the first inorganic insulating film has a stacked-layer structure.
5. The display device according to claim 1 , wherein the second inorganic insulating film comprises silicon and nitrogen.
6. The display device according to claim 1 , wherein the organic insulating film comprises an organic resin.
7. A display device comprising:
a pixel portion comprising:
a gate electrode;
an oxide semiconductor layer overlapping with the gate electrode with a gate insulating layer interposed therebetween;
a source electrode electrically connected to the oxide semiconductor layer;
a drain electrode electrically connected to the oxide semiconductor layer;
a first inorganic insulating film over the source electrode and the drain electrode;
an organic insulating film over the first inorganic insulating film;
a first transparent conductive layer over the organic insulating film;
a second inorganic insulating film over the first transparent conductive layer;
a second transparent conductive layer over the second inorganic insulating film; and
a liquid crystal layer over the second transparent conductive layer,
wherein the second transparent conductive layer is electrically connected to one of the source electrode and the drain electrode in a first opening of the first inorganic insulating film and in a second opening of the organic insulating film,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc,
wherein an edge portion of the second inorganic insulating film overlaps with the organic insulating film in the pixel portion,
wherein the second transparent conductive layer is in contact with a top surface of a first region of the first inorganic insulating film in the second opening, and
wherein the organic insulating film comprises a second region that does not overlap with the second inorganic insulating film and the second transparent conductive layer.
8. The display device according to claim 7 , wherein the gate electrode is located under the oxide semiconductor layer.
9. The display device according to claim 7 , wherein the second inorganic insulating film and the oxide semiconductor layer do not overlap with each other.
10. The display device according to claim 7 , wherein edge portions of the oxide semiconductor layer are in contact with the source and drain electrode layers.
11. The display device according to claim 7 , wherein the first inorganic insulating film has a stacked-layer structure.
12. The display device according to claim 7 , wherein the second inorganic insulating film comprises silicon and nitrogen.
13. The display device according to claim 7 , wherein the organic insulating film comprises an organic resin.
14. A display device comprising:
a pixel portion comprising:
a gate electrode;
an oxide semiconductor layer overlapping with the gate electrode with a gate insulating layer interposed therebetween;
a source electrode electrically connected to the oxide semiconductor layer;
a drain electrode electrically connected to the oxide semiconductor layer;
a first inorganic insulating film over the source electrode and the drain electrode;
an organic insulating film over the first inorganic insulating film;
a first transparent conductive layer over the organic insulating film;
a second inorganic insulating film over the first transparent conductive layer;
a second transparent conductive layer over the second inorganic insulating film; and
a liquid crystal layer over the second transparent conductive layer,
wherein the second transparent conductive layer is electrically connected to one of the source electrode and the drain electrode in a first opening of the first inorganic insulating film and in a second opening of the organic insulating film,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc,
wherein an edge portion of the second inorganic insulating film overlaps with the organic insulating film in the pixel portion,
wherein the second transparent conductive layer is in contact with a top surface of a first region of the first inorganic insulating film in the second opening,
wherein the organic insulating film comprises a second region that does not overlap with the second inorganic insulating film and the second transparent conductive layer, and
wherein the second transparent conductive layer overlaps with the first transparent conductive layer with the second inorganic insulating film interposed therebetween.
15. The display device according to claim 14 , wherein the gate electrode is located under the oxide semiconductor layer.
16. The display device according to claim 14 , wherein the second inorganic insulating film and the oxide semiconductor layer do not overlap with each other.
17. The display device according to claim 14 , wherein edge portions of the oxide semiconductor layer are in contact with the source and drain electrode layers.
18. The display device according to claim 14 , wherein the first inorganic insulating film has a stacked-layer structure.
19. The display device according to claim 14 , wherein the second inorganic insulating film comprises silicon and nitrogen.
20. The display device according to claim 14 , wherein the organic insulating film comprises an organic resin.